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纳米电子封装-其它 Index A AAO. See Anodic aluminum oxide ACA. See Anisotropic conductive adhesive ACF. See Anisotropic conductive film Acoustic cavitation, 114, 115 Activated tunneling, 143, 148 Activation energy, 143, 202 A...

纳米电子封装-其它
Index A AAO. See Anodic aluminum oxide ACA. See Anisotropic conductive adhesive ACF. See Anisotropic conductive film Acoustic cavitation, 114, 115 Activated tunneling, 143, 148 Activation energy, 143, 202 Adhesion, 41–46, 69, 71, 79, 80, 83, 125, 126, 197, 203, 214, 224, 225, 249, 252, 288, 384, 423, 453, 469, 470, 499, 509 AFM. See Atomic force microscope Ag-carboxylate, 241, 245 Agglomerate, 128, 199, 254, 380, 430 Agglomeration, 116–118, 198, 216, 239, 250, 254, 290, 423, 430 Aggregation, 216, 240, 258 Air core, 164, 167–174 Alignment, 5, 122, 176, 250, 334, 337, 368, 371, 437, 450, 476–478, 500, 528 Al(OH) 3 . See Bayerite Al 2 O 3 . See Alumina AlOOH. See Boehmite Alumina, 4, 258, 340, Amorphous, 46, 50, 80–84, 147, 151, 168, 180, 183, 325, 327, 372, 397, 447 Anisotropic conductive adhesive (ACA), 189–192, 198–205 Anisotropic conductive film (ACF), 189–192, 198–205 Anisotropy, 167, 168, 174, 176–182, 191 Anodic aluminum oxide (AAO), 204, 443, 444, 446, 449, 451, 452 ANSYS, 17, 24, 301, 305, 387 Antennas, 452 Arc-discharge, 327–331, 334, 341 Architecture, 503, 504, 506–508, 523, 526, 530, 531 Asymmetric film, 144 Atomic force microscope (AFM), 2, 140, 141, 356 Atomistic, 17, 18, 20, 27, 40, 42, 61, 84, 85, 87, 93, 535 Atomization, 112 B Back-end, 62, 67, 68, 74–76, 509, 512, 530 Ball bond, 71, 75, 449 Ball grid array (BGA), 209, 210, 231, 232, 280, 499, 500, 513, 515 Band bending, 359–361, 367 Barium titanate, 3, 124, 125, 127 BaTiO 3 . See Barium titanate Bayerite, 84 BCB. See Benzocyclobutene Benzocyclobutene (BCB), 183 Benzotriazole (BTA), 203 BER. See Bit-error-rate BGA. See Ball grid array Biological sensing, 6 Biomolecular detection, 372 Bit-error-rate (BER), 407–410 Black diamond, 82, 83 Blind vias, 211, 228 Block co-polymer, 204 Boehmite, 84 Boltzmann, 53, 79, 143, 144 Breakdown, 110, 111, 133 BTA. See Benzotriazole Buckling, 71–74 Bucky ball, 345 Buildup, 110, 498, 503 Bumps, 4, 210, 259, 260, 317–321, 389–391, 415, 465, 466, 495, 496, 498, 499, 510, 511 Buried vias, 210, 211, 231 537 Morris_Index.indd 537Morris_Index.indd 537 9/29/2008 8:10:06 PM9/29/2008 8:10:06 PM 538 Index C C4. See Controlled collapse chip connection Cantilever arrays, 445 Capacitor, 3, 121–127, 502, 503, 525, 526 Capillaries, 24, 30, 31, 48, 140, 142, 150, 246, 248, 287, 288, 450, 476, 477 Carbon fibers, 5, 6, 395, 396 Catalyst, 96, 333–341, 385, 386, 390, 397, 399 Catalytic, 326, 332, 334, 346, 447 Cermet, 3, 93, 94, 99, 102, 103, 139, 140, 144, 155 Charging energy, 101, 130, 140, 157, 159, 368 Chemical bonding, 55, 84, 224 Chemical interactions, 80, 85 Chemical vapor deposition (CVD), 5, 96, 289, 325, 334–341, 397, 399, 416, 445, 446 Chirality, 195, 196, 345, 349, 350–352, 353, 371, 372, 416 CIJ. See Continuous ink jet Close-ended CNTs, 332 Coalescence, 94, 98, 99, 140–142 Coefficient of thermal expansion (CTE), 30, 31, 44, 51, 56, 210, 227, 231, 287, 288, 291, 295, 297, 298, 314, 315, 318, 320, 322, 422, 423, 432–434, 466, 467, 481, 486, 497, 510, 512 Coercivity, 164, 168, 176, 177, 179–183 Compliant interconnects, 466–471, 475–477, 481, 510 Compliant wafer level packaging (CWLP), 468 Conductive cooling, 5 Confocal microscope, 2 Contact angle, 95, 418, 425, 426 Continuous ink jet (CIJ), 248–250 Controlled collapse chip connection (C4), 495–499 Convective cooling, 5 Cost, 20, 23, 35, 39, 61, 87, 112, 113, 116, 119, 121, 125, 163, 164, 174, 175, 183, 190, 202, 210, 211, 214, 218, 241, 257, 329, 357, 372, 385, 387, 389, 395, 396, 404, 415, 465–469, 485, 491, 493, 495, 499, 503–509 Coulomb block, 100–102 Coulomb blockade, 2, 101, 129–131, 143, 156, 367, 368 Coulomb staircase, 156, 159 Crack initiation, 65 Crack propagation, 68, 84 Crack tip, 63–65, 68–70 Creep resistance, 4 Cr x (SiO) 1-x, 145, 147, 152, 153, 155–157, 160 Cr x Si 1-x , 148–153 (Cr x Si 1-x ) 1-y N y , 148, 149, 152, 153 CTE. See Coefficient of thermal expansion CTE mismatch, 30, 44, 210, 318, 320, 432–434, 466, 467, 481, 486, 510 Cu 2 O. See Cuprous oxide Cuprous oxide, 42–45 Cure kinetics, 28 Current crowding, 29, 33, 34 Current densities, 33, 497 CVD. See Chemical vapor deposition CWLP. See Compliant wafer level packaging Cyanate ester, 214 D De Broglie, 79 Debye–Scherrer, 94 Decoupling, 124, 502, 503, 524 Delamination, 61–76, 83, 85, 226, 232, 317, 318, 320, 465, 466 Deoxyribonucleic acid (DNA), 442 Dendrite, 202 Dicarboxylic acid, 200, 201, 224 Die lift, 69, 71 Die-attach, 62, 69, 71 Dielectric constant, 3, 82, 100, 122–127, 130, 134, 142, 143, 157, 160, 167, 227, 228, 361, 497, 510, 530 Dielectric loss, 122–124, 126–135, 228 Differential scanning calorimetry (DSC), 222, 382, 417, 423, 424 Diffusion barriers, 203 Diffusion bonding, 452 Discontinuous metal film, 139, 140 Discontinuous metal thin film (DMTF), 93, 94, 102 Dislocation density, 433, 434 Dispenser, 241, 246, 248 Dispersion, 49, 109, 119, 125, 128, 131, 135, 147, 178, 193, 197, 205, 213, 216, 221, 240, 244, 290, 352, 353, 396, 398, 399, 411, 416, 420, 422, 429, 443, 452, 512 Dissipation factor, 124, 130, 134 Dithiol, 200, 201 DMA. See Dynamic mechanical analysis DMTF. See Discontinuous metal thin film DNA sensors, 357 DNA. See Deoxyribonucleic acid DOD. See Drop-on-demand Drop test, 265, 266, 276, 280–284 Drop-on-demand (DOD), 248, 250 DSC. See Differential scanning calorimetry Dynamic mechanical analysis (DMA), 307 Morris_Index.indd 538Morris_Index.indd 538 9/29/2008 8:10:06 PM9/29/2008 8:10:06 PM Index 539 E EAM. See Embedded atom method ECA. See Electrically conductive adhesive Eddy current, 164, 167, 169, 171, 175, 177–180 EDX. See Energy Dispersive X-Ray EELS. See Electron Energy Loss Spectroscopy Elastic modulus, 78, 196, 225, 288, 291, 295, 298, 301, 305, 307, 308, 310, 311, 314, 354, 416, 470, 510 Electrically conductive adhesive (ECA), 3, 4, 189, 212, 213, 221–223, 225 Electro-deposition, 25 Electromagnetic immunity, 407 Electromagnetic interference (EMI), 395, 398, 404, 407, 411, 452 Electromagnetic susceptibility (EMS), 396, 407, 409–411 Electron diffraction, 94, 96, 147, 150 Electron microscopy, 96, 146, 348, 349, 372, 417 Electron tunneling, 2, 3, 7, 101, 102, 130, 140, 368, 369 Electron energy loss spectroscopy (EELS), 180 Electrospinning, 378, 382, 385 Electrospun, 5 Ellipsoid, 94, 101, 380 Embedded atom method (EAM), 17 Embedded passives, 121, 122 EMI. See Electromagnetic interference EMC . See Epoxy molding compound EMS. See Electromagnetic susceptibility End-of-life, 20, 113 Energy dispersive X-ray (EDX), 144, 147, 150, 251, 252, 417, 421 Environmental impact, 112, 113, 116 Environmental stress testing, 232 Environmentally friendly, 190, 485, 494, 495, 497 Epoxy, 5, 41–43, 46, 48–51, 69, 84, 125, 127–132, 196, 203, 204, 214, 215, 219, 222, 223, 226, 245, 288, 290, 291, 295, 299, 300, 314, 380, 396 Epoxy molding compound (EMC), 42–49, 402, 521 Exotemplate, 443–447 Eye diagram, 407–409 F Faraday, M., 103 Far-field, 396, 401, 406 Fatigue failure, 317, 320, 466 Fatigue life, 30, 415 FCOB. See Flip-chip on board Ferrite, 4, 172, 173, 183, 402 Ferromagnetic resonance (FMR), 167 Ferromagnetism, 140 FE-SEM. See Field emission SEM Field emission, 346, 356, 449 Field emission SEM (FE-SEM), 275, 417, 419, 436 Filler load, 379 Filler shape, 379 Fine pitch, 31, 32, 190–192, 197, 205, 218, 241, 255, 258, 291, 390, 415, 438, 452, 468, 485 Finite difference, 79 Finite element, 20, 23, 32, 39, 42, 61, 64–66, 86, 87, 291, 292, 295, 298, 301, 321, 472 First level interconnect, 486, 495 Flexible printed circuits (FPC), 259 Flip chip, 6, 7, 30–34, 209, 210, 213, 227, 231, 245, 287, 288, 317–319, 322, 389–391, 415, 442, 451, 452, 491, 493, 495, 497–500, 505, 510, 513 Flip-chips on board (FCOB), 465 Fluidized bed reactor, 335, 339, 340 FMR. See Ferromagnetic resonance Form factor, 491, 507, 512–515 FormFactor Inc., 467 Four point probe, 243–244, 417 Four point probe bending, 64, 69 FPC. See Flexible printed circuits Fracture, 5, 24, 63–65, 67–69, 85, 87, 197, 229, 245, 266, 279, 280, 284, 431, 434–437, 439, 497, 510 Fullerene, 195, 325–327, 329, 332, 333, 345, 350, 397 G Gage factor, 102 Galvanic corrosion, 6 Galvanic deposition, 446 Giant magnetic resistance (GMR), 453 Gibbs free energy, 115 Glass transition temperature, 23, 41, 50, 51, 307, 310 Glow discharge, 329, 330 GMR. See Giant magnetic resistance Grain boundaries, 4, 90, 140, 176, 429, 445 Grain boundary scattering, 140 Grain growth, 4, 432, 448 Morris_Index.indd 539Morris_Index.indd 539 9/29/2008 8:10:06 PM9/29/2008 8:10:06 PM 540 Index Granular, 99, 140, 142, 143, 148, 156, 157, 159, 179, 218 Graphene, 332, 349–351, 364 Griffith flaws, 433 H Hall-Pecht, 99 Hall-Petch mechanism, 432 Hardness, 99, 212, 266, 276, 278, 279, 284, 427 Heat removal, 377, 378, 382, 385, 389 Heat transfer coefficient, 377, 380 Helix interconnect, 468 High-k, 122, 124–128, 131, 132, 134, 491, 525, 528 Hopping, 2, 128, 143, 155, 425 Hydrophilic, 117, 256, 290 Hydrophobic, 116, 117, 202, 256, 290, 380 Hygro-swelling, 69 Hygro-thermal-mechanical, 30, 205 I ICA. See Isotropic conductive adhesive IHS. See Integrated heat spreader IMC. See Intermetallic compound Impedance control, 503, 505 Indium tin oxide (ITO), 191 Ink-jet printing, 4, 241, 245–250, 258, 259 Integrated heat spreader (IHS), 507 Intermetallic compound (IMC), 4, 33, 265 International Technology Roadmap for Semiconductors (ITRS), 465 Intrinsic stresses, 469–471, 482, 484 Ion milling, 168, 175 Islands, 94, 95, 101, 102, 140, 142–144, 147, 148, 150, 151, 153, 156, 157, 159, 368 Isotropic conductive adhesive (ICA), 3, 6, 99, 214, 390 ITO. See Indium tin oxide ITRS. See International Technology Roadmap for Semiconductors J Jitter, 409 K Kelvin models, 300 Kirkendall, 4, 265 L Laminar flow, 381 Laminate, 80, 121, 195, 211–213, 221, 225, 226, 229, 231, 233, 317, 318, 320 Lamination, 211, 225, 228, 229, 233 Land grid array (LGA), 493, 499 Landau-Lifshitz (LL), 177 Latency, 465 LCP. See Liquid crystal polymer Leakage current, 167, 204 Leakage flux, 167, 171 LGA. See Land grid array Life-cycle, 20, 35 Liftoff, 445, 482 Liquid crystal, 5, 190, 395, 450 Liquid crystal polymer (LCP), 395 LL. See Landau-Lifshitz Loss factor, 128 Loss tangent, 124, 126, 128, 134, 227, 228 Low temperature co-fired ceramics (LTTC), 183 LTTC. See Low temperature co-fired ceramics M M3D®. See Maskless mesoscale material deposition Magnetic core, 164, 167, 169, 171, 172, 174 Magnetostatic, 167, 169, 175, 181, 182 Magnetostriction, 178, 179, 181 Magnetostrictive, 176 Magnetron, 181, 484 Magnetron sputtering, 168, 174, 182, 469, 485 Maleimide, 214 Maskless mesoscale material deposition (M3D®), 249 Maxwell model, 300, 301, 303, 305, 314 Maxwell-Garnett, J. C., 103 MD. See Molecular dynamics Mean free paths, 140 Mechanical interlocking, 77, 79, 80, 85, 87, 88, 224 Melting point depression, 2, 96–98, 252, 448 Metal-induced gap state, 359 Metallic-insulator transition, 95 Methylmethacrylate (MMA), 482 Micro-channels, 5, 382, 385 MicrospringTM, 467, 468 Microstructure, 126, 139, 146, 147, 181, 217, 252, 256, 257, 419–422, 432 Mie, G., 103 Mitigation, 20 MMA. See Methylmethacrylate Morris_Index.indd 540Morris_Index.indd 540 9/29/2008 8:10:06 PM9/29/2008 8:10:06 PM Index 541 Moisture absorption, 30, 69, 512 loading, 69 Molecular dynamics (MD), 2, 17, 27, 28, 34, 35, 39, 43, 50, 52, 61, 77–79, 84, 86, 87, 99 Molecular wires, 200, 201, 442 Monopole antenna, 406, 407 Monte Carlo, 19, 41 Mooney-Rivlin, 24 Moore’s Law, 7, 163, 491, 493–495, 506, 525, 526, 533, 534 MS. See Metal-induced gap state Multi-physics, 15, 17, 20, 33, 35 Multi-scale, 15, 20, 27, 535 N Nanocrystalline, 6, 175, 180 Nanocomposite, 99, 127–132, 134, 135, 178, 183, 205, 222, 358, 416, 423–425, 429, 512 Nano-diamond, 6 Nano-electrode, 6, 7, 204, 453 Nanoelectronics, 6, 7, 85, 450, 517, 518, 520–524, 529–531, 534, 535 Nanograins, 2, 181, 182 Nano-imprinting, 6 Nano-indentation, 448 Nano-interconnect, 6–7, 511 Nanolawn, 442, 444, 447, 451, 453 Nanowires, 96, 192, 204, 205, 212, 217, 441, 443–453, 511 Native oxide, 3, 177, 182 Navier-Stokes, 26, 381, 382 NCA. See Non-conductive adhesive Near-field, 396, 402–410, 445, 452 Negative differential resistance, 362, 367 Negative magnetic permeability, 452 Negative TCR, 142 Neuroprosthetic, 454 Ni-Zn, 172 No-flow, 476, 477 No-flow underfill, 30, 287, 288, 290 Noise, 163, 178, 210, 402, 409, 465, 503 Non-conductive adhesive, 4 No-Pb, 4, 98 N-type CNT, 363, 366 Nucleation, 93, 112, 115, 118, 251, 326, 334, 431, 436 O Oblate spheroids, 103 Oblate absorption, 102 Oblate interconnect, 6, 103, 505, 528 Oblate transceiver, 395, 396, 402, 404–407 Organic monolayers, 200 Ostwald ripening, 98, 451 Oxidation, 42, 54, 84, 109, 118, 172, 180, 182, 205, 218, 267, 271, 289 P Package-on-package (PoP), 513, 514, 527 Particle shape, 3, 94, 103, 289, 379 Passive components, 3, 121, 163, 529 PDF. See Probability distribution function PECVD. See Plasma enhanced chemical vapor deposition PEEK. See Poly ether ether ketone Percolation, 94, 99, 125–128, 135, 140, 142, 143, 151, 180, 181, 189, 193, 194, 196, 213, 217–220, 396, 411, 425, 444 Permalloy, 167, 177, 178, 181, 182 Permeability, 164, 166–168, 172, 173, 175–178, 180–183, 452 Personal health, 517 PGA. See Pin grid array Photolithography, 164, 168, 174, 385, 386, 390, 445, 468–471, 485, 498, 499 Physical adsorption, 224 Physical bonding, 224 Physical interactions, 80, 85 Piezodroplet, 248 Piezoelectric, 248 Pin grid array (PGA), 492, 493, 499, 500 Plasma enhanced chemical vapor deposition (PECVD), 80, 174, 325, 390 Plated through hole (PTH), 210, 211, 497 PMMA. See Polymethylmethacrylate Polarization, 99, 102, 122–124, 130, 176, 240 Polyether ether ketone (PEEK), 423 Polyimide, 172, 175, 195, 205, 214, 257, 444 Polymer solder, 189 Polymethylmethacrylate, 482 Polyurethane, 214 Polyvinyl acetate (PVAc), 192 Polyvinyl pyrrolidone (PVP), 115, 216 Polyvinylidene fluoride (PVdF), 126, 194 PoP. See Package-on-package Potential function, 17, 52, 56, 77, 78, 86, 88 Printable electronics, 256, 258 Probability distribution function (PDF), 18, 19 Morris_Index.indd 541Morris_Index.indd 541 9/29/2008 8:10:06 PM9/29/2008 8:10:06 PM 542 Index Prolate spheroids, 103 Prony-Series, 301, 303, 305 Pseudo-inductive, 144 PTH. See Plated through hole P-type CNT, 363, 366 Public security, 517 Pull test, 266, 279, 284 PVAc. See Polyvinyl acetate PVdF. See Polyvinylidene fluoride PVP. See Polyvinyl pyrrolidone Q Q-factor. See Quality factor Quality factor, 163–170, 172, 173, 175, 178, 183 Quantum resistance, 368 Quantum wires, 346, 441 R Rayleigh, L., 103 Rayleigh instability, 448 Rectification, 361, 364, 365 Reflow, 25, 28, 219, 226, 229, 232, 233, 266–279, 284, 287, 418, 419, 424, 452, 495, 496 Relaxation, 123, 300, 301, 305–307, 313, 314, 322, 469, 471 Reliability, 15, 18–20, 29, 30, 32, 35, 41, 42, 46, 55, 61, 69, 74, 121, 164, 183, 202, 204, 209, 210, 212, 213, 224–226, 231, 258, 259, 265, 287, 288, 291, 316–317, 322, 357, 372, 382, 415, 442, 443, 445, 448, 450, 454, 465, 466, 468, 475, 478, 486, 499–501, 506, 520–523, 527, 529–531 Restriction of Hazardous Substances (RoHS), 113 Reynolds number, 381, 382 Roadmap, 6, 7, 465, 491, 495 RoHS. See Restriction of Hazardous Substances Rule of mixtures, 512 S SAC. See Sn-Ag-Cu SAM. See Self assembled molecular Saturation magnetization, 164, 172, 179–183 Scanning tunneling microscopy (STM), 157, 345 Schottky barrier, 358, 360, 361, 364, 366–368 Schottky junction, 361 Sea of leads (SOL), 468 Second level interconnect, 495, 513 Sedimentation, 197, 198, 241, 245, 258, 260 SEL. See Step-edge lithography Self assembled molecular (SAM), 200–202 Self resonant frequency, 171 Shear strength, 192, 196, 217, 433 Shielding, 6, 395–398, 401–411, 445, 452, 454 SiC. See Silicon carbide Signal integrity, 372, 494, 504 Silane, 4, 216, 225, 290 Silicon carbide, 382, 418 Silicone, 214 Siloxane, 203 Single molecule, 356, 357 Sintering, 2, 4, 98–99, 118, 119, 125, 197–200, 202, 212, 213, 215, 217, 220–222, 233, 243, 244, 250–254, 258, 417, 420, 422, 430, 432, 438 SiOC(H), 80, 82 SiP. See System-in-package Sn-Ag, 4, 28, 35, 98 Sn-Ag-Cu, 265, 416, 417, 421–432, 436–439 Sn-Pb, 98, 265, 416, 417, 419, 420, 422–439, 495 SOC. See System-on-chip SOL. See Sea of leads Space charge, 102, 159, 328 Sputter, 21, 145, 470, 484 Sputter deposition, 144, 151, 168, 181, 470, 482 Sputtering, 21–23, 140, 145, 151, 164, 168, 174, 182, 337, 338, 469, 470 Squeegee, 26 Stacked-die, 513 Stencil, 26, 27 Step-edge lithography (SEL), 445 Stiffness, 54, 74, 80, 176, 515 STM. See Scanning tunneling microscopy Stress gradient, 469–472, 482, 484, 485 Superparamagnetism, 180 Surface energy, 3, 41, 79, 94, 96, 202, 216, 256, 426, 429 Surface plasma resonance, 116 Surface plasmonic effect, 109 Surface roughness, 80, 170, 504, 514 Surface tension, 24, 48, 94, 243, 247, 250, 256, 382, 426 Surface/volume ratio, 93 Surfactant, 117–119, 128, 193, 205, 221, 240, 254, 416, 450 Switching, 102, 121, 143, 249, 346, 365, 367, 370, 371, 501 Morris_Index.indd 542Morris_Index.indd 542 9/29/2008 8:10:06 PM9/29/2008 8:10:06 PM Index 543 System-in-package (SiP), 121, 520, 527 System-on-chip, 121, 529 T Tape carrier packages (TCP), 190 TCP. See Tape carrier packages TEM. See Transmission electron microscopy Tensile strength, 5, 196, 224, 225, 233, 354, 385, 399, 416, 419, 428–429 Tessera, 467 Tg. See Glass transition temperature TGA. See Thermogravimetric analysis Thermal composite, 4 Thermal conductivity, 5, 39–41, 52–56, 196, 202, 212, 245, 249, 252, 355, 356, 377–380, 382, 385, 387, 389, 507–509 Thermal cycling, 41–45, 71, 193, 226, 265, 478–482, 486 Thermal resistivity, 385 Thermal interface material (TIM), 5, 39, 377, 378, 382–385, 391, 507 Thermionic emission, 193 Thermo
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