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ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/4/03 DB92546m-AAS/A3 0.26 20.32 19.32 4.0 3.0 0.5 7.62 13° Max 7.0 6.0 2.54 1.2 0.5 1.2 3.0 4.0 3.0 3.35 7.0 6.0 0.5 0.5 7.62 1 2 4 3 0.26 13° Max 2.54 3.0 10.16 9.16 4.0 3.0 3.35 0.5 7.0 6.0 7.62 2 3 4 7 6 5 1.2 13° Max 0.5 0.26 2.54 Dimensions in mm HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - - STD - G form - SMD approved to CECC 00802 l BSI approved - Certificate No. 8001 DESCRIPTION The TLP521, TLP521-2, TLP521-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES l Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio ( 50% min) l High Isolation Voltage (5.3kV RMS ,7.5kV PK ) l High BV CEO ( 55Vmin ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances 3.35 5.08 4.08 1 8 TLP521 TLP521-2 TLP521-4 OPTION G 7.62SURFACE MOUNT OPTION SM 10.16 0.26 1 2 3 7 8 16 15 10 9 6 11 5 12 14 4 13 10.46 9.86 0.6 0.1 1.25 0.75 TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4 TLP521XGB, TLP521-2XGB, TLP521-4XGB TLP521X, TLP521-2X, TLP521-4X DB92546m-AAS/A3 PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V F ) 1.0 1.15 1.3 V I F = 10mA Reverse Current (I R ) 10 µA V R = 4V Output Collector-emitter Breakdown (BV CEO ) 55 V I C = 0.5mA ( Note 2 ) Emitter-collector Breakdown (BV ECO ) 6 V I E = 100µA Collector-emitter Dark Current (I CEO ) 100 nA V CE = 20V Coupled Current Transfer Ratio (CTR) (Note 2) TLP521, TLP521-2, TLP521-4 50 600 % 5mA I F , 5V V CE CTR selection available BL 200 600 % GB 100 600 % GB 30 % 1mA I F , 0.4V V CE Collector-emitter Saturation VoltageV CE (SAT) 0.4 V 8mA I F , 2.4mA I C -GB 0.4 V 1mA I F , 0.2mA I C Input to Output Isolation Voltage V ISO 5300 V RMS See note 1 7500 V PK See note 1 Input-output Isolation Resistance R ISO 5x1010 Ω V IO = 500V (note 1) Response Time (Rise), tr 4 µs V CE = 2V , Response Time (Fall), tf 3 µs I C = 2mA, R L = 100Ω Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. 7/4/03 ELECTRICAL CHARACTERISTICS ( T A = 25°C Unless otherwise noted ) ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current 50mA Reverse Voltage 6V Power Dissipation 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BV CEO 55V Emitter-collector Voltage BV ECO 6V Power Dissipation 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) DB92546m-AAS/A3 7/4/03 50 -30 0 25 50 75 100 125 Ambient temperature T A ( °C ) 150 0 200 Ambient temperature T A ( °C ) C ol le ct or p ow er d is si pa ti on P C ( m W ) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Ambient Temperature -30 0 25 50 75 100 Ambient temperature T A ( °C ) Collector-emitter voltage V CE ( V ) C ol le ct or -e m itt er s at ur at io n vo lta ge V C E (S A T ) ( V ) Collector-emitter SaturationVoltage vs. Ambient Temperature 100 T A = 25°C 0 5 10 15 20 25 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 I F = 5mA I C = 1mA Fo rw ar d cu rr en t I F ( m A ) Collector Current vs. Low Collector-emitter Voltage 5 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 C ol le ct or c ur re nt I C ( m A ) I F = 2mA Collector Current vs. Collector-emitter Voltage Collector-emitter voltage V CE ( V ) C ol le ct or c ur re nt I C ( m A ) Current Transfer Ratio vs. Forward Current Forward current I F (mA) C ur re nt t ra ns fe r ra ti o C T R ( % ) 1 2 5 10 20 50 0 80 120 160 200 240 0 2 4 6 8 10 0 10 20 30 40 50 40 50 30 20 10 15 T A = 25°C 280 320 I F = 5mA V CE = 5V T A = 25°C