UNISONIC TECHNOLOGIES CO., LTD
UT8205A Power MOSFET
www.unisonic.com.tw 1 of 3
Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-287.B
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UT8205A uses advanced technology to provide fast
switching, low on-resistance and cost-effectiveness. This device is
suitable for all commercial-industrial surface mount applications.
FEATURES
* RDS(ON) ≤28mΩ @VGS = 4.5 V
* Ultra low gate charge ( typical 23 nC )
* Low reverse transfer Capacitance ( CRSS = typical 150 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
G2G1
S1 S2
D
ORDERING INFORMATION
Ordering Number Pin Assignment
Lead Free Halogen-Free
Package
1 2 3 4 5 6 7 8
Packing
UT8205AL-AG6-R UT8205AG-AG6-R SOT-26 S1 D S2 G2 D G1 - - Tape Reel
UT8205AL-S08-R UT8205AG-S08-R SOP-8 D S1 S1 G1 G2 S2 S2 D2 Tape Reel
UT8205AL-P08-R UT8205AG-P08-R TSSOP-8 D S1 S1 G1 G2 S2 S2 D2 Tape Reel
(1) R: Tape Reel
(2) AG6: SOT-26, P08:TSSOP-8 S08:SOP-8
(3) G: Halogen Free, L: Lead Free
UT8205AL-AG6-R
(1) Packing Type
(2) Package Type
(3) Lead Plating
MARKING FOR SOT-26
UT8205A Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R502-287.B
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±12 V
Continuous ID 6 A Drain Current (Note 2)
Pulsed IDM 20 A
SOT-26 1.14 W
Power Dissipation (Ta=25°C) (Note 3)
SOP-8/TSSOP-8
PD 1 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
3. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER SYMBOL MIN TYP MAX UNIT
SOT-26 110 °C/W
SOP-8 78 °C/W Junction to Ambient (Note)
TSSOP-8
θJA
125 °C/W
Note: Pulse Test : Pulse width≤300μs, Duty cycle≤2%
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 20 V
Breakdown Voltage Temperature
Coefficient J
DSS
TΔ
BVΔ
ID=1mA, Reference to 25°C 0.03 V/°C
Drain-Source Leakage Current IDSS VDS=20V, VGS=0V, 1 μA
Gate-Source Leakage Current IGSS VGS=±8V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 0.5 1.5 V
VGS=4.5V, ID=6.0A 28 mΩDrain-Source On-State Resistance (Note) RDS(ON) VGS=2.5V, ID=5.2A 38 mΩ
DYNAMIC PARAMETERS
Input Capacitance CISS 1035 pF
Output Capacitance COSS 320 pF
Reverse Transfer Capacitance CRSS
VDS=20V, VGS=0V, f=1.0MHz
150 pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note) tD(ON) 30 ns
Turn-ON Rise Time tR 70 ns
Turn-OFF Delay Time tD(OFF) 40 ns
Turn-OFF Fall-Time tF
VGS=5V, VDS=10V, RD=10Ω,
RG=6Ω, ID=1A
65 ns
Total Gate Charge(Note) QG 23 nC
Gate Source Charge QGS 4.5 nC
Gate Drain Charge QGD
VDS =20V, VGS =5V, ID =6.0A
7 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note) VSD IS=1.7A, VGS=0V 1.2 V
Diode Continuous Forward Current IS VD=VG, VS=1.3V 1.54 A
Note: Surface mounted on 1 in2 copper pad of FR4 board; 208°C/W when mounted on min.
UT8205A Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 3 of 3
www.unisonic.com.tw QW-R502-287.B
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
0
D
ra
in
C
ur
re
nt
, I
D
(µ
A
)
Drain-Source Breakdown Voltage, BVDSS(V)
10 20 30
0
5 15 25
50
100
150
200
250
300
0.20
0
Drain Current vs. Gate Threshold
Voltage
D
ra
in
C
ur
re
nt
, I
D
(µ
A
)
Gate Threshold Voltage, VTH (V)
0.6 1.0
100
150
200
0.4 0.8 1.2
50
250
300
0
Source to Drain Voltage, VSD (V)
0
D
ra
in
C
ur
re
nt
,I
D
(A
)
0.2 0.60.4 0.8
0.4
0.8
1.2
1.6
2.0
0
Drain-Source On-State Resistance
Characteristics
D
ra
in
C
ur
re
nt
,I
D
(A
)
Drain to Source Voltage, VDS (mV)
50 100 150 200
0
250
1
2
3
4
5
6
7
300
VGS=2.5V
ID=5.2A
VGS=4.5V
ID=6A
Drain Current vs. Source to Drain
Voltage
1.0
0.2
0.6
1.0
1.4
1.8
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