IRFP21N60L中文资料

IRFP21N60L中文资料IRFP21N60LSMPSMOSFETHEXFET®PowerMOSFETFeaturesandBenefits•SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications.•LowerGatechargeresultsinsimplerdriverequirements.•Enhanceddv/dtcapabilitiesofferimprovedruggedness.•HigherGatevoltagethresholdoffersimprovednoiseimmunity.TO-247AC10/19/04www.irf.com1Applications•ZeroVoltageSwitchingSMPS•TelecomandServerPowerSupplies•UninterruptiblePowerSupplies•MotorControlapplicationsPD-94503AIRFP21N60L2www.irf.comNotes:Repetitiverating;pulsewidthlimitedbymax.junctiontemperature.(SeeFig.12)StartingTJ=25°C,L=1.9mH,RG=25Ω,IAS=21A.(SeeFigure14a)ISD≤21A,di/dt≤788A/µs,VDD≤V(BR)DSS,TJ≤150°C.Pulsewidth≤300µs;dutycycle≤2%.Cosseff.isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%VDSS.Cosseff.(ER)isafixedcapacitancethatstoresthesameenergyasCosswhileVDSisrisingfrom0to80%VDSS.RθismeasuredatTJapproximately90°CStatic@T=25°C(unlessotherwisespecified)IRFP21N60Lwww.irf.com3Fig4.NormalizedOn-Resistancevs.TemperatureFig2.TypicalOutputCharacteristicsFig1.TypicalOutputCharacteristicsFig3.TypicalTransferCharacteristicsVDS,Drain-to-SourceVoltage(V)I,Drain-to-SourceCurrent(A)VDS,Drain-to-SourceVoltage(V)ID,Drain-to-SourceCurrent(A)46810121416VGS,Gate-to-SourceVoltage(V)0.010.11101001000ID,Drain-to-SourceCurrent(Α)-60-40-2020406080100120140160TJ,JunctionTemperature(°C)0.00.51.01.52.02.53.0RDS(on),Drain-to-SourceOnResistance(Normalized)IRFP21N60L4www.irf.comFig5.TypicalCapacitancevs.Drain-to-SourceVoltageFig8.TypicalSource-DrainDiodeForwardVoltageFig7.TypicalGateChargevs.Gate-to-SourceVoltageFig6.Typ.OutputCapacitanceStoredEnergyvs.VDS1101001000VDS,Drain-to-SourceVoltage(V)10100100010000100000C,Capacitance(pF)100200300400500600700VDS,Drain-to-SourceVoltage(V)0510152025Energy(µJ)20406080100120QGTotalGateCharge(nC)0.02.04.06.08.010.012.0VGS,Gate-to-SourceVoltage(V)0.20.40.60.81.01.21.41.6VSD,Source-to-DrainVoltage(V)0.101.0010.00100.00ISD,ReverseDrainCurrent(A)IRFP21N60Lwww.irf.com5Fig9.MaximumSafeOperatingAreaFig10.MaximumDrainCurrentvs.CaseTemperatureVDDFig11a.SwitchingTimeTestCircuitVDSVd(on)rd(off)fFig11b.SwitchingTimeWaveforms110100100010000VDS,Drain-to-SourceVoltage(V)0.11101001000ID,Drain-to-SourceCurrent(A)255075100125150TC,CaseTemperature(°C)0510152025ID,DrainCurrent(A)IRFP21N60L6www.irf.comFig12.MaximumEffectiveTransientThermalImpedance,Junction-to-CaseFig13.ThresholdVoltagevs.Temperature-75-50-25255075100125150TJ,Temperature(°C)1.02.03.04.05.0VGS(th)GatethresholdVoltage(V)IRFP21N60Lwww.irf.com7Fig14a.MaximumAvalancheEnergyvs.DrainCurrentFig14c.UnclampedInductiveWaveformsDSCurrentSamplingResistorsFig15a.GateChargeTestCircuitFig15b.BasicGateChargeWaveformFig14b.UnclampedInductiveTestCircuitIVDDVVGSV255075100125150StartingTJ,JunctionTemperature(°C)0700800EAS,SinglePulseAvalancheEnergy(mJ)IRFP21N60L8www.irf.comFig16.ForN-ChannelHEXFET®PowerMOSFETs*VGS=5VforLogicLevelDevicesPeakDiodeRecoverydv/dtTestCircuitVDDIRFP21N60Lwww.irf.com9IRWORLDHEADQUARTERS:233KansasSt.,ElSegundo,California90245,USATel:(310)252-7105TACFax:(310)252-7903Visitusatwww.irf.comforsalescontactinformation.10/04Dimensionsareshowninmillimeters(inches)