NTE3041(光耦）

NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide in- frared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: � High Current Transfer Ratio: 100% Min @ Spec Conditions � Guaranteed Switching Speeds Applications: � General Purpose Switching Circuits � Interfacing and Coupling Systems of Different Potentials and Impedances � Regulation Feedback Circuits � Monitor & Detection Circuits � Solid State Relays Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Input LED Reverse Voltage, VR 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Forward Current, IF 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LED Power Dissipation (With Negligible Power in Output Detector), PD 120mW. . . . . . . . . . . . . . . . . Derate Above 25°C 1.41mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Transistor Collector–Emitter Voltage, VCEO 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage, VEBO 7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Base Voltage, VCBO 70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Collector Current, IC 150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Detector Power Dissipation (With Negligible Power in Output Detector), PD 150mW. . . . . . . . . . . . . Derate Above 25°C 1.76mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Device Isolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO 7500V. . . . . . . . . . Total Device Power Dissipation, PD 250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above 25°C 2.94mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Ambient Temperature Range, TA –55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (During Soldering, 1/16” from case, 10sec), TL +260°C. . . . . . . . . . . . . . . . . . . . . Note 1. Isolation Surge Voltage is an internal device dielectric breakdown rating. For this test, Pin1 and Pin2 are common, and Pin4, Pin5, and Pin6 are common. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Input LED Forward Voltage VF IF = 10mA 0.8 1.15 1.5 V IF = 10mA, TA = –55°C 0.9 1.3 1.7 V IF = 10mA, TA = +100°C 0.7 1.05 1.4 V Reverse Leakage Current IR VR = 6V – – 10 µA Capacitance CJ V = 0, f = 1MHz – 18 – pF Output Transistor Collector–Emitter Dark Current ICEO VCE = 10V – 1 50 nA VCE = 30V, TA = +100°C – – 500 µA Collector–Base Dark Current ICBO VCB = 10V – 0.2 20 nA VCB = 10V, TA = +100°C – 100 – nA Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA 30 45 – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA 70 100 – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA 7.0 7.8 – V DC Current Gain hFE IC = 2mA, VCE = 5V – 400 – Collector–Emitter Capacitance CCE VCE = 5V, f = 1MHz – 7 – pF Collector–Base Capacitance CCB VCB = 0, f = 1MHz – 19 – pF Emitter–Base Capacitance CEB VEB = 0, f = 1MHz – 9 – pF Coupled Output Collector Current IC IF = 10mA, VCE = 10V 10 30 – mA IF = 10mA, VCE = 10V, TA = –55°C 4 – – mA IF = 10mA, VCE = 10V, TA = +100°C 4 – – mA Collector–Emitter Saturation Voltage VCE(sat) IC = 0.5mA, IF = 10mA – 0.14 0.3 V Turn–On Time ton IC = 2mA, VCC = 10V, RL = 100Ω – 7.5 10 µs Turn–Off Time toff – 5.7 10 µs Rise Time tr – 3.2 – µs Fall Time tf – 4.7 – µs Isolation Voltage VISO f = 60Hz, t = 1sec 7500 – – V Isolation Current IISO VI–O = 3550Vpk – – 100 µA Isolation Resistance RISO V = 500V 1011 – – Ω Isolation Capacitance CISO V = 0, f = 1MHz – 0.2 2.0 pF Pin Connection Diagram Emitter Collector Base1 2 Anode Cathode 3N.C. 6 5 4 .350 (8.89) Max .350 (8.89) Max .260 (6.6) Max .200 (5.08) Max .085 (2.16) Max .100 (2.45) .300 (7.62) .070 (1.78) Max 1 2 3 6 5 4