NP3401MR_E上海南麟电子原厂PDF规格书

NP3401MRRev.1.0—Oct.26.20171www.natlinear.com30VP-ChannelEnhancementModeMOSFETDescriptionTheNP3401MRusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GeneralFeaturesVDS=-30V，ID=-4.2ARDS(ON)(Typ.)=39mΩ@VGS=-10VRDS(ON)(Typ.)=48mΩ@VGS=-4.5VRDS(ON)(Typ.)=60mΩ@VGS=-2.5VHighpowerandcurrenthandingcapabilityLeadfreeproductisacquiredSurfacemountpackageApplicationPWMapplicationsLoadswitchPackageSOT-23-3LSchematicdiagramDGSMarkingandpinassignmentSOT-23-3L(TOPVIEW)123341LGSD341—NP3401L—PackageInformationOrderingInformationPartNumberStorageTemperaturePackageDevicesPerReelNP3401MR-G-55°Cto+150°CSOT-23-3L3000AbsoluteMaximumRatings(TA=25℃unlessotherwisenoted)parametersymbollimitunitDrain-sourcevoltageVDS-30VGate-sourcevoltageVGS±12VDraincurrent-continuousa@Tj=125℃-pulsedbID-4.2AIDM-16.8ADrain-sourceDiodeforwardcurrentIs-1.25AMaximumpowerdissipationPD1.25WOperatingjunctionTemperaturerangeTj-55—150℃13823513305NP3401MRRev.1.0—Oct.26.20172www.natlinear.comElectricalCharacteristics(TA=25℃unlessotherwisenoted)ParameterSymbolConditionMinTypMaxUnitOFFCharacteristicsDrain-sourcebreakdownvoltageBVDSSVGS=0V,ID=-250µA-30--VZerogatevoltagedraincurrentIDSSVDS=-30V,VGS=0V---1µAGate-bodyleakageIGSSVDS=0V,VGS=±12V--±100nAONCharacteristicsGatethresholdvoltageVGS(th)VDS=VGS,ID=-250µA-0.5-0.9-1.5VDrain-sourceon-stateresistanceRDS(ON)VGS=-10V,ID=-4A-3950mΩVGS=-4.5V,ID=-3A-4860VGS=-2.5V,ID=-1A-6075ForwardtransconductancegfsVGS=-5V,ID=-4.2A-5-SDynamicCharacteristicsInputcapacitanceCISSVDS=-10V,VGS=0Vf=1.0MHz-900-pFOutputcapacitanceCOSS-85-ReversetransfercapacitanceCRSS-65-GateresistanceRgVDS=15mV，f=1.0MHz17ΩSwitchingCharacteristicsTurn-ondelaytimetD(ON)VDD=-15VID=-4.2AVGEN=-10VRL=10ohmRGEN=6ohm-2.83.5nsRisetimetr-3135Turn-offdelaytimetD(OFF)-5055Falltimetf-812TotalgatechargeQgVDS=-15V,ID=-4.2AVGS=-4.5V-8.8-nCGate-sourcechargeQgs-1.8-Gate-drainchargeQgd-2.7-BodyDiodeReverseRecoveryTimetrrIF=-4.2A,dI/dt=100A/ms22nSBodyDiodeReverseRecoveryChargeQrrIF=-4.2A,dI/dt=100A/ms1.8nCDRAIN-SOURCEDIODECHARACTERISTICSDiodeforwardvoltageVSDVGS=0V,Is=-4.2A--0.81-1.2VNotes:a.surfacemountedonFR4board,t≤10secb.pulsetest:pulsewidth≤300μs,duty≤2%ThermalCharacteristicsParameterSymbolTypMaxUnitsMaximumJunction-to-AmbientRθJA100125℃/WMaximumJunction-to-LeadRθJL6380℃/W13823513305NP3401MRRev.1.0—Oct.26.20173www.natlinear.comTypicalPerformanceCharacteristics0123450510152025-ID(A)-VDS(Volts)VGS=-2.0VVGS=-2.5VVGS=-4.5VVGS=-10VFig1:On-RegionCharacteristics0.00.51.01.52.02.53.005101520-ID(A)-VGS(Volts)VDS=-5VFigure2:TransferCharacteristics024681020406080100RDS(on)(mR)-ID(A)VGS=-2.5VVGS=-4.5VVGS=-10VFigure3:On-Resistancevs.DrainCurrentandGateVoltage020406080100120405060708090100RDS(ON)(mR)TemperatureVGS=-2.5V,ID=-2AVGS=-4.5V,ID=-3.7AVGS=-10V,ID=-4AFigure4:On-Resistancevs.JunctionTemperature0246810306090120150RDS(ON)(mR)-VGS(V)ID=-4AFigure5:On-Resistancevs.Gate-SourceVoltage0.00.20.40.60.81.01.205101520-IS(A)-VSD(V)Figure6:Body-DiodeCharacteristics13823513305NP3401MRRev.1.0—Oct.26.20174www.natlinear.comPackageInformationSOT-23-3LE1Dbee1EL0.2θcA1A2ASymbolDimensionsInMillimetersDimensionsInInchesMinMaxMinMaxA1.0501.2500.0410.049A10.0000.1000.0000.004A21.0501.1500.0410.045b0.3000.5000.0120.020c0.1000.2000.0040.008D2.8203.0200.1110.119E1.5001.7000.0590.067E12.6502.9500.1040.116e0.950(BSC)0.037(BSC)e11.8002.0000.0710.079L0.3000.6000.0120.024θ0°8°0°8°13823513305