可控硅光耦MOC3061-3062-3063英文手册

����� ��� ����� ���� ������������� ����� ��� �� ������ (600 Volts Peak) The MOC3061, MOC3062 and MOC3063 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors performing the functions of Zero Voltage Crossing bilateral triac drivers. They are designed for use with a triac in the interface of logic systems to equipment powered from 115/240 Vac lines, such as solid–state relays, industrial controls, motors, solenoids and consumer appliances, etc. • Simplifies Logic Control of 115/240 Vac Power • Zero Voltage Crossing • dv/dt of 1500 V/µs Typical, 600 V/µs Guaranteed • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Recommended for 115/240 Vac(rms) Applications: • Solenoid/Valve Controls • Temperature Controls • Lighting Controls • E.M. Contactors • Static Power Switches • AC Motor Starters • AC Motor Drives • Solid State Relays MAXIMUM RATINGS Rating Symbol Value Unit INFRARED EMITTING DIODE Reverse Voltage VR 6 Volts Forward Current — Continuous IF 60 mA Total Power Dissipation @ TA = 25°C Negligible Power in Output Driver Derate above 25°C PD 120 1.41 mW mW/°C OUTPUT DRIVER Off–State Output Terminal Voltage VDRM 600 Volts Peak Repetitive Surge Current (PW = 100 µs, 120 pps) ITSM 1 A Total Power Dissipation @ TA = 25°C Derate above 25°C PD 150 1.76 mW mW/°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 Second Duration) VISO 7500 Vac(pk) Total Power Dissipation @ TA = 25°C Derate above 25°C PD 250 2.94 mW mW/°C Junction Temperature Range TJ –40 to +100 °C Ambient Operating Temperature Range TA –40 to +85 °C Storage Temperature Range Tstg –40 to +150 °C Soldering Temperature (10 s) TL 260 °C 1. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. GlobalOptoisolator �� ���� �� ���� �� ���� COUPLER SCHEMATIC STANDARD THRU HOLE 1. ANODE 2. CATHODE 3. NC 4. MAIN TERMINAL 5. SUBSTRATE DO NOT CONNECT 6. MAIN TERMINAL 1 2 3 6 5 4 ZERO CROSSING CIRCUIT 6 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit INPUT LED Reverse Leakage Current (VR = 6 V) IR — 0.05 100 µA Forward Voltage (IF = 30 mA) VF — 1.3 1.5 Volts OUTPUT DETECTOR (IF = 0) Leakage with LED Off, Either Direction (Rated VDRM(1)) IDRM1 — 60 500 nA Critical Rate of Rise of Off–State Voltage(3) dv/dt 600 1500 — V/µs COUPLED LED Trigger Current, Current Required to Latch Output (Main Terminal Voltage = 3 V(2)) MOC3061 MOC3062 MOC3063 IFT — — — — — — 15 10 5 mA Peak On–State Voltage, Either Direction (ITM = 100 mA, IF = Rated IFT) VTM — 1.8 3 Volts Holding Current, Either Direction IH — 250 — µA Inhibit Voltage (MT1–MT2 Voltage above which device will not trigger.) (IF = Rated IFT) VINH — 5 20 Volts Leakage in Inhibited State (IF = Rated IFT, Rated VDRM, Off State) IDRM2 — — 500 µA Isolation Voltage (f = 60 Hz, t = 1 sec) VISO 7500 — — Vac(pk) 1. Test voltage must be applied within dv/dt rating. 2. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max 2. IFT (15 mA for MOC3061, 10 mA for MOC3062, 5 mA for MOC3063) and absolute max IF (60 mA). 3. This is static dv/dt. See Figure 7 for test circuit. Commutating dv/dt is a function of the load–driving thyristor(s) only. Figure 1. On–State Characteristics –3 VTM, ON–STATE VOLTAGE (VOLTS) I –400 0 +400 +800 –2 –1 0 1 2 3 TM , ON –S TA TE C UR RE NT (m A) –600 –800 –200 +200 +600 4–4 0.7 Figure 2. Inhibit Voltage versus Temperature –40 TA, AMBIENT TEMPERATURE (°C) 0.8 1.1 1.3 –20 0 20 40 60 80 , NO RM AL IZE D 100 0.9 1 1.2 1.4 1.5 5 0.6 0.5 V I NH NORMALIZED TO TA = 25°C OUTPUT PULSE WIDTH – 80 µs IF = 30 mA f = 60 Hz TA = 25°C TYPICAL CHARACTERISTICS TA = 25°C MOC3061, MOC3062, MOC3063 5 1 PWin, LED TRIGGER PULSE WIDTH (µs) 10 15 20 25 2 5 2010 50 0F TI , NO RM AL IZE D LE D TR IG GE R CU RR EN T NORMALIZED TO: PWin � 100 µs TA, AMBIENT TEMPERATURE (°C) –40 +400 Vdc PULSE INPUT MERCURY WETTED RELAY RTEST CTEST R = 10 kΩ X100 SCOPE PROBED.U.T. APPLIED VOLTAGE WAVEFORM 252 V 0 VOLTS �RC Vmax = 400 V dv�dt � 0.63 Vmax �RC � 378 �RC 1. The mercury wetted relay provides a high speed repeated pulse to the D.U.T. 2. 100x scope probes are used, to allow high speeds and voltages. 3. The worst–case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then removing the current. The variable RTEST allows the dv/dt to be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. �RC is measured at this point and recorded. 5 –40 TA, AMBIENT TEMPERATURE (°C) I –20 0 20 40 60 80 100 10 20 50 100 200 500 DR M1 , PE AK B LO CK IN G CU RR EN T ( nA ) 0.6 –40 TA, AMBIENT TEMPERATURE (°C) I IF = RATED IFT 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 –20 0 20 40 60 80 100 DR M2 , NO RM AL IZE D I FT , NO RM AL IZE D 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 NORMALIZED TO TA = 25°C –20 0 20 40 60 80 100 IF = 0 Figure 3. Leakage with LED Off versus Temperature Figure 4. IDRM2, Leakage in Inhibit State versus Temperature Figure 5. Trigger Current versus Temperature Figure 6. LED Current Required to Trigger versus LED Pulse Width Figure 7. Static dv/dt Test Circuit 100 MOC3061, MOC3062, MOC3063 Rin 1 2 6 4 360 Ω MOC3061–63 3 5 VCC NOTE: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. 360 39 0.01 240 Vac HOT NEUTRALLOAD Typical circuit for use when hot line switching is required. In this circuit the “hot” side of the line is switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or hot line. Rin is calculated so that IF is equal to the rated IFT of the part, 15 mA for the MOC3061, 10 mA for the MOC3062, and 5 mA for the MOC3063. The 39 ohm resistor and 0.01 µF capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load used. Rin R1 2 6 43 5 VCC R2 LOAD 360 Ω D1 1 SCR SCR D2 240 Vac Suggested method of firing two, back–to–back SCR’s, with a Motorola triac driver. Diodes can be 1N4001; resis- tors, R1 and R2, are optional 330 ohms. Figure 8. Hot–Line Switching Application Circuit Figure 9. Inverse–Parallel SCR Driver Circuit MOC3061–63 MOC3061, MOC3062, MOC3063 PACKAGE DIMENSIONS THRU HOLE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 6 4 1 3 –A– –B– SEATING PLANE –T– 4 PLF K C N G 6 PLD 6 PLE MAM0.13 (0.005) B MT L M 6 PLJ MBM0.13 (0.005) A MT DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.320 0.350 8.13 8.89 B 0.240 0.260 6.10 6.60 C 0.115 0.200 2.93 5.08 D 0.016 0.020 0.41 0.50 E 0.040 0.070 1.02 1.77 F 0.010 0.014 0.25 0.36 G 0.100 BSC 2.54 BSC J 0.008 0.012 0.21 0.30 K 0.100 0.150 2.54 3.81 L 0.300 BSC 7.62 BSC M 0 15 0 15 N 0.015 0.100 0.38 2.54 � � � � STYLE 6: PIN 1. ANODE 2. CATHODE 3. NC 4. MAIN TERMINAL 5. SUBSTRATE 6. MAIN TERMINAL SURFACE MOUNT –A– –B– � SEATING PLANE –T– J K L 6 PL MBM0.13 (0.005) A MT C D 6 PL MAM0.13 (0.005) B MT H G E 6 PL F 4 PL 31 46 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.320 0.350 8.13 8.89 B 0.240 0.260 6.10 6.60 C 0.115 0.200 2.93 5.08 D 0.016 0.020 0.41 0.50 E 0.040 0.070 1.02 1.77 F 0.010 0.014 0.25 0.36 G 0.100 BSC 2.54 BSC H 0.020 0.025 0.51 0.63 J 0.008 0.012 0.20 0.30 K 0.006 0.035 0.16 0.88 L 0.320 BSC 8.13 BSC S 0.332 0.390 8.43 9.90 MOC3061, MOC3062, MOC3063 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 0.4" LEAD SPACING 6 4 1 3 –A– –B– N C KG F 4 PL SEATING D 6 PL E 6 PL PLANE –T– MAM0.13 (0.005) B MT L J DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.320 0.350 8.13 8.89 B 0.240 0.260 6.10 6.60 C 0.115 0.200 2.93 5.08 D 0.016 0.020 0.41 0.50 E 0.040 0.070 1.02 1.77 F 0.010 0.014 0.25 0.36 G 0.100 BSC 2.54 BSC J 0.008 0.012 0.21 0.30 K 0.100 0.150 2.54 3.81 L 0.400 0.425 10.16 10.80 N 0.015 0.040 0.38 1.02 MOC3061, MOC3062, MOC3063 LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. www.fairchildsemi.com © 2000 Fairchild Semiconductor Corporation