半导体制造设备

半导体制造装置支撑IC产业发展的基石MarkDing,TOKYOELECTRON(SHANGHAI)LIMITEDLihungChen,TOKYOELECTRONLIMITED2014/09/25MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITED•RecentChineseMarketandTechnologyChallenge•State-of-the-artWFETechnology•OutlookoftheNewEra•SummaryContents2RecentChineseMarketandTechnologyChallengeMarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDElectronicsIP&FablessIDM,Foundry&OSATWFEWaferFabEquipment未来蓝图离不开全球IC产业链的持续贡献HierarchyofTheSemiconductorIndustryIDM:IntegratedDeviceManufacturerOSAT:OutsourceAssemblyandTest4US$1,493BSemiconductorUS$316BUS$27BMarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITED010000200003000040000500006000070000TotalNumberofToolsDeliveredbyTEL™TEL™’sWFEbusinessgrowswithITindustry’sevolutionXeon/Corei3,5,71.4Btransistors22nm~4.0GHz2012~BusicomMadeinJapan(Firstapplication)DX41.6Mtransistors0.6micron~100MHz1994~40042.3Ktransistors10micron740kHz1971~ITIndustry&TEL™’sWFEBusiness5MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDWFE(WaferFabEquipment)CY2013CleaningSystemWaferProberCoater/DeveloperEtchSystem(Dielectric)ThermalProcessingSystemSource:Gartner,"MarketShare:SemiconductorManufacturingEquipment,Worldwide,2013“31March2014.CalculationperformedbyTokyoElectron.TEL™’sWFEBusinessDomain6MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDSidemandhasacorrelationtoworldwideGDPy=6.0195x+7490.7R²=0.9469010,00020,00030,00040,00050,00060,00070,00080,00002,0004,0006,0008,00010,000W/WGDP(currentprices,$B)WaferStart(MSI)010,00020,00030,00040,00050,00060,00070,00080,0001980198219841986198819901992199419961998200020022004200620082010IMFWorldwideGDP($B)Source:IMFWorldEconomicandFinancialSurveys(October,2013),ICknowledgeTheindustrywillgrowcontinuouslywithGDPgrowth7MSI:millionpersquareinchBillionofUSDMarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDChineseelectronicsplayersdrivesmartphonemarketChineseMarket&NewElectronicsPlayers771933484160.0200.0400.0600.0800.01,000.01,200.01,400.02011201220132014ChinaN.AmericaEuropeJapanS.KoreaIndiaLatinAmericaOtherAreaSmartphoneMarketbyRegionMUnitsSmartphoneMarketbyManufacturersSamsung30.7%Apple13.1%Huawei5.0%LG4.8%ZTE4.3%Lenovo4.7%Sony3.6%Yulong4.0%Nokia3.1%*Motorola1.3%HTC1.4%BlackBerry1.3%Xiaomi2.0%TCL2.9%Pantech0.3%Koyocera0.5%Others17.1%*MotorolatobeacquiredbyLenovoGroupSource:TSRReport20148MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDICImportTrends&WaferFabEstablishmentDalianWuxiBeijingWuhanShanghaiXi’anChinaICImport(Source:ChinaStatisticalBureau)(Source:TheSemiconductorIndustryNews)(BUSD)050100150200250InChina(inthelast10years)9ShenzhenMarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDComputingEvolution196019701980199020002010Source:http://en.wikipedia.org/wiki/History_of_supercomputing,Wikipedia,Fujitsu,kakaku.comCDC6600Cray-1Cray-2HitachiSR2201IBMBlueGene®NUDT天河二号HigherSpeedAppleIVideoGameDesktopPCNotebookPCLowerPowerConsumption,CostUltrabookTMTabletSmartPhoneBothhigherspeedandlowerpowerarerealized10MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITED•Devicescalingdelivers–Morehigherperformance/powerconsumption–Higherdevicedensity/costScalingLawSource:KelinKuhn/CNNA/Berkeley/2010Performanceandcostmeritshavebeendrivenbyscaling11MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDEquipmentEvolutionYear63717478818384858687888990919293ProcessNode12𝝁𝒎10𝝁𝒎8𝝁𝒎5𝝁𝒎3𝝁𝒎2𝝁𝒎1.5𝝁𝒎1.0𝝁𝒎0.8𝝁𝒎DRAMProduct1K4K16K64K256K1M4M16MWaferSize~100𝒎𝒎150𝒎𝒎1971LP-CVDTE480(PolyEtch)TE580•MechanicalConveyor•Posttreatmentchamber1986IW-6198320S•6inch•ProbermadeinJapan1984CLEANTRACKTMMARKII•BeltConveyor1989CLEANTRACKTMMARKV•Highspeedrobot•Multiplenozzle12MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDEquipmentEvolutionYear949596979899000102030405060708091011121314ProcessNode0.6𝝁𝒎0.25𝝁𝒎0.18𝝁𝒎0.13𝝁𝒎90𝒏𝒎65𝒏𝒎45𝒏𝒎32𝒏𝒎28𝒏𝒎22𝒏𝒎DRAMProduct64M256M512M1G2G4G8GWaferSize200𝒎𝒎300𝒎𝒎2012NT333™•ALD2008TELINDYPLUS™•Highproductivity2005Tactras™•Highproductivity2012Triase+EXIITMTiN•Singlewaferfilmdeposition2006CLEANTRACK™LITHIUSPro™•Higherreliability•Higherstability2010CELLESTA™–i•Singlewafercleaning2006Precio™•Smallerfootprint•Improvedopticalsystemperformance2011CertasWING™•ChemicalDryEtch1998ALPHA-8SEUNITYTM•Vacuumconveyor•Improvedproductivity•Improvedselectivity1996CLEANTRACKACT™8•Smallerfootprint•Higherproductivity1997P-8XL/P-8XLC•Highthroughput•Automaticwaferprober13MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDDiversifiedTechnologyRequirementsMoreMooreFunctionalDiversificationCMOSScalingNewMaterialNewStructureAdvancedPackaging(3DI/WLP)3DIStrainedSiHigh-kMetalGateCu/ULKFinFETPatterningArFArF-ImmersionEUVSource:TEL™basedonITRSDP/MPCarbonTr./CNTSiGe/III-VNIL,EBDWFlip-Chip2.5DWire-BondingSiPhotonicsHomogeneous450mmDSAMorethanMooreHeterogeneousDiversifiedtechnologydevelopmentisongoing14State-of-the-artWFETechnologyMarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDLithographyHistoryandRoadmap365nm248nm193nm13.5nm130nm90nm65nm45nm32nm22nm15nm180nm250nm350nm500nm800nmDryImmersionTodayDeviceNodeλoflightsourceVisibleLightEUV16Source:TEL™basedonITRSMarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDImmersionTechnologyImmersiontechnologyextends193nmlithographySource:M.Neisser,IEDM201317MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDMultiplePatterningSAQP40nmhp20nmhp12.5nmhpSAOPSADP40nmhp20nmhp10nmhp5nmhpPRCarbon193iSinglePatterning7.3nmhpSAOP:Self-AlignedOctuplePatterningSAQP:Self-AlignedQuadruplePatterningSADP:Self-AlignedDoublePatterningSAMP:Self-AlignedMultiplePatterningOxSource:A.Sekiguchi,SPIE2014SAMPenables193nmlithographytogeneratehp5nm18MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDDSA:DirectSelf-AssemblyResistpattern40nmSP128nmpitchWetResistStripNeutralLayerEtch16nmHP(4x)MultipleDSALine&Spaceintegrationflowshavebeendevelopedincollaborationwithcustomers,consortia,universities,materialssuppliersSource:A.Sekiguchi,SPIE2014DSAisacandidateforcosteffectivesub-20nmpatterning19HP:halfpitchMarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDCostComparisonofhpSub20nmPatterningSAQPHMMandrelSAQPPRMandrelSADPHMMandrel+DTDDSAEUV(THP60)+DPEUV(THP150)+DPLithographyDryEtchDepositionothers[$/wf]-17%0%+97%-44%-35%Source:TEL™MarketingEachtechnologyfacesdifferentchallengesrespectivelyTHP:ThroughputDTD:DualToneDevelopment20MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDLithography•ParticleReductionEtching•LER/LWRControlCleaning•PatternCollapsePreventionToday’sTopics21MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDLithographyProcessandEquipment*C.A.Mack,FieldGuidetoOpticalLithographyCoater&DeveloperExposureTool:Scanner/StepperProcessIllustrationLithography22MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDMajorCausesofDefectsUser’sSurveyBridgeResidueDefocusCollapseParticleOthersTop3DefectBridgeParticleDefocusLithography23MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDSignificanceofLWR/LERSource:http://www.eecs.berkeley.edu/Research/Projects/2008/105490.htmlUCBerkeleyShortChannelVtRoll-offLgvariationsource•Lithovariation•RIEvariationHighlyScaledDeviceLWR/LER•Chemistry•OptimumNe•Minimumionenergy•CureTechniqueRIEtechniquesOptimumplasmasourceLWR/LERVtfluctuateswithsmallLgvariationEtching24LWR:linewidthroughnessLER:lineedgeroughnessMarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDPatternCollapse:SurfaceModificationDryAfterIPADryAfterSurfaceModificationDrySMD:SurfaceModificationDryPatterncollapseiscausedbysurfacetension.T.Watanabe,ECSTrans.201358(6):191-196CELLESTA™-iCleaning25MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDLogicTechnologyRoadmap:NewMaterialStressorHKMG(RMG)FinFETSiGe/III-VDualDamasceneFEOLBEOL90nm65nm45nm22/20nm32/28nm16/14nm10nm7nmM.Bohr,IEDM2011P.Baietal.,IEDM2004,pp657-660P.Packanetal.,IEDM2009,pp.659-662http://download.intel.com/newsroom/kits/14nm/pdfs/Intel_14nm_New_uArch.pdfNewMaterialNewMaterialNewStructureK.Mistryetal.,IEDM2007,pp.247-250MetalHardMaskNewMaterialNewSeed/Barrier,InterconnectR.Brainetal.,IITC2009,pp.249-251MaterialandStructure:MorePerformanceImprovementNewMaterial26MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDHistoryandRoadmapofLow-kMaterial27Source:STRJWSInterconnect,2008MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDMetalHardmaskDualDamasceneResistMaskDualDamasceneDualDamasceneSchemeComparison28MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDTELhasearlyengagementwithcustomersfornewapproach.TELdeveloptechnologywithdifferentiationandfurtherfeedbackproductionexperiencetonewdevelopmentDPS2006,YTLia,CTHwang,etc29MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDAirGapIntegrationSchemeApproachEtchBackWetRemoveTDM(ThermalDegradableMaterial)FlowKeypointCucap(CuWP)AGELithoRemoveILD(SiO2)byHF,SAB400degC,underN2,1HrMeritEasyEtchMulti-levelcompatible(noalignmentissue)Multi-levelcompatible(noalignmentissue),nocorrosionDemeritAlignmentdifficultyHFbarrierULKmaterial,PackageMatsushitaet.al.IITC2007,7.11NXP.IITC2007,4.2NXP.IITC2007,4.330MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDHHeLiBeBCNOFNeNaMgAlSiPSClArKCaScTiVCrMnFeCoNiCuZnGaGeAsSeBrKrRbSrYZrNbMoTcRuRhPdAgCdInSnSbTeIXeCsBaHfTaWReOsIrPtAuHgTlPbBiPoAtRnFrRaLaCePrNdPmSmEuGdTbDyHoErTmYbLuAcThPaUNpPuAmCmBkCfEsFmMdNoLrMaterialsUsedinSemiconductorDeviceMaterialsaddedinthe90sMaterialsinthe80s31Materialsaddedsince2000MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDCleaningChallengeforNewMaterialsWaferFilmFlakeBackSidePolymerEmbeddedParticleFilmCrackParticleSurfaceParticleHigh-kandmetalmaterialsrequiresspecialcleaningBevelandbacksidecleaning32MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDStructure:PlanarFETtoFinFETPlanarFETFinFETUneasytocutoffleakageEasytocutoffleakageFinFETcansuppressstaticpowerconsumption33MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITED•FinFormationFlowHowtoFabricateFinFETSiSTITrenchEtchSTIFormationSTIEtchBackSTIetchbackcontroliskeytosuppressvariabilityEtchbackamountdecidesONstatecurrentofFinFET34MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDAdvancedPackagingTechnologyTrendsSource:TEL™MarketingProspect201820172016201520142013MobileServer2.5D/3D(Cube)2.1D/3D(Cube)PoPWLPLogicAnalogModuleMemoryEmbeddedMCPAnalog2DLogicMemory3DIntegrationSystemLevelIntegrationTSVTSVTSV*WaferLevelPackaging*PackageonPackageWLP,3DI,andSLIenhancedeviceperformance35MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDTemporaryBondingProcessCarrierWaferDeviceWaferBondingWaferBondingProcessFlowProtectionLayerCoatBakeReleaseLayerCoatBakeGlueBakeCoater/OvenCoater/OvenCoater/OvenBonderSynapse™V36Source:G.Chung,IME2014MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDDebondingProcessDevicewafer/wCarrierwaferMechanicalDebondDevicewaferCleaningDevicewaferCarrierwaferWaferDebondingProcessFlowDebonderDFCleanerDicingFrameSynapse™ZPlus37Source:G.Chung,IME2014MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITED20072008200920102011201220132014FiscalYear1007050809060BaseTarget4050%Reduction30%ReductionMiddleTargetAchievedEnergySavingformCorporatePerspectiveSource:SEMICONChina201438OutlookoftheNewEraMarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITED450mmMotivationRef.Nikon,2013Ref.TEL™,201240450mmisacostproject(withBigDevelopment)MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDTEL™WorldwideR&DSitesimec(Belgium)JapanSEMATECH(US)CEA-Leti(France)AlbanyNanoTech(US)TEL™R&DbaseConsortiumLeading-edgeProcessDevelopmentCenterTechnologyDevelopmentCenterTokyoElectornTechnologyCenter,SendaiTokyoElectronTechnologyCenter,AmericaTohokuUniversity(Japan)G450CPreparingforthefuturetechnology:w/wcollaboration41MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITEDEco-systemforSemiconductorDevelopment~OldDaysEndProduct(Electronics)ICDesignICManufacturingICDevelopmentDeviceIntegrationFailureAnalysisModuleProcessProcessDevelopmentMaintenanceHardwareProductionCurrent~EndProduct(Electronics)ICDesignICManufacturingICDevelopmentDeviceIntegrationFailureAnalysisModuleProcessProcessDevelopmentToolMaintenanceHardwareProductionWFESupplierICMakerWFESupplierICMakerRequiredclosecollaboration,Eco-system,forfurthersuccess42MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITED•Continuetoestablishthesuitableequipmenttechnologiesforfurtherchallenges,–Challenges:TechnologyDivergence•IntegratedCost-effectivePatterningTechnology•NewMaterialandStructure•AdvancedPackaging•ForHighVolumeManufacturing,:ParticleDetection/EnergySaving–TEL™canprovideforcurrentneeds,today.(VolumeProduction)–Partnershiptobuildabetterfuture,leadingedgecollaboration•Eco-system,closecollaboration,willmakeWin-WinscenarioSummary43MarkDing/TOKYOELECTRON(SHANGHAI)LIMITED/Rev.03/2014/09/18TEL-MKT-14056LihungChen/TOKYOELECTRONLIMITED44