CD4093

TL/F/5982 C D 4 0 9 3 B M / C D 4 0 9 3 B C Q u a d 2 -In p u t N A N D S c h m itt T rig g e r February 1993 CD4093BM/CD4093BC Quad 2-Input NAND Schmitt Trigger General Description The CD4093B consists of four Schmitt-trigger circuits. Each circuit functions as a 2-input NAND gate with Schmitt-trigger action on both inputs. The gate switches at different points for positive and negative-going signals. The difference be- tween the positive (VT a) and the negative voltage (VT b) is defined as hysteresis voltage (VH). All outputs have equal source and sink currents and con- form to standard B-series output drive (see Static Electrical Characteristics). Features Y Wide supply voltage range 3.0V to 15V Y Schmitt-trigger on each input with no external components Y Noise immunity greater than 50% Y Equal source and sink currents Y No limit on input rise and fall time Y Standard B-series output drive Y Hysteresis voltage (any input) TA e 25§C Typical VDD e 5.0V VH e 1.5V VDD e 10V VH e 2.2V VDD e 15V VH e 2.7V Guaranteed VH e 0.1 VDD Applications Y Wave and pulse shapers Y High-noise-environment systems Y Monostable multivibrators Y Astable multivibrators Y NAND logic Connection Diagram Dual-In-Line Package TL/F/5982–1 Top View Order Number CD4093B C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A. Absolute Maximum Ratings (Notes 1 & 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. DC Supply Voltage (VDD) b0.5 to a18 VDC Input Voltage (VIN) b0.5 to VDD a0.5 VDC Storage Temperature Range (TS) b65§C to a150§C Power Dissipation (PD) Dual-In-Line 700 mW Small Outline 500 mW Lead Temperature (TL) (Soldering, 10 seconds) 260§C Recommended Operating Conditions (Note 2) DC Supply Voltage (VDD) 3 to 15 VDC Input Voltage (VIN) 0 to VDD VDC Operating Temperature Range (TA) CD4093BM b55§C to a125§C CD4093BC b40§C to a85§C DC Electrical Characteristics CD4093BM (Note 2) Symbol Parameter Conditions b55§C a25§C a125§C Units Min Max Min Typ Max Min Max IDD Quiescent Device VDD e 5V 0.25 0.25 7.5 mA Current VDD e 10V 0.5 0.5 15.0 mA VDD e 15V 1.0 1.0 30.0 mA VOL Low Level VIN e VDD, lIOl k 1 mA Output Voltage VDD e 5V 0.05 0 0.05 0.05 V VDD e 10V 0.05 0 0.05 0.05 V VDD e 15V 0.05 0 0.05 0.05 V VOH High Level VIN e VSS, lIOl k 1 mA Output Voltage VDD e 5V 4.95 4.95 5 4.95 V VDD e 10V 9.95 9.95 10 9.95 V VDD e 15V 14.95 14.95 15 14.95 V VT b Negative-Going Threshold lIOl k 1 mA Voltage (Any Input) VDD e 5V, VO e 4.5V 1.3 2.25 1.5 1.8 2.25 1.5 2.3 V VDD e 10V, VO e 9V 2.85 4.5 3.0 4.1 4.5 3.0 4.65 V VDD e 15V, VO e 13.5V 4.35 6.75 4.5 6.3 6.75 4.5 6.9 V VT a Positive-Going Threshold lIOl k 1 mA Voltage (Any Input) VDD e 5V, VO e 0.5V 2.75 3.65 2.75 3.3 3.5 2.65 3.5 V VDD e 10V, VO e 1V 5.5 7.15 5.5 6.2 7.0 5.35 7.0 V VDD e 15V, VO e 1.5V 8.25 10.65 8.25 9.0 10.5 8.1 10.5 V VH Hysteresis (VT a b VTb) VDD e 5V 0.5 2.35 0.5 1.5 2.0 0.35 2.0 V (Any Input) VDD e 10V 1.0 4.30 1.0 2.2 4.0 0.70 4.0 V VDD e 15V 1.5 6.30 1.5 2.7 6.0 1.20 6.0 V IOL Low Level Output VIN e VDD Current (Note 3) VDD e 5V, VO e 0.4V 0.64 0.51 0.88 0.36 mA VDD e 10V, VO e 0.5V 1.6 1.3 2.25 0.9 mA VDD e 15V, VO e 1.5V 4.2 3.4 8.8 2.4 mA IOH High Level Output VIN e VSS Current (Note 3) VDD e 5V, VO e 4.6V b0.64 0.51 b0.88 b0.36 mA VDD e 10V, VO e 9.5V b1.6 b1.3 b2.25 b0.9 mA VDD e 15V, VO e 13.5V b4.2 b3.4 b8.8 b2.4 mA IIN Input Current VDD e 15V, VIN e 0V b0.1 b10b5 b0.1 b1.0 mA VDD e 15V, VIN e 15V 0.1 10b5 0.1 1.0 mA Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed; they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Recommended Operating Conditions’’ and ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: VSS e 0V unless otherwise specified. Note 3: IOH and IOL are tested one output at a time. 2 DC Electrical Characteristics CD4093BC (Note 2) Symbol Parameter Conditions b40§C a25§C a85§C Units Min Max Min Typ Max Min Max IDD Quiescent Device VDD e 5V 1.0 1.0 7.5 mA Current VDD e 10V 2.0 2.0 15.0 mA VDD e 15V 4.0 4.0 30.0 mA VOL Low Level VIN e VDD, lIOl k 1 mA Output Voltage VDD e 5V 0.05 0 0.05 0.05 V VDD e 10V 0.05 0 0.05 0.05 V VDD e 15V 0.05 0 0.05 0.05 V VOH High Level VIN e VSS, lIOl k 1 mA Output Voltage VDD e 5V 4.95 4.95 5 4.95 V VDD e 10V 9.95 9.95 10 9.95 V VDD e 15V 14.95 14.95 15 14.95 V VT b Negative-Going Threshold lIOl k 1 mA Voltage (Any Input) VDD e 5V, VO e 4.5V 1.3 2.25 1.5 1.8 2.25 1.5 2.3 V VDD e 10V, VO e 9V 2.85 4.5 3.0 4.1 4.5 3.0 4.65 V VDD e 15V, VO e 13.5V 4.35 6.75 4.5 6.3 6.75 4.5 6.9 V VT a Positive-Going Threshold lIOl k 1 mA Voltage (Any Input) VDD e 5V, VO e 0.5V 2.75 3.6 2.75 3.3 3.5 2.65 3.5 V VDD e 10V, VO e 1V 5.5 7.15 5.5 6.2 7.0 5.35 7.0 V VDD e 15V, VO e 1.5V 8.25 10.65 8.25 9.0 10.5 8.1 10.5 V VH Hysteresis (VT a b VTb) VDD e 5V 0.5 2.35 0.5 1.5 2.0 0.35 2.0 V (Any Input) VDD e 10V 1.0 4.3 1.0 2.2 4.0 0.70 4.0 V VDD e 15V 1.5 6.3 1.5 2.7 6.0 1.20 6.0 V IOL Low Level Output VIN e VDD Current (Note 3) VDD e 5V, VO e 0.4V 0.52 0.44 0.88 0.36 mA VDD e 10V, VO e 0.5V 1.3 1.1 2.25 0.9 mA VDD e 15V, VO e 1.5V 3.6 3.0 8.8 2.4 mA IOH High Level Output VIN e VSS Current (Note 3) VDD e 5V, VO e 4.6V b0.52 0.44 b0.88 b0.36 mA VDD e 10V, VO e 9.5V b1.3 b1.1 b2.25 b0.9 mA VDD e 15V, VO e 13.5V b3.6 b3.0 b8.8 b2.4 mA IIN Input Current VDD e 15V, VIN e 0V b0.3 b10b5 b0.3 b1.0 mA VDD e 15V, VIN e 15V 0.3 10b5 0.3 1.0 mA AC Electrical Characteristics* TA e 25§C, CL e 50 pF, RL e 200k, Input tr, tf e 20 ns, unless otherwise specified Symbol Parameter Conditions Min Typ Max Units tPHL, tPLH Propagation Delay Time VDD e 5V 300 450 ns VDD e 10V 120 210 ns VDD e 15V 80 160 ns tTHL, tTLH Transition Time VDD e 5V 90 145 ns VDD e 10V 50 75 ns VDD e 15V 40 60 ns CIN Input Capacitance (Any Input) 5.0 7.5 pF CPD Power Dissipation Capacitance (Per Gate) 24 pF *AC Parameters are guaranteed by DC correlated testing. Note 2: VSS e 0V unless otherwise specified. Note 3: IOH and IOL are tested one output at a time. 3 Typical Applications Gated Oscillator TL/F/5982–2 Assume t1 a t2 ll tPHL a tPLH then: t0 e RC fin [VDD/VTb] t1 e RC fin [(VDD b VTb)/(VDD b VTa)] t2 e RC fin [VTa/VTb] f e 1 t1 a t2 e 1 RC fin (VT a) (VDD b VTb) (VT b)(VDD b VTa) TL/F/5982–3 Gated One-Shot TL/F/5982–4 TL/F/5982–5 (a) Negative-Edge Triggered TL/F/5982–6 TL/F/5982–7 (b) Positive-Edge Triggered 4 Typical Performance Characteristics Typical Transfer Characteristics TL/F/5982–8 Guaranteed Hysteresis vs VDD TL/F/5982–9 Guaranteed Trigger Threshold Voltage vs VDD TL/F/5982–10 Guaranteed Hysteresis vs VDD TL/F/5982–11 Input and Output Characteristics TL/F/5982–12 Output Characteristic Input Characteristic TL/F/5982–13 VNML e VIH(MIN) b VOL j VIH(MIN) e VTa(MIN) VNMH e VOH b VIL(MAX) j VDD b VIL(MAX) e VDD b VTb(MAX) AC Test Circuits and Switching Time Waveforms TL/F/5982–14 TL/F/5982–15 5 C D 4 0 9 3 B M / C D 4 0 9 3 B C Q u a d 2 -I n p u t N A N D S c h m it t T ri g g e r Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number CD4093BMJ or CD4093BCJ NS Package Number J14A Molded Dual-In-Line Package (N) Order Number CD4093BM or CD4093BCN NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd. 1111 West Bardin Road Fax: (a49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309 Arlington, TX 76017 Email: cnjwge@ tevm2.nsc.com Ocean Centre, 5 Canton Rd. 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