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TLP176GA中文资料

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TLP176GA中文资料元器件交易网www.cecb2b.comTLP176GATOSHIBAPhotocouplerPhotorelayTLP176GAPBXUnit:mmTelecommunicationModem・FAXCards,ModemsInPCMeasurementInstrumentationTheTOSHIBATLP176GAconsistsofanaluminumgalliumarsenideinfraredemittingdiodeopticallycoupledtoaphoto-MOSFETinaSOP,which...

TLP176GA中文资料
元器件交易网www.cecb2b.comTLP176GATOSHIBAPhotocouplerPhotorelayTLP176GAPBXUnit:mmTelecommunicationModem・FAXCards,ModemsInPCMeasurementInstrumentationTheTOSHIBATLP176GAconsistsofanaluminumgalliumarsenideinfraredemittingdiodeopticallycoupledtoaphoto-MOSFETinaSOP,whichissuitableforsurfacemountassembly.TheTLP176GAissuitableforthemodemapplicationswhichrequirespacesavings.·4pinSOP(2.54SOP4):2.1mmhigh,2.54mmpitch·1-form-A·Peakoff-statevoltage:400V(min)·TriggerLEDcurrent:3mA(max)·On-statecurrent:120mA(max)·On-stateresistance:35Ω(max)·Isolationvoltage:1500Vrms(min)JEDEC―PinConfiguration(topview)JEITA―TOSHIBA11-5H1Weight:0.1g(typ.)14231:ANODE2:CATHODE3:DRAIN4:DRAIN12002-01-08元器件交易网www.cecb2b.comTLP176GAMaximumRatings(Ta=25°C)CharacteristicsSymbolRatingUnitForwardcurrentIF50mAForwardcurrentderatingDI/°C-0.5mA/°C(Ta=>25°C)FPeakforwardcurrentLEDI1A(100mspulse,100pps)FPReversevoltageVR5VJunctiontemperatureTj125°COff-stateoutputterminalvoltageVOFF400VOn-statecurrentION120mAOn-statecurrentderating>DION/°C-1.2mA/°CDetector(Ta=25°C)JunctiontemperatureTj125°COperatingtemperaturerangeTopr-40to85°CStoragetemperaturerangeTstg-55to125°CLeadsolderingtemperature(10s)Tsol260°CIsolationvoltageBV1500Vrms(AC,1min,R.H.=<60%)(Note1)SNote1:Deviceconsideredatwo-terminaldevice:LEDsidepinsshortedtogether,andDETECTORsidepinsshortedtogether.RecommendedOperatingConditionsCharacteristicsSymbolMinTyp.MaxUnitSupplyvoltageVDD¾¾320VForwardcurrentIF57.525mAOn-statecurrentION¾¾120mAOperatingtemperatureTopr-20¾65°CIndividualElectricalCharacteristics(Ta=25°C)CharacteristicsSymbolTestConditionMinTyp.MaxUnitForwardvoltageVFIF=10mA1.01.151.3VReversecurrentIRVR=5V¾¾10mALEDCapacitanceCTV=0,f=1MHz¾30¾pFOff-statecurrentIOFFVOFF=400V¾¾1mAtortor==¾¾Detec-CapacitanceCOFFV0,f1MHz70pFCoupledElectricalCharacteristics(Ta=25°C)CharacteristicsSymbolTestConditionMinTyp.MaxUnitTriggerLEDcurrentIFTION=120mA¾13mAReturnLEDcurrentIFCIOFF=100mA0.1¾¾mAOn-stateresistanceRONION=120mA,IF=5mA¾1735W22002-01-08元器件交易网www.cecb2b.comTLP176GAIsolationCharacteristics(Ta=25°C)CharacteristicsSymbolTestConditionMinTyp.MaxUnitCapacitanceinputtooutputCSVS=0,f=1MHz¾0.8¾pF<1014IsolationresistanceRSVS=500V,R.H.=60%5´1010¾WAC,1min1500¾¾VrmsIsolationvoltageBVSAC,1s,inoil¾3000¾DC,1min,inoil¾3000¾VdcSwitchingCharacteristics(Ta=25°C)CharacteristicsSymbolTestConditionMinTyp.MaxUnitTurn-ontimetONRL=200W(Note2)¾0.31ms==Turn-offtimetOFFVDD20V,IF5mA¾0.11msNote2:SwitchingtimetestcircuitIFVDD14RLIFVOUTVOUT2390%10%tONtOFF32002-01-08元器件交易网www.cecb2b.comTLP176GAI–TaI–TaFON10028024080(mA)(mA)F200(mA)(mA)60ON160120408020currentIOn-state40AllowableforwardcurrentI00-20020406080100120-20020406080100120AmbienttemperatureTa(°C)AmbienttemperatureTa(°C)I–VI–VFFONON100200Ta=25°C50Ta=25°C=30IF5mA10010(mA)(mA)(mA)FON5301-0.5100ForwardcurrentIForwardcurrentIOn-state0.30.1-2000.60.811.21.41.61.8-3-2-10123ForwardvoltageVF(V)On-statevoltageVON(V)R–TaI–TaONFT605ION=120mAION=120mAI=5mAFt<1s)50W4((mA)ON40FT3302201On-stateresistanceR10LEDTriggercurrentI00-20020406080100-40-20020406080100AmbienttemperatureTa(°C)AmbienttemperatureTa(°C)42002-01-08元器件交易网www.cecb2b.comTLP176GAt,t–It,t–TaONOFFFONOFF20001000=tONTa25°CVDD=20V,RL=200WV=20V,R=200W=s)DDLIF5mAm1000s)s)m800((500tONOFF,tOFF300,t600ONON400100tOFFSwitchingtimet50200tOFFSwitchingtimet301351030501000-40-20020406080100InputcurrentIF(mA)AmbienttemperatureTa(°C)I–TaOFF1000VOFF=400V500300(nA)100OFF5030105currentIOff-state31-20020406080100AmbienttemperatureTa(°C)52002-01-08元器件交易网www.cecb2b.comTLP176GARESTRICTIONSONPRODUCTUSE000707EBC·TOSHIBAiscontinuallyworkingtoimprovethequalityandreliabilityofitsproducts.Nevertheless,semiconductordevicesingeneralcanmalfunctionorfailduetotheirinherentelectricalsensitivityandvulnerabilitytophysicalstress.Itistheresponsibilityofthebuyer,whenutilizingTOSHIBAproducts,tocomplywiththestandardsofsafetyinmakingasafedesignfortheentiresystem,andtoavoidsituationsinwhichamalfunctionorfailureofsuchTOSHIBAproductscouldcauselossofhumanlife,bodilyinjuryordamagetoproperty.Indevelopingyourdesigns,pleaseensurethatTOSHIBAproductsareusedwithinspecifiedoperatingrangesassetforthinthemostrecentTOSHIBAproductsspecifications.Also,pleasekeepinmindtheprecautionsandconditionssetforthinthe“HandlingGuideforSemiconductorDevices,”or“TOSHIBASemiconductorReliabilityHandbook”etc..·TheTOSHIBAproductslistedinthisdocumentareintendedforusageingeneralelectronicsapplications(computer,personalequipment,officeequipment,measuringequipment,industrialrobotics,domesticappliances,etc.).TheseTOSHIBAproductsareneitherintendednorwarrantedforusageinequipmentthatrequiresextraordinarilyhighqualityand/orreliabilityoramalfunctionorfailureofwhichmaycauselossofhumanlifeorbodilyinjury(“UnintendedUsage”).UnintendedUsageincludeatomicenergycontrolinstruments,airplaneorspaceshipinstruments,transportationinstruments,trafficsignalinstruments,combustioncontrolinstruments,medicalinstruments,alltypesofsafetydevices,etc..UnintendedUsageofTOSHIBAproductslistedinthisdocumentshallbemadeatthecustomer’sownrisk.·Galliumarsenide(GaAs)isasubstanceusedintheproductsdescribedinthisdocument.GaAsdustandfumesaretoxic.Donotbreak,cutorpulverizetheproduct,orusechemicalstodissolvethem.Whendisposingoftheproducts,followtheappropriateregulations.Donotdisposeoftheproductswithotherindustrialwasteorwithdomesticgarbage.·Theproductsdescribedinthisdocumentaresubjecttotheforeignexchangeandforeigntradelaws.·Theinformationcontainedhereinispresentedonlyasaguidefortheapplicationsofourproducts.NoresponsibilityisassumedbyTOSHIBACORPORATIONforanyinfringementsofintellectualpropertyorotherrightsofthethirdpartieswhichmayresultfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanyintellectualpropertyorotherrightsofTOSHIBACORPORATIONorothers.·Theinformationcontainedhereinissubjecttochangewithoutnotice.62002-01-08
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