CD4094中文数据手册YU

CD4094中文数据手册YU CD4094 位移位存储储储寄存器: CD4094是储储出储存和三储控制的串入/并出高速储储器～具有使用储储、功耗低、储储能力强和控制活等储点。灵 　　CD4094的引脚定储如储1。其中(1)脚储储存端～(2)脚储串行据储入端～数(3)脚储串行储储端。(1)脚储高储平储～8位行储出口并Q1,Q8在储储的上升沿串行储入而储化～随(1)脚储低储平储～储出储定。利用储存端可方便地储行片储和储储储出控制。(15)脚储行储出储控制端～并状(15)脚储低储平储～行储并出端储在高阻储～在用状CD4094作储示储出储～可使储示储储储。数(9)脚QS、(10)脚Q′S是串行数据储出端～用于储储。QS端在第9个串行储储的上升沿储始储出～Q′S端在第9个串行储储的下降沿储始储出。838 储子 当CD4094储源储5V储～储出储流大于3,2MA～灌储流储1 MA。串行储储储率可达2,5MHZ。838 储子 CD4094引脚储 CD4094真储 表 关于同志近三年现实表现材料材料类招标技术评分表图表与交易pdf视力表打印pdf用图表说话 pdf , Parallel Outputs 并行储出Serial Outputs 串行储出Output Clock Strobe Data Enable Q1 QN QS (Note 1) Q S 0 X X Q7 ?三储 三储 不储 0 X X Q7 ?三储 三储 不储 1 0 X Q7 ?不储 不储 不储 1 1 0 0 Q-1 Q7 不储 ?N 1 1 1 1 Q-1 Q7 ?不储 N 1 1 1 Q7 ?不储 不储 不储 CD4094内框部储路方储 Absolute Maximum Ratings 储储最大储定储, -0.5 to +18 VDC Supply Voltage储源储储(VDD) -0.5 to VDD +0.5 Input Voltage储入储储 (VIN) 838 储子VDC Storage Temperature Range储存度范储 温(TS) -65? to +150? Power Dissipation功耗 (PD) 700 mW Dual-In-Line 普通列封 双装新储储储 500 mW Small Outline 小外形封 装 Lead Temperature 储接度温(TL) Soldering, 10 seconds);储接10秒, 260? Recommended Operating Conditions 建储操作件,条 +3.0 to +15 VDC DC Supply Voltage 直流供储储储 (VDD) 0 to VDD VDC Input Voltage储入储储 (VIN) 838 储子 Operating Temperature Range工作度范储 温(TA) -40? to +85? DC Electrical Characteristics 直流储特性,气 Units -40?C +25?C +85?C SymbolParameter储位 Conditions 条件符号 参数 最小最大最小典型最大最小最大 Quiescent VDD = 5.0V 20 20 150 Device VDD = 10V 40 40 300 IDD μA Current静储储VDD = 15V 80 80 600 流 VDD=5.0V LOW Level 0.05 0 0.05 0.05 Output VOL |IO|?1.μAV VDD=10V 0.05 0 0.05 0.05 Voltage 储出 低储平储储 VDD=15V 0.05 0 0.05 0.05 VDD=5.0V HIGH Level 4.95 4.95 5.0 4.95 VOH Output |IO|?1μAV VDD=10V 9.95 9.95 10.0 9.95 Voltage 储出 高储平储储 VDD=15V 14.95 14.95 15.0 14.95 VILLOW Level VDD = 5.0V, VO = 1.5 1.5 1.5 V 0.5V or 4.5V VDD = 10V, VO = Input 3.0 3.0 3.0 1.0V or 9.0V Voltage 储入 低储平储储 838VDD = 15V, VO = 4.0 4.0 4.0 1.5V or 13.5V 储子 VDD = 5.0V, VO = 3.5 3.5 3.5 0.5V or 4.5V HIGH Level Input VDD = 10V, VO = VIH7.0 7.0 7.0 V Voltage 储入1.0V or 9.0V 高储平储储 VDD = 15V, VO = 11.0 11.0 11.0 1.5V or 13.5V LOW Level VDD=5.0V,VO=0.4V 0.52 0.44 0.88 0.36 Output VDD=10V,VO=0.5V 1.3 1.1 2.25 0.9 IOLmA Current 储出 低储平储流 VDD=15V,VO=1.5V 3.6 3.0 8.8 2.4 (Note 4) HIGH Level VDD=5.0V,VO =4.6V -0.52 -0.44 0.88 -0.36 Output VDD =10V,VO= 9.5V -1.3 -1.1 2.25 -0.9 IOHCurrent 储出mA 高储平储流 VDD=15V,VO =13.5V -3.6 -3.0 8.8 -2.4 (Note 4) Input VDD =15V,VIN =0V -0.3 -0.3 -1.0 IIN Current 储入μA VDD=15V,VIN =15V 0.3 0.3 1.0 储流 3-STATE Output VDD=15V,VIN=0V or Leakage IOZ 1 1 10 μA 15V Current 3储储 出漏储流 AC Electrical Characteristics 交流储特性,气 Symbol Conditions Units 最小 典型 最大 Parameter 参数 838 储子符 号条件 储位 VDD = 5.0V 300 600 tPHL, Propagation Delay Clock to QS VDD = 10V 125 250 ns tPLH VDD = 15V 95 190 VDD = 230 460 5.0V ns tPHL, Propagation Delay Clock to Q? S VDD = 10V110 220tPLH VDD = 15V 75 150 ns VDD = 5.0V 420 840 tPHL, Propagation Delay Clock to Parallel Out VDD = 10V 195 390 ns tPLH VDD = 15V 135 270 VDD = 5.0V 290 580 tPHL, Propagation Delay Strobe to Parallel Out VDD = 10V 145 290 ns tPLH VDD = 15V 100 200 VDD = 5.0V 140 280 Propagation Delay HIGH Level to HIGH tPHZ VDD = 10V 75 150 ns Impedance VDD = 15V 55 110 tPLZ Propagation Delay LOW Level to HIGH VDD = 5.0V 140 280 ns VDD = 10V 75 150 Impedance VDD = 15V 55 110 VDD = 5.0V 140 280 Propagation Delay HIGH Impedance to HIGH tPZH VDD = 10V 75 150 ns Level VDD = 15V 55 110 VDD = 5.0V 140 280 Propagation Delay HIGH Impedance to LOW tPZL VDD = 10V 75 150 ns Level VDD = 15V 55 110 VDD = 5.0V 100 200 tTHL, VDD = 10V 50 100 nsTransition Time储渡储储 tTLH VDD = 15V 40 80 VDD = 5.0V 80 40 tSU VDD = 10V 40 20 ns Set-Up Time Data to Clock 建立储储据储储数 VDD = 15V 20 10 VDD = 5.0V 1 Maximum Clock Rise and Fall Time最大储储上升和tr, tf VDD = 10V 1 ms 下降储储 VDD = 15V 1 VDD = 5.0V 200 100 tPC VDD = 10V 100 50 ns Minimum Clock Pulse Width最小储储储度 脉冲 VDD = 15V 83 40 VDD = 5.0V 200 100 tPS Minimum Strobe Pulse Width VDD = 10V 80 40 ns 　 VDD = 15V 70 35 VDD = 5.0V 1.5 3.0 fmax VDD = 10V 3.0 6.0 MHz Maximum Clock Frequency 最大储储储率 VDD = 15V 4.0 8.0 Any Input 5.0 7.5 pF CIN Input Capacitance 储入储容 储储储路和3储储序储 储序储