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FEATURES
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
PWP PACKAGE
(TOP VIEW)
GND
GAIN0
GAIN1
LOUT+
LLINEIN
LHPIN
PVDD
RIN
LOUT–
LIN
BYPASS
GND
GND
RLINEIN
SHUTDOWN
ROUT+
RHPIN
VDD
PVDD
HP/LINE
ROUT–
SE/BTL
PC-BEEP
GND
DESCRIPTION
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
2.6-W STEREO AUDIO POWER AMPLIFIER WITH FOUR
SELECTABLE GAIN SETTINGS AND MUX CONTROL
• Compatible With PC 99 Desktop Line-Out Into
10-kΩ Load
• Internal Gain Control, Which Eliminates
External Gain-Setting Resistors
• 2.6-W/Ch Output Power Into 3-Ω Load
• Input MUX Select Terminal
• PC-Beep Input
• Depop Circuitry
• Stereo Input MUX
• Fully Differential Input
• Low Supply Current and Shutdown Current
• Surface-Mount Power Packaging 24-Pin
TSSOP PowerPAD™
The TPA0312 is a stereo audio power amplifier in a 24-pin TSSOP thermally enhanced package capable of
delivering 2.6 W of continuous RMS power per channel into 3-Ω loads. This device minimizes the number of
external components needed, simplifying the design, and freeing up board space for other features. When driving
1 W into 8-Ω speakers, the TPA0312 has less than 0.65% THD+N across its specified frequency range. Included
within this device is integrated depop circuitry that virtually eliminates transients that cause noise in the speakers.
Amplifier gain is internally configured and controlled by way of two terminals (GAIN0 and GAIN1). BTL gain
settings of 6 dB, 10 dB, 15.6 dB, and 21.6 dB (inverting) are provided, whereas SE gain is always configured as
4.1 dB for headphone drive. An internal input MUX allows two sets of stereo inputs to the amplifier. The HP/LINE
terminal allows the user to select which MUX input is active, regardless of whether the amplifier is in SE or BTL
mode. In notebook applications, where internal speakers are driven as BTL and the line outputs (often
headphone drive) are required to be SE, the TPA0312 automatically switches into SE mode when the SE/BTL
input is activated, and this reduces the gain to 4.1 dB.
The TPA0312 consumes only 6 mA of supply current during normal operation. A miserly shutdown mode
reduces the supply current to 150 µA.
The PowerPAD™ package (PWP) delivers a level of thermal performance that was previously achievable only in
TO-220-type packages. Thermal impedances of approximately 35°C/W are readily realized in multilayer PCB
applications. This allows the TPA0312 to operate at full power into 8-Ω loads at an ambient temperature of 85°C.
AVAILABLE OPTIONS
PACKAGED DEVICE
TA TSSOP (1) (PWP)
–40°C to 85°C TPA0312PWP
(1) The PWP package is available taped and reeled. To order a taped
and reeled part, add the suffix R to the part number (e.g.,
TPA0312PWPR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Copyright © 2000–2004, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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ROUT+
−
+
−
+
R
MUX
Volume
Control
PC
Beep
MUX
Control Depop
Circuitry
Power
Management
−
+
−
+
L
MUX
Volume
Control
RHPIN
RLINEIN
GAIN1
RIN
PC-BEEP
SE/BTL
LHPIN
LLINEIN
LIN
ROUT−
PVDD
VDD
BYPASS
SHUTDOWN
GND
LOUT+
LOUT−
Volume
Control
Volume
Control
HP/LINE
GAIN0
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
FUNCTIONAL BLOCK DIAGRAM
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TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
TERMINAL FUNCTIONS
TERMINAL
I/O DESCRIPTION
NAME NO.
BYPASS 11 Tap to voltage divider for internal mid-supply bias generator
GAIN0 2 I Bit 0 of gain control
GAIN1 3 I Bit 1 of gain control
1, 12, 13,GND Ground connection for circuitry. Connected to the thermal pad.24
LHPIN 6 I Left-channel headphone input, selected when SE/BTL is held high
LIN 10 I Common left input for fully differential input. AC ground for single-ended inputs.
LLINEIN 5 I Left-channel line input, selected when SE/BTL is held low
LOUT+ 4 O Left-channel positive output in BTL mode and positive output in SE mode
LOUT- 9 O Left-channel negative output in BTL mode and high-impedance in SE mode
The input for PC Beep mode. PC-BEEP is enabled when a > 1.5-V (peak-to-peak) square wave is inputPC-BEEP 14 I to PC-BEEP
HP/LINE is the input MUX control input. When the HP/LINE terminal is held high, the headphone inputs
HP/LINE 17 I (LHPIN or RHPIN [6, 20]) are active. When the HP/LINE terminal is held low, the line inputs (LLINEIN or
RLINEIN [5, 23]) are active.
PVDD 7, 18 I Power supply for output stage
RHPIN 20 I Right-channel headphone input, selected when SE/BTL is held high
RIN 8 I Common right input for fully differential input. AC ground for single-ended inputs.
RLINEIN 23 I Right-channel line input, selected when SE/BTL is held low
ROUT+ 21 O Right-channel positive output in BTL mode and positive output in SE mode
ROUT- 16 O Right-channel negative output in BTL mode and high-impedance in SE mode
SHUTDOWN 22 I Places entire IC in shutdown mode when held low, except PC-BEEP remains active
SE/BTL 15 I Hold SE/BTL low for BTL mode and hold high for SE mode.
VDD 19 I Analog VDD input supply. This terminal needs to be isolated from PVDD to achieve highest performance.
Connect to ground. Must be soldered down in all applications to properly secure the device on the PCThermal Pad board.
3
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ABSOLUTE MAXIMUM RATINGS
DISSIPATION RATING TABLE
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
over operating free-air temperature range (unless otherwise noted) (1)
VDD Supply voltage 6 V
VI Input voltage –0.3 V to VDD +0.3 V
Continuous total power dissipation Internally limited (see Dissipation Rating Table)
TA Operating free-air temperature range –40°C to 85°C
TJ Operating junction temperature range –40°C to 150°C
Tstg Storage temperature range –65°C to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
PACKAGE TA≤ 25°C DERATING FACTOR TA = 70°C TA = 85°C
PWP 2.7 W (1) 21.8 mW/°C 1.7 W 1.4 W
(1) See the Texas Instruments document, PowerPAD Thermally Enhanced Package Application Report
(literature number SLMA002), for more information on the PowerPAD package. The thermal data was
measured on a PCB layout based on the information in the section entitled Texas Instruments
Recommended Board for PowerPAD of the before-mentioned document.
MIN MAX UNIT
VDD Supply voltage 4.5 5.5 V
SE/BTL, HP/LINE, GAIN0, GAIN1 0.8 x VDDVIH High-level input voltage VSHUTDOWN 2
SE/BTL, HP/LINE 0.6 x VDD
VIL Low-level input voltage GAIN0, GAIN1 0.4 x VDD V
SHUTDOWN 0.8
TA Operating free-air temperature –40 85 °C
at specified free-air temperature, VDD = 5 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|VOO| Output offset voltage (measured differentially) VI = 0, Av = 6 dB 25 mV
PSRR Power supply rejection ratio VDD = 4.5 V to 5.5 V 77 dB
|IIH| High-level input current VDD = 5.5 V, VI = VDD 1 µA
|IIL| Low-level input current VDD = 5.5 V, VI = 0 V 1 µA
BTL mode 6 10
IDD Supply current mASE mode 3 5
IDD(SD) Supply current, shutdown mode 150 300 µA
4
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OPERATING CHARACTERISTICS
TYPICAL CHARACTERISTICS
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
VDD = 5 V, TA = 25°C, RL = 8 Ω , Gain = 6 dB, BTL mode
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
THD + N= 10% 2.6
PO Output power RL = 3 Ω WTHD + N = 1%, 2.05
THD + N Total harmonic distortion plus noise PO = 1 W, f = 20 Hz to 15 kHz 0.65%
BOM Maximum output power bandwidth THD = 5% >15 kHz
Supply ripple rejection ratio f = 1 kHz, CB = 0.47 µF BTL mode 72 dB
SNR Signal-to-noise ratio 105 dB
BTL mode 20CB = 0.47 µF, f = 20 HzVn Noise output voltage µVRMSto 20 kHz SE mode 18
ZI Input impedance See Table 1
TABLE OF GRAPHS
FIGURE
1, 4-6, 9-11,
vs Output power 14-16, 18
THD+N Total harmonic distortion plus noise 2, 3, 7, 8, 12,
vs Frequency 13, 17, 19
vs Output voltage 20
Vn Output noise voltage vs Bandwidth 21
Supply ripple rejection ratio vs Frequency 22, 23
Crosstalk vs Frequency 24, 25
Shutdown attenuation vs Frequency 26
SNR Signal-to-noise ratio vs Frequency 27
Closed-loop response 28-30
PO Output power vs Load resistance 31, 32
vs Output power 33, 34
PD Power dissipation
vs Ambient temperature 35
5
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0.1%
0.01%
0.5 0.75 1 1.25 1.5 1.75 2
1%
10%
2.25 2.5 2.75 3
PO − Output Power − W
AV = 6 dB
f = 1 kHz
BTL
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
RL = 8 Ω RL = 3 Ω
RL = 4 Ω
0.01%
10%
20 100 1k 10k 20k
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f − Frequency − Hz
1%
0.1%
PO = 1.75 W
RL = 3 Ω
BTL
AV = 15.6 dB
AV = 6 dBAV = 21.6 dB
0.1%
0.01%
0.01 0.1
1%
10%
1 10
f = 20 Hz
f = 1 kHz
PO − Output Power − W
RL = 3 Ω
AV = 6 dB
BTL
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f = 15 kHz
0.01%
10%
20 100 1k 10k 20k
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f − Frequency − Hz
1%
0.1%
RL = 3 Ω
AV = 6 dB
BTL
PO = 1.75 W
PO = 0.5 W
PO = 1.0 W
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
TOTAL HARMONIC DISTORTION PLUS NOISE TOTAL HARMONIC DISTORTION PLUS NOISE
vs vs
OUTPUT POWER FREQUENCY
Figure 1. Figure 2.
TOTAL HARMONIC DISTORTION PLUS NOISE TOTAL HARMONIC DISTORTION PLUS NOISE
vs vs
FREQUENCY OUTPUT POWER
Figure 3. Figure 4.
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0.1%
0.01%
0.01 0.1
1%
10%
1 10
f = 20 Hz
f = 1 kHz
PO − Output Power − W
RL = 3 Ω
AV = 15.6 dB
BTL
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f = 15 kHz
0.1%
0.01%
0.01 0.1
1%
10%
1 10
f = 20 Hz
f = 1 kHz
PO − Output Power − W
RL = 3 Ω
AV = 21.6 dB
BTL
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se f = 15 kHz
0.01%
10%
20 100 1k 10k 20k
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f − Frequency − Hz
1%
0.1%
PO = 1.75 W
RL = 3 Ω
BTL
AV = 15.6 dB
AV = 6 dB
AV = 21.6 dB
0.01%
10%
20 100 1k 10k 20k
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f − Frequency − Hz
1%
0.1%
RL = 4 Ω
AV = 6 dB
BTL
PO = 0.25 W
PO = 1.0 W
PO = 1.5 W
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
TOTAL HARMONIC DISTORTION PLUS NOISE TOTAL HARMONIC DISTORTION PLUS NOISE
vs vs
OUTPUT POWER OUTPUT POWER
Figure 5. Figure 6.
TOTAL HARMONIC DISTORTION PLUS NOISE TOTAL HARMONIC DISTORTION PLUS NOISE
vs vs
FREQUENCY FREQUENCY
Figure 7. Figure 8.
7
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0.1%
0.01%
0.01 0.1
1%
10%
1 10
f = 20 Hz
f = 1 kHz
PO − Output Power − W
RL = 4 Ω
AV = 6 dB
BTL
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f = 15 kHz
0.1%
0.01%
0.01 0.1
1%
10%
1 10
f = 20 Hz
f = 1 kHz
PO − Output Power − W
RL = 4 Ω
AV = 15.6 dB
BTLT
HD
+N
−
To
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f = 15 kHz
0.1%
0.01%
0.01 0.1
1%
10%
1 10
f = 20 Hz
f = 1 kHz
PO − Output Power − W
RL = 4 Ω
AV = 21.6 dB
BTLT
HD
+N
−
To
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se f = 15 kHz
0.01%
10%
20 100 1k 10k 20k
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f − Frequency − Hz
1%
0.1%
RL = 8 Ω
AV = 6 dB
BTL
PO = 0.25 W
PO = 1.0 W
PO = 0.5 W
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
TOTAL HARMONIC DISTORTION PLUS NOISE TOTAL HARMONIC DISTORTION PLUS NOISE
vs vs
OUTPUT POWER OUTPUT POWER
Figure 9. Figure 10.
TOTAL HARMONIC DISTORTION PLUS NOISE TOTAL HARMONIC DISTORTION PLUS NOISE
vs vs
OUTPUT POWER FREQUENCY
Figure 11. Figure 12.
8
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0.1%
0.01%
0.01 0.1
1%
10%
1 10
f = 20 Hz
f = 1 kHz
PO − Output Power − W
RL = 8 Ω
AV = 6 dB
BTL
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f = 15 kHz
0.01%
10%
20 100 1k 10k 20k
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f − Frequency − Hz
1%
0.1%
PO = 1 W
RL = 8 Ω
BTL
AV = 15.6 dB
AV = 6 dB
AV = 21.6 dB
0.1%
0.01%
0.01 0.1
1%
10%
1 10
f = 20 Hz
f = 1 kHz
PO − Output Power − W
RL = 8 Ω
AV = 15.6 dB
BTL
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f = 15 kHz
0.1%
0.01%
0.01 0.1
1%
10%
1 10
f = 20 Hz
f = 1 kHz
PO − Output Power − W
RL = 8 Ω
AV = 21.6 dB
BTL
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f = 15 kHz
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
TOTAL HARMONIC DISTORTION PLUS NOISE TOTAL HARMONIC DISTORTION PLUS NOISE
vs vs
FREQUENCY OUTPUT POWER
Figure 13. Figure 14.
TOTAL HARMONIC DISTORTION PLUS NOISE TOTAL HARMONIC DISTORTION PLUS NOISE
vs vs
OUTPUT POWER OUTPUT POWER
Figure 15. Figure 16.
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0.1%
0.01%
0.01 0.1
1%
10%
1
PO − Output Power − W
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
RL = 32 Ω
AV = 4.1 dB
SE
f = 20 Hz
f = 1 kHz
f = 15 kHz
0.01%
10%
20 100 1k 10k 20k
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f − Frequency − Hz
RL = 32 Ω
AV = 4.1 dB
SE
PO = 75 mW
PO = 25 mW
PO = 50 mW
1%
0.1%
0.001%
10%
20 100 1k 10k 20k
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
f − Frequency − Hz
1%
0.1%
RL = 10 kΩ
AV = 4.1 dB
SE
VO = 1 VRMS
0.01%
0.001%
10%
0.1 1 3
TH
D+
N
−T
o
ta
l H
ar
m
on
ic
D
is
to
rti
on
+
N
oi
se
1%
0.1%
RL = 10 kΩ
AV = 4.1 dB
SE
f = 20 Hz
0.01%
f = 15 kHz
f = 1 kHz
VO − Output Voltage − VRMS
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
TOTAL HARMONIC DISTORTION PLUS NOISE TOTAL HARMONIC DISTORTION PLUS NOISE
vs vs
FREQUENCY OUTPUT POWER
Figure 17. Figure 18.
TOTAL HARMONIC DISTORTION PLUS NOISE TOTAL HARMONIC DISTORTION PLUS NOISE
vs vs
FREQUENCY OUTPUT VOLTAGE
Figure 19. Figure 20.
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60
0
10 100 1k 10k
VDD = 5 V
RL = 4Ω
−
O
ut
pu
t N
oi
se
V
o
lta
ge
−
V
n
Vµ
100
90
70
80
50
40
30
20
10
AV = 21.6 dB
AV = 6 dB
AV = 15.6 dB
BW − Bandwidth − Hz
−120
−40
20 100 1k 10k 20k
f − Frequency − Hz
−60
−80
−100
RL = 8 Ω
CB = 0.47 µF,
AV = 6 dB
BTL
−20
0
Su
pp
ly
R
ip
pl
e
Re
jec
tio
n R
ati
o −
dB
−120
−40
20 100 1k 10k 20k
f − Frequency − Hz
−60
−80
−100
RL = 32 Ω
CB = 0.47 µF,
AV =4.1 dB
SE
−20
0
Su
pp
ly
R
ip
pl
e
Re
jec
tio
n R
ati
o −
dB
−120
−40
20 100 1k 10k 20k
Cr
os
st
al
k
−
dB
f − Frequency − Hz
−60
−80
−100
PO = 1 W
RL = 8 Ω
Av = 6 dB
BTL
−20
0
LEFT TO RIGHT
RIGHT TO LEFT
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
OUTPUT NOISE VOLTAGE SUPPLY RIPPLE REJECTION RATIO
vs vs
BANDWIDTH FREQUENCY
Figure 21. Figure 22.
SUPPLY RIPPLE REJECTION RATIO CROSSTALK
vs vs
FREQUENCY FREQUENCY
Figure 23. Figure 24.
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−120
−40
20 100 1k 10k 20k
Cr
os
st
al
k
−
dB
f − Frequency − Hz
−60
−80
−100
VO = 1 VRMS
RL = 10 kΩ
Av = 4.1 dB
SE
−20
0
LEFT TO RIGHT
RIGHT TO LEFT
−120
−40
20 100 1k 10k 20k
Sh
ut
do
w
n
At
te
nu
at
io
n
−
db
f − Frequency − Hz
−60
−80
−100
VI = 1 VRMS
−20
0
RL = 8 Ω, BTL
RL = 32 Ω, SE
RL = 10 kΩ, SE
60
120
20 100 1k 10k 20k
SN
R
−
Si
gn
al
-T
o
-N
oi
se
R
at
io
−
d
B
f − Frequency − Hz
110
100
90
130
140
70
80
PO = 1 W
RL = 8 Ω
BTL
AV = 21.6 dB
AV = 15.6 dBAV = 6 dB
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
CROSSTALK SHUTDOWN ATTENUATION
vs vs
FREQUENCY FREQUENCY
Figure 25. Figure 26.
SIGNAL-TO-NOISE RATIO
vs
FREQUENCY
Figure 27.
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−10
5
10 100 1k 10k 100k
G
ai
n
−
dB
f − Frequency − Hz
2.5
0
−2.5
7.5
10
−7.5
−5
180°
90°
0°
−90°
−180°
1M
Ph
as
e
RL = 8 Ω
AV = 6 dB
BTL
Gain
Phase
−10
20
10 100 1k 10k 100k
G
ai
n
−
dB
f − Frequency − Hz
15
10
5
25
30
−5
0
180°
90°
0°
−90°
−180°
1M
RL = 8 Ω
AV = 15.6 dB
BTL
Gain
Phase
Ph
as
e
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
CLOSED-LOOP RESPONSE
Figure 28.
CLOSED-LOOP RESPONSE
Figure 29.
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−10
20
10 100 1k 10k 100k
G
ai
n
−
dB
f − Frequency − Hz
15
10
5
25
30
−5
0
180°
90°
0°
−90°
−180°
1M
RL = 8 Ω
AV = 21.6 dB
BTL
Gain
Phase
Ph
as
e
2
1.5
0
0 8 16 24 32 40
2.5
3
3.5
48 56 64
RL − Load Resistance − Ω
AV = 6 dB
BTL
−
O
ut
pu
t P
ow
er
−
W
P O
1% THD+N
10% THD+N
1
0.5
750
0
0 8 16 24 32 40
1000
1250
1500
48 56 64
RL − Load Resistance − Ω
AV = 4.1 dB
SE
−
O
ut
pu
t P
ow
er
−
m
W
P O
1% THD+N
10% THD+N
500
250
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
CLOSED-LOOP RESPONSE
Figure 30.
OUTPUT POWER OUTPUT POWER
vs vs
LOAD RESISTANCE LOAD RESISTANCE
Figure 31. Figure 32.
14
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0.6
0.4
0.2
0
0 1
−
Po
w
er
D
is
si
pa
tio
n
−
W
1
1.2
1.4
1.5 2.5
0.8
PO − Output Power − W
P D
4 Ω
8 Ω
f = 1 kHz
BTL
Each Channel
3 Ω1.6
1.8
0.5 2
0.1
0.05
0
0 0.2
−
Po
w
er
D
is
si
pa
tio
n
−
W
0.2
0.25
0.3
0.3 0.8
0.15
PO − Output Power − W
P D
8 Ω
32 Ω f = 1 kHz
SE
Each Channel
4 Ω
0.35
0.4
0.1 0.70.4 0.5 0.6
1
0
−40 0
−
Po
w
er
D
is
si
pa
tio
n
−
W
3
4
5
20 160
2
TA − Ambient Temperature − °C
P D
6
7
−20 10040 60 80 120 140
ΘJA3
ΘJA1,2
ΘJA4 ΘJA1 = 45.9°C/W
ΘJA2 = 45.2°C/W
ΘJA3 = 31.2°C/W
ΘJA4 = 18.6°C/W
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
POWER DISSIPATION POWER DISSIPATION
vs vs
OUTPUT POWER OUTPUT POWER
Figure 33. Figure 34.
POWER DISSIPATION
vs
AMBIENT TEMPERATURE
Figure 35.
15
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THERMAL INFORMATION
DIE
Side View (a)
End View (b)
Bottom View (c)
DIE
Thermal
Pad
TPA0312
SLOS335A–DECEMBER 2000–REVISED OCTOBER 2004
The thermally enhanced PWP package is based on the 24-pin TSSOP, but includes a thermal pad (see Figure
36) to provide an effective thermal contact between the IC and the PWB.
Traditionally, surface mount and power have been mutually exclusive terms. A variety of scaled-down
TO-220-type packages have leads formed as gull wings to make them applicable for surface-mount applications.
These packages, however, have only two shortcomings: they do not address the low profile (< 2 mm)
requirements of many of today's advanced systems, and they do not offer a terminal-count high enough to
accommodate increasing integration. On the other hand, traditional low-power, surface-mount packages require
power-dissipation derating that severely limits the usable range of many high-performance analog circuits.
The PowerPAD™ package (thermally enhanced TSSOP) combines fine-pitch, surface-mount technology with
thermal performance comparable to much larger power packages.
The PowerPAD™ package is designed to optimize the heat transfer to the PWB. Because of the small size and
limited mass of a TSSOP package, thermal enhancement is achieved by improving the thermal conduction paths
that remove heat from the component. The thermal pad is formed using a patented lead-frame design and
manufacturing technique to provide a direct connection to the heat-generating IC. When this pad is soldered or
otherwise thermally coupled to an external heat dissipator, high power dissipation in the ultrathin, fine-pitch,
sur
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