半导体封装制程与设备材料知识介绍

半导体封装制程与设备材料知识简介PrepareBy：WilliamGuo2007.11Update半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试封装前段（B/G-MOLD）－封装后段（MARK-PLANT）－测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。半导体制程封裝型式(PACKAGE)封裝型式封裝型式封裝型式封裝型式封裝型式AssemblyMainProcessDieCure(Optional)DieBondDieSawPlasmaCardAsyMemoryTestCleanerCardTestPackingforOutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUVCure(Optional)LasermarkPostMoldCureMoldingLaserCutPackageSawWireBondSMT(Optional)半导体设备供应商介绍-前道部分半导体设备供应商介绍-前道部分常用术语介绍SOP-StandardOperationProcedure 标准 excel标准偏差excel标准偏差函数exl标准差函数国标检验抽样标准表免费下载红头文件格式标准下载 操作手册WI–WorkingInstruction作业指导 书 关于书的成语关于读书的排比句社区图书漂流公约怎么写关于读书的小报汉书pdf PM–PreventiveMaintenance预防性维护FMEA-FailureModeEffectAnalysis失效模式影响分析SPC-StatisticalProcessControl统计制程控制DOE-DesignOfExperiment 工程 路基工程安全技术交底工程项目施工成本控制工程量增项单年度零星工程技术标正投影法基本原理 试验设计IQC/OQC-Incoming/OutingQualityControl来料/出货质量检验MTBA/MTBF-MeanTimebetweenassist/Failure平均无故障工作时间CPK-品质参数UPH-UnitsPerHour每小时产出QC7Tools(QualityControl品管七工具)OCAP(OutofControlActionPlan异常改善计划)8D(问题解决八大步骤)ECNEngineeringChangeNotice(制程变更 通知 关于发布提成方案的通知关于xx通知关于成立公司筹建组的通知关于红头文件的使用公开通知关于计发全勤奖的通知 )ISO9001，14001–质量管理体系前道ＦＯＬ后道EOLWireBond引线键合Mold模塑LaserMark激光印字LaserCutting激光切割EVI产品目检SanDiskAssemblyProcessFlowSanDisk封装 工艺 钢结构制作工艺流程车尿素生产工艺流程自动玻璃钢生产工艺2工艺纪律检查制度q345焊接工艺规程 流程DiePrepare芯片预处理ＤieAttach芯片粘贴WaferIQC来料检验PlasmaClean清洗PlasmaClean清洗SawSingulation切割成型SMT表面贴装PMC模塑后烘烤SMT（表面贴装）---包括锡膏印刷(Solderpasteprinting),置件(Chipshooting),回流焊(Reflow),DI水清洗(DIwatercleaning),自动光学检查(Automaticopticalinspection),使贴片零件牢固焊接在substrate上DiePrepare(芯片预处理)ToGrindthewafertotargetthicknessthenseparatetosinglechip---包括来片目检(WaferIncoming),贴膜(WaferTape),磨片(BackGrind),剥膜(Detape),贴片(WaferMount),切割(WaferSaw)等系列工序,使芯片达到工艺所要求的形状,厚度和尺寸,并经过芯片目检(DVI)检测出所有由于芯片生产,分类或处理不当造成的废品.WafertapeBackGrindWaferDetapeWaferSawInlineGrinding&Polish--AccretechPG300RMTransferKeyTechnology:1.LowThicknessVariation:+/_1.5Micron2.GoodRoughness:+/-0.2Micron3.ThinWaferCapacity:Upto50Micron4.All-In-Onesolution,ZeroHandleRisk2.Grinding相关材料ATAPE麦拉BGrinding砂轮CWAFERCASSETTLE工艺对TAPE麦拉的要求：1。MOUNTNodelaminationSTRONG2。SAWADHESIONNodieflyingoffNodiecrack工艺对麦拉的要求：3。EXPANDINGTAPEDiedistanceELONGATIONUniformity4。PICKINGUPWEAKADHESIONNocontamination3.Grinding辅助设备AWaferThicknessMeasurement厚度测量仪一般有接触式和非接触式光学测量仪两种；BWaferroughnessMeasurement粗糙度测量仪主要为光学反射式粗糙度测量方式；4.Grinding配套设备ATaping贴膜机BDetaping揭膜机CWaferMounter贴膜机WaferTaping--NittoDR300IICutTapeTapingAlignmentTransferTransferBackKeyTechnology:1.HighTransferAccuracy:+/_2Micron2.HighCutAccuracy:+/-0.2mm3.HighThroughput:50pcswafer/Hour4.ZeroVoidandZeroWaferBrokenDetapingl  Wafermount Waferframe晶圓切割(Dicing)Dicing设备:ADISCO6361系列BACCERTECH东京精密AW-300TMainSectionsIntroductionCuttingArea:Spindles(Blade,Flange,CarbonBrush),CuttingTable,Axes(X,Y1,Y2,Z1,Z2,Theta),OPCLoaderUnits:Spinner,Elevator,Cassette,RotationArmBladeClose-ViewBladeCuttingWaterNozzleCoolingWaterNozzleDieSawing–Disco6361KeyTechnology:1.Twin-SpindleStructure.2.X-axisspeed:upto600mm/s.3.SpindleRotarySpeed:Upto45000RPM.4.CuttingSpeed:Upto80mm/s.5.Z-axisrepeatability:1um.6.PositioningAccuracy:3um.RearFrontAFewConceptsBBD(BladeBrokenDetector)Cutter-set:ContactandOpticalPrecisionInspectionUp-CutandDown-CutCut-inandCut-remain晶圓切割(Dicing)Dicing相关工艺ADieChipping芯片崩角BDieCorrosive芯片腐蚀CDieFlying芯片飞片Wmax,Wmin,Lmax,DDY,DY規格—DY<0.008mmWmax<0.070mmWmin<0.8*刀厚Lmax<0.035       切割時之轉速予切速:a.      轉速:指的是切割刀自身的轉速b.     切速:指的是Wafer移動速度.主軸轉速:S1230:30000~45000RPMS1440:30000~45000RPM27HEED:35000~45000RPM27HCCD:35000~45000RPM27HDDC:35000~45000RPM晶圓切割(Dicing)3.Dicing相关材料ATapeBSawBLADE切割刀CDI去离子水、RO纯水切割刀的規格規格就包括刀刃長度、刀刃寬度、鑽石顆粒大小、濃度及Nickelbondhardness軟硬度的選擇P4Sawblade对製程的影響ProperCutDepthIntoTape(切入膠膜的理想深度)分析:理想的切割深度可防止1.背崩之發生。2.切割街区的DDY理想的切割深度須切入膠膜(Tape)1/3厚度。P11切割刀的影響DiamondGritSize(鑽石顆粒大小)分析:小顆粒之鑽石1.切割品質較好。2.切割速度不宜太快。3.刀子磨耗較大。大顆粒之鑽石1.刀子磨耗量小。2.切割速度可較快。3.負載電流較小。P15TAPE粘度对SAW製程的影響MountingTape(膠膜黏力)分析:使用較黏膠膜可獲得1.沒有飛Die。2.較好的切割品質。潛在風險DieAttachprocesspickupdie影響。P10晶圓切割(Dicing)4.Dicing辅助设备ACO2Bubbler二氧化碳发泡机BDIWater电阻率监测仪CDiamonflow发生器DUV照射机DieAttach(芯片粘贴)ToattachsingledietoSMTedsubstrate---把芯片粘贴到已经过表面贴装(SMT)和预烘烤(Pre-bake)后的基片上,或芯片粘贴到芯片上,并经过芯片粘贴后烘烤(DieAttachCure)固化粘结剂.Passivechip(capacitor)Substrate上片(DieBond)DieBond设备AHITACHIDB700BESEC2007/2008系列CASM829/889/898系列DieAttach–HitachiDB700KeyTechnology:1.Bondingspeed:30ms/die;2.BondingAccuracyX/Y:25um;3.AngleAccuracy:0.5degree;4.ThinDiePickUpSolution:Upto2mils(Electromagnetic&Multi-StepMode);5.Integrate&InlineModule:XMemory+1controller;6.Multi-DiestackDieCapacity:Upto8layersonce;上片(DieBond)2.DieBond相关工艺上片(DieBond)3.DieBond相关材料ASubstrate/LeadframeBDieAttachFilmCWaferafterSawDMagazine弹夹SubstrateBasicStructure:SubstrateBasicInformationCore：玻璃纤维+树脂，0.1-0.4mm镀铜层：25um+/-5um镀镍层：5.0-12.5um镀金层：0.50-1.10umSolderMask：25um+/-5um总厚度：0.10-0.56mm發料烘烤線路形成(內層)AOI自動光學檢測壓合4layer2layer蝕薄銅綠漆線路形成塞孔鍍銅Deburr鑽孔鍍Ni/Au包裝終檢O/S電測成型AOI自動光學檢測出貨BGA基板製造流程(option)上片(DieBond)4.DieBond辅助设备A银浆搅拌机利用公转自转离心力原理脱泡及混合；主要参数有：MIXING/DEFORMINGREVOLUTIONSPEED外加计时器；公转用于去泡；自转用于混合；BCuringOven无氧化烤箱主要控制要素：N2流量；排气量；profile温度曲线；每箱摆放Magazine数量；CWafermapping应用WireBond(引线键合)DietoPackageInterconnectsHowadieisconnectedtothepackageorboard.---用金线将芯片上的引线孔和基片上的引脚连接，使芯片能与外部电路相连。在引线键合前需要经过等离子清洗(Pre-BondPlasmaClean)以保证键合质量,在引线键合后需要经过内部目检(IVI),检测出所有芯片预处理,芯片粘贴和引线键合产生的废品.WireBond–K&SUltraKeyTechnology:1.Diepadopening(Min.):45um.2.Diepadspitch(Min.):60µm.3.SubstrateLeadwidth&Pitch(Min.):40µm&25µm.4.Multi-LoopSelectioncoverallPackage.5.StackdiereverseBondingtoDecreaseTotalpackageThickness.DiePadSubstrateLeadGoldWireCapillaryUltrasonicPowerHeaterBondForce焊线(WireBond)1.WireBond相关工艺PadOpen&BondPadPitchBallSizeBallThicknessLoopheightWirePullBallshortCraterTest焊线(WireBond)2.WireBond相关材料SubstratewithdieCapillaryGoldWireTIP..……PadPitchPadpitchx1.3=TIPHole..…..WireDiameterWirediameter+0.3~0.5=HCD………Padsize/open/1stBallCD+0.4~0.6=1stBondBallsizeFA&OR….Padpitch(um)FA>1000,4~90/1004,8,11<9011,15ICtype……looptypeCapillaryGoldWireGoldWireManufacturer(Nippon,SUMTOMO,TANAKA….)GoldWireData(WireDiameter,Type,EL,TS)焊线(WireBond)3.WireBond辅助设备AMicroscope用于测loopheightBWirePull拉力计（DAGE4000）CBallShear球剪切力计DPlasma微波/等离子清洗计BallSizeBallThickness單位:um，Mil量測倍率:50XBallThickness計算公式60umBPP≧1/2WD=50%60umBPP≦1/2WD=40%~50%BallSizeBallSize&BallThicknessLoopHeight單位:um，Mil量測倍率:20XLoopHeight線長WirePull1LiftedBond(Rejected)2Breakatneck(Referwire-pullspec)3Breakatwire(Referwire-pullspec)4Breakatstitch(Referstitch-pullspec)5Liftedweld(Rejected)BallShear單位:gramorg/mil²BallShear計算公式Intermetallic（IMC有75%的共晶,ShearStrength標準為＞6.0g/mil²。SHEARSTRENGTH＝BallShear/Area(g/mil²)BallShear=x;BallSize=y;Area=π(y/2)²x/π(y/2)²=zg/mil²等离子工艺PlasmaProcess气相---固相表面相互作用GasPhase-SolidPhaseInteractionPhysicalandChemical分子级污染物去除MolecularLevelRemovalofContaminants30to300Angstroms可去除污染物包括ContaminantsRemoved难去除污染物包括DifficultContaminantsFingerPrintsFluxGrossContaminantsOxidesEpoxySolderMaskOrganicResiduePhotoresistMetalSalts(NickelHydroxide)PlasmaClean–MarchAP1000KeyTechnology:1.ArgonCondition,Nooxidation.2.VacuumPumpdustcollector.3.CleanLevel:blobTestAngle<8Degree.PlasmaPCBSubstrateDie+++++++++++Electrode+ArWellCleanedwithPlasma<8oChipArArNoClean(OrganicContamination)WellCleanedwithPlasma>80o<8oOrganicContaminationvsContactAngleWaterDropChipChipMold(模塑)Tomoldstripwithplasticcompoundthenprotectthechiptopreventfromdamaged--塑封元件的线路，以保护元件免受外力损坏，同时加强元件的物理特性,便于使用.在模塑前要经过等离子清洗(Pre-MoldPlasmaClean),以确保模塑质量.在模塑后要经过模塑后固化(PostMoldCure),以固化模塑料.塑封(Molding)Molding设备ATOWAYPS&Y-SeriesBASAOMEGA3.8机器上指示灯的说明：1、绿灯——机器处于正常工作状态；2、黄灯——机器在自动运行过程中出现了报警提示，但机器不会立即停机；3、红灯——机器在自动运行过程中出现了故障，会立即停机，需要马上处理。机器结构了解——正面机器结构了解——背面CULLBOX——用来装切下来的料饼；OUTMG——用来装封装好的L/F；配电柜——用来安装整个模机的电源和PLC，以及伺服电机的SERVOPACK。塑封(Molding)2.Molding相关材料ACompound塑封胶BMoldChase塑封模具模具介绍：模具是由硬而脆的钢材加工而成的。所有的清洁模具的工具必须为铜制品，以免对模具表面产生损伤。严禁使用钨钢笔、cull等非铜材料硬质工具清洁模具。塑封(Molding)3.Molding辅助设备AX-RAYX射线照射机---用于Mold后对于产品的检查BPlasma清洗机--作用原理和WB前的相同；Thanksforwatchingandlistening