AO4407A原理图_AO4407A技术参数_AOS万代mos管

AO4407A30VP-ChannelMOSFETProductSummaryVDS=-30VID=-12A(VGS=-20V)RDS(ON)<11mΩ(VGS=-20V)RDS(ON)<13mΩ(VGS=-10V)RDS(ON)<17mΩ(VGS=-6V)100%UISTested100%RgTestedGeneralDescriptionTheAO4407AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatechargewitha25Vgaterating.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.*RoHSandHalogen-FreeComplaintSOIC-8TopViewBottomViewDDDDSSGGDSSymbolVDSVGSIDMIAREARTJ,TSTGParameterSymbolTypMaxt≤10s3240SteadyState6075SteadyStateRθJL1724Maximum-12-103.1±25-60-26101AmJVV2.0°C-55to150WMaximumJunction-to-LeadC°C/WThermalCharacteristicsUnitsMaximumJunction-to-AmbientA°C/WMaximumJunction-to-AmbientA°C/WRθJADrain-SourceVoltagePulsedDrainCurrentB-30AbsoluteMaximumRatingsTA=25°CunlessotherwisenotedContinuousDrainCurrentAUnitsParameterTA=25°CTA=70°CJunctionandStorageTemperatureRangeTA=70°CIDGate-SourceVoltagePDAvalancheCurrentGRepetitiveavalancheenergyL=0.3mHGPowerDissipationATA=25°CSRev.11.0June2021www.tdldz.com深圳市泰德兰电子有限公司AOS万代--mos管代理SymbolMinTypMaxUnitsBVDSS-30V-1TJ=55°C-5IGSS±100nAVGS(th)-1.7-2.3-3VID(ON)-60A8.511TJ=125°C11.515101312.717gFS21SVSD-0.7-1VIS-3ACiss20602600pFCoss370pFCrss295pFRg2.43.6ΩQg3039nCQ4.6nCVGS=0V,VDS=-15V,f=1MHzInputCapacitanceOutputCapacitancemΩSWITCHINGPARAMETERSGateSourceChargeTotalGateChargeV=-10V,V=-15V,I=-12ADYNAMICPARAMETERSMaximumBody-DiodeContinuousCurrentGateresistanceVGS=0V,VDS=0V,f=1MHzRDS(ON)StaticDrain-SourceOn-ResistanceForwardTransconductanceDiodeForwardVoltageVGS=-6V,ID=-10AIS=-1A,VGS=0VVDS=-5V,ID=-10AVGS=-10V,ID=-12AGateThresholdVoltageVDS=VGSID=-250µAVDS=-30V,VGS=0VVDS=0V,VGS=±25VZeroGateVoltageDrainCurrentGate-BodyleakagecurrentElectricalCharacteristics(TJ=25°Cunlessotherwisenoted)STATICPARAMETERSParameterConditionsIDSSµADrain-SourceBreakdownVoltageOnstatedraincurrentID=-250µA,VGS=0VVGS=-10V,VDS=-5VVGS=-20V,ID=-12AReverseTransferCapacitanceRev.11.0June2013www.aosmd.comgsQgd10nCtD(on)11nstr9.4nstD(off)24nstf12nstrr3040nsQrr22nCTHISPRODUCTHASBEENDESIGNEDANDQUALIFIEDFORTHECONSUMERMARKET.APPLICATIONSORUSESASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSARENOTAUTHORIZED.AOSDOESNOTASSUMEANYLIABILITYARISINGOUTOFSUCHAPPLICATIONSORUSESOFITSPRODUCTS.AOSRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE.Turn-OffDelayTimeVGS=-10V,VDS=-15V,RL=1.25Ω,RGEN=3ΩTurn-OffFallTimeTurn-OnDelayTimeTurn-OnRiseTimeGateDrainChargeGSDSDBodyDiodeReverseRecoveryTimeBodyDiodeReverseRecoveryChargeIF=-12A,dI/dt=100A/µsIF=-12A,dI/dt=100A/µsA:ThevalueofRθJAismeasuredwiththedevicemountedon1in2FR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.Thevalueinanygivenapplicationdependsontheuser'sspecificboarddesign.Thecurrentratingisbasedonthet≤10sthermalresistancerating.B:Repetitiverating,pulsewidthlimitedbyjunctiontemperature.C.TheRθJAisthesumofthethermalimpedencefromjunctiontoleadRθJLandleadtoambient.D.ThestaticcharacteristicsinFigures1to6areobtainedusing<300µspulses,dutycycle0.5%max.E.Thesetestsareperformedwiththedevicemountedon1in2FR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.TheSOAcurveprovidesasinglepulserating.F.Thecurrentratingisbasedonthet≤10sthermalresistancerating.G.EARandIARratingsarebasedonlowfrequencyanddutycyclestokeepTj=25C.TYPICALELECTRICALANDTHERMALCHARACTERISTICS020406080012345-ID(A)-VDS(Volts)Figure1:On-RegionCharacteristics-5V-6V-10V-4.5V-4V02040608000.511.522.533.544.55-ID(A)-VGS(Volts)Figure2:TransferCharacteristics25°C125°CVDS=-5V05101520RDS(ON)(mΩΩΩΩ)VGS=-10VVGS=-6VVGS=-20V0.81.01.21.41.61.8NormalizedOn-ResistanceVGS=-3.5VVGS=-20VID=-12AVGS=-10VID=-12AVGS=-6VID=-10ARev.11.0June2013www.aosmd.comIF=-6.5A,dI/dt=100A/µs048121620-ID(A)Figure3:On-Resistancevs.DrainCurrentandGateVoltage1E-061E-051E-041E-031E-021E-011E+001E+010.00.20.40.60.81.01.2-IS(A)-VSD(Volts)Figure6:Body-DiodeCharacteristics25°C125°C0255075100125150175NormalizedOnTemperature(°C)Figure4:On-Resistancevs.JunctionTemperature51015202530345678910RDS(ON)(mΩΩΩΩ)-VGS(Volts)Figure5:On-Resistancevs.Gate-SourceVoltageID=-12A25°125°TYPICALELECTRICALANDTHERMALCHARACTERISTICS0246810051015202530-VGS(Volts)Qg(nC)Figure7:Gate-ChargeCharacteristics050010001500200025003000051015202530Capacitance(pF)-VDS(Volts)Figure8:CapacitanceCharacteristicsCissCossCrss110100100010000Power(W)0.010.1110100-ID(Amps)100µs10ms1ms100mss10sDCRDS(ON)limitedTJ(Max)=150°CTA=25°C10µsVDS=-15VID=-12ATJ(Max)=150°CTA=25°CRev.11.0June2013www.aosmd.com0.000010.0010.1101000PulseWidth(s)Figure10:SinglePulsePowerRatingJunction-to-Ambient(NoteE)0.0010.010.11100.000010.00010.0010.010.11101001000ZθθθθJANormalizedTransientThermalResistancePulseWidth(s)Figure11:NormalizedMaximumTransientThermalImpedance(NoteE)0.1110100-VDS(Volts)Figure9:MaximumForwardBiasedSafeOperatingArea(NoteE)SinglePulseD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=75°C/WTonTPDIndescendingorderD=0.5,0.3,0.1,0.05,0.02,0.01,singlepulseVDCIgVdsDUTVDCVgsVgsQgQgsQgdChargeGateChargeTestCircuit&Waveform-+-+-10VUnclampedInductiveSwitching(UIS)TestCircuit&WaveformsL2E=1/2LIARARVDCDUTVddVgsVdsVgsRLRgResistiveSwitchingTestCircuit&Waveforms-+VgsVdstttttt90%10%rond(off)foffd(on)Rev.11.0June2013www.aosmd.comVddVgsIdVgsRgDUTVDCVgsVdsIdVgsVds-+BVDSSIARIgVgs-+VDCDUTLVgsIsdDiodeRecoveryTestCircuit&WaveformsVds-Vds+dI/dtRMrrVddVddQ=-Idttrr-Isd-VdsF-I-IUNIT:mmRECOMMENDEDLANDPATTERN0.0100.0040.2280°0.0160.1500.1890.0070.0120.0498°0.1930.2360.050BSC0.1540.1970.2440.0500.1570.0200.0100.065DIMENSIONSININCHES0.053MINNOMMAX0.0690.0200.0100.0650.0591.501.6581h0.250.50SEATINGPLANEGAUGEPLANEqNOTE1.ALLDIMENSIONSAREINMILLMETERS.2.DIMENSIONSAREINCLUSIVEOFPLATING.3.PACKAGEBODYSIZESEXCLUDEMOLDFLASHANDGATEBURRS.MOLDFLASHATTHENON-LEADSIDESSHOULDBELESSTHAN6MILSEACH.4.DIMENSIONLISMEASUREDINGAUGEPLANE.5.CONTROLLINGDIMENSIONISMILLIMETER.CONVERTEDINCHDIMENSIONSARENOTNECESSARILYEXACT.1.75MAXNOMASYMBOLSMIN1.35DIMENSIONSINMILLIMETERS1.650.250.514.001.276.205.003.901.27BSC6.004.908°A2cbEeLE1Dq1.250.310.174.803.800.400°5.80A10.100.250.300.694°4°0.200.410.150.0060.0160.0080.0120.027AOSSemiconductorProductReliabilityReportAO4407A,revAPlasticEncapsulatedDeviceALPHA&OMEGASemiconductor,Incwww.aosmd.comThisAOSproductreliabilityreportsummarizesthequalificationresultforAO4407A.Acceleratedenvironmentaltestsareperformedonaspecificsamplesize,andthenfollowedbyelectricaltestatendpoint.ReviewoffinalelectricaltestresultconfirmsthatAO4407ApassesAOSqualityandreliabilityrequirements.Thereleasedproductwillbecategorizedbytheprocessfamilyandbemonitoredonaquarterlybasisforcontinuouslyimprovingtheproductquality.TableofContents:I.ProductDescriptionII.PackageandDieinformationIII.EnvironmentalStressTestSummaryandResultIV.ReliabilityEvaluationI.ProductDescription:TheAO4407AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatechargewitha25Vgaterating.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.-RoHSCompliant-HalogenFreeDetailedinformationreferstodatasheet.II.Die/PackageInformation:AO4407AProcessStandardsub-micronLowvoltagePchannelPackageTypeSO8LeadFrameCuDieAttachAgEpoxyBondingCuwireMoldMaterialEpoxyresinwithsilicafillerMSL(moisturesensitivelevel)Level1basedonJ-STD-020Note*basedoninformationprovidedbyassemblerandmoldcompoundsupplierIII.ResultofReliabilityStressforAO4407ATestItemTestConditionTimePointLotAttributionTotalSamplesizeNumberofFailuresStandardMSLPrecondition168hr85°c/85%RH+3cyclereflow@260°c-29lots3575pcs0JESD22-A113HTGBTemp=150°c,Vgs=100%ofVgsmax168hrs500hrs1000hrs4lots308pcs77pcs/lot0JESD22-A108HTRBTemp=150°c,Vds=80%ofVdsmax168hrs500hrs1000hrs4lots308pcs77pcs/lot0JESD22-A108HAST130+/-2°c,85%RH,33.3psi,Vgs=100%ofVgsmax100hrs16lots(NoteA*)880pcs55pcs/lot0JESD22-A110PressurePot121°c,29.7psi,RH=100%96hrs20lots(NoteA*)1100pcs55pcs/lot0JESD22-A102TemperatureCycle-65°cto150°c,airtoair250/500cycles29lots(NoteA*)1595pcs55pcs/lot0JESD22-A104NoteA:Thereliabilitydatapresentstotalavailablegenericdatauptothepublisheddate.IV.ReliabilityEvaluationFITrate(perbillion):6MTTF=19828yearsThepresentationofFITratefortheindividualproductreliabilityisrestrictedbytheactualburn-insamplesizeoftheselectedproduct(AO4407A).FailureRateDeterminationisbasedonJEDECStandardJESD85.FITmeansonefailureperbillionhours.FailureRate=Chi2x109/[2(N)(H)(Af)]=1.83x109/[2x(2x4x77x1000)x258]=6MTTF=109/FIT=1.74x108hrs=19828yearsChi²=ChiSquaredDistribution,determinedbythenumberoffailuresandconfidenceintervalN=TotalNumberofunitsfromHTRBandHTGBtestsH=DurationofHTRB/HTGBtestingAf=AccelerationFactorfromTesttoUseConditions(Ea=0.7eVandTuse=55°C)AccelerationFactor[Af]=Exp[Ea/k(1/Tju–1/Tjs)]AccelerationFactorratiolist:55degC70degC85degC100degC115degC130degC150degCAf2588732135.642.591Tjs=Stressedjunctiontemperatureindegree(Kelvin),K=C+273.16Tju=Theusejunctiontemperatureindegree(Kelvin),K=C+273.16K=Boltzmann’sconstant,8.617164X10-5eV/K