GS1A GS1B GS1D GS1G GS1J GS1K GS1M
100050 100 200 400 600 800
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
75
30
30
1.0
1.1
5.0
15
GS1A ...... GS1M
表
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面安装普通整流二极管
反向电压 50 ---1000 V
正向电流 1.0 A
SIYU R
V
µA
pF
IR
Cj
最大正向电压 IF = 1.0A
最大反向电流 TA= 25℃
典型结电容 VR = 4.0V, f = 1MHz
电特性 TA = 25℃ 除非另有规定。
Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
单位
Unit
符号
Symbols
Maximum forward voltage
Maximum reverse current
Type junction capacitance
VF
-50 --- +150
V
V
V
A
A
µA
℃/W
℃
VRRM
VRMS
VDC
IF(AV)
IFSM
IR(AV)
特征 Features
·低的反向漏电流 Low reverse leakage
·较强的正向浪涌承受能力 High forward surge capability
·高温焊接保证 High temperature soldering guaranteed:
250℃/10 秒 seconds at terminals
机械数据 Mechanical Data
·端子: 焊料被镀 Terminals: Solder plated
·极性: 色环端为负极 Polarity: Color band denotes cathode end
·安装位置: 任意 Mounting Position: Any
极限值和温度特性 TA = 25℃ 除非另有规定。
Maximum Ratings & Thermal Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
最大反向峰值电流
Maximum peak reverse current full cycle
典型热阻 Typical thermal resistance
工作结温和存储温度
符号
Symbols
单位
Unit
Surface Mount General Rectifier
Reverse Voltage 50 to 1000 V
Forward Current 1.0 A
Operating junction and storage temperature range
Tj, TSTG
@TA = 75℃
RθJA
GS1A GS1B GS1D GS1G GS1J GS1K GS1M
·封装: 塑料封装 Case: Molded plastic body
SMA DO-214AC
.110(2.79)
.086(2.18)
.067(1.70)
.051(1.29)
.180(4.57)
.160(4.06) .012(0.305)
.006(0.152)
.209(5.31)
.185(4.70)
.059(1.50)
.035(0.89)
Unit:inch(mm)
.091(2.31)
.067(1.70)
.008(0.203)
.004(0.102)
- 65 - 大昌电子 DACHANG ELECTRONICS
Tel:0513-87201088 www.dachang.com.cn
SIYU R
特性曲线 Characteristic Curves
反
向
电
流
I
R (
mA
)
TYPICAL REVERSE CHARACTERISTICS
I R
In
st
an
ta
ne
ou
s
R
ev
er
se
C
ur
re
nt
(m
A
)
反向特性曲线(典型值)
反向电压 VR(V)
TYPICAL JUNCTION CAPACITANCE
典型结电容
典
型
结
电
容
C J
(P
F)
VR Reverse Voltage (V)
C
J
J
un
gt
io
n
C
ap
ac
ta
nc
e(
P F
)
脉冲宽度
典
型
热
阻
R
θJ
A
(
℃
/W
)
TYPICAL TRANSIENT THERMAL IMPEDANCE
t, Pulse Duration, sec
R
θJ
A
T
ra
ns
ie
nt
T
he
rm
al
Im
pe
da
nc
e
(℃
/W
)
典型热阻
GS1A ...... GS1M
峰值反向电压百分比(%)
Percent Of Peak Reverse Voltage,%
平
均
功
率
损
耗
I
F(
AV
) (
A)
FORWARD CURRENT DERATING CURVE
I F(
AV
)
Av
er
ag
e
Po
w
er
D
is
si
pa
tio
n(
w
at
ts
)
正向电流降额曲线
环境温度 Ta(°C)
Tamb, ambient temperature (°C)
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
Single Phase
Half Wave 60HZ
Resistive or
inductive Load
通过电流的周期
峰
值
正
向
浪
涌
电
流
I
FS
M(A
)
浪涌特性曲线(最大值)
MAXIMUM NON REPETITIVE
PEAK FORWARD SURGE CURRENT
Number of Cycles at 60 Hz.
I FS
M
P
ea
k
Fo
rw
ar
d
Su
rg
e
C
ur
re
nt
(A
)
1 10 100
5.0
10
15
20
25
30
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method
正
向
电
流
I F(
A)
正向特性曲线(典型值)
正向电压 VF(V)
TYPICAL FORWARD CHARACTERISTIC
I F
In
st
an
ta
ne
ou
s
Fo
rw
ar
d
C
ur
re
nt
(A
)
VF Instantaneous Forward Voltage (V)
ELCYCYTUD%1
sm003=HTDIWESLUP
C°52=jT
6.0 8.0 0.1 2.1 4.1 5.1
10.
1.0
01
02
0
TJ=150°C
TJ=100°C
TJ=25°C
0.01
0.1
1
10
100
1000
0 20 40 60 80 100
TJ=25°C
1
10
100
200
0.1 1.0 10 100 0.01 0.1 1 10 100
0.1
1
10
100
大昌电子 DACHANG ELECTRONICS - 66 -