NTE3040(光耦）

NTE3040 Optoisolator NPN Transistor Output Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled with a silicon phototransistor. Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Infrared Emitting Diode Power Dissipation, PD 200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate above 25°C ambient 2.6mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Current (Continuous), IC 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Current (Peak), IC 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (Pulse Width 1µsec, 300pps) Reverse Voltage, VR 3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Phototransistor Power Dissipation, PD 200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate above 25°C ambient 2.6mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector to Emitter Voltage, VCEO 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector to Base Voltage, VCBO 70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter to Collector Voltage, VECO 7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current (Continuous), IC 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Device Storage Temperature, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Temperature, Topr –55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Soldering Temperature (10 seconds) +260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Surge Isolation Voltage (Input to Output) (Peak) 1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (RMS) 1060V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Infrared Emitting Diode Forward Voltage VF IF = 10mA – 1.1 1.5 V Reverse Current IR VR = 3V – – 10 mA Capacitance CJ V = 0, f = 1MHZ – 50 – pf Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Phototransistor Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IF = 0 30 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IF = 0 70 – – V Emitter–Collector Breakdown Voltage V(BR)ECO IE = 100µA, IF = 0 7 – – V Collector Dark Current ICEO VCE = 10V, IF = 0 – 5 50 nA Capacitance CJ VCE = 10V, f = 1MHZ – 2 – pf Coupled Characteristics DC Current Transfer Ratio CTR IF = 10mA, VCE = 10V 6 – – % Collector–Emitter Saturation Voltage VCEO(sat) IF = 60mA, IC = 1.6mA 100 – – V Isolation Resistance R(I–O) V(I–O) = 500VDC 100 – – GΩ Input to Output Capacitance C(I–O) V(I–O) = 0, f = 1MHZ – – 2 pf Switching Speeds tr, tf VCE = 10V, Ω ICE = 2mA – 5 – µs RL = 100Ω ICB = 50µA – 3 – µs .260 (6.6) Max .350 (8.89) Max .350 (8.89) Max .300 (7.62) .200 (5.08) Max .085 (2.16) Max .070 (1.78) Max .100 (2.54) 1 2 3 5 46 Emitter Collector Base1 2 Anode Cathode 3N.C. 6 5 4 Pin Connection Diagram