SiC纤维增强Ti55复合材料的界面研究

RareMetalMaterialsandEngineedng Volume38，Issue10。October2009 OnlineEnglisheditionoftheChineselanguagejoumal Availableonlineatwww．sciencedirect．com ·：yScienceDirect Citethisarticleas：RareMetalMaterialsandEngineering，2009。38(10)：1703-1706． StudiesonInterfaceofSiCf／Ti55Composite HuangBin， YangYanqing，MeiYunwang，LuoXian，LiJiankang，ChenYan NorthwesternPolytechnicalUniversity,Xi"an7l0072,China Abstract：TheSiCfiberreinforcedTi55composite(Sic∥rri55)wasfabricatedbyFiberCoatingMethod(FCM)andHotIsostatic Pressing(HIP)．Afterthecompositeswerethermallyexposedinvacuumunderdifferentconditions，thestudyontheorderof interfacialreactionproductsandthekineticsofinterracialreactionwasperformed．Theresultsshowthatonlyc。TiandSielements takepartintheinterfacialreaction．TheorderofinterfacialreactionproductsofSiC以i55compositeexposedat1000。Cc锄be identifiedasSiCTi3SiC2TisSi3+TiCTiCTi55．However,theTi3SiC2doesnotexistinthecompositesexposedatlow temperature．Theinterfacialreactionlayergrowthiscontrolledbydiffusionandfollowsaroleofparabolicrate．andtheactivation energy∥andthepre-exponentialfactor‰ofsiccri55compositea11e198．16kJ·tool“and1．79x10。m-s“2，respectively．Compared withtheSiCCTicompositeandSiC汀i2AINbcomposite，thereisaninterfacewithhigherstabilityinSiCdTi55composite．However, theinterfacialreactionbetweenSiCfiberandmatrixtakesplaceeasierinSiC—Ti55compositethaninthesic(ri600compositeand SCS-6SiCdsupera2composite． Keywords：inteffacialreaction；SiC4厂ri55composite；growthkinetics SiCcontinuousfiberreinforcedtitaniumalloymatrix composites(TMC)canbeusedasstructuredmate：rialsinthe fieldofaeronauticsandastronauticsduetotheirhighspecific strengthandspecificmodulus【1叫．Actually,theinterracial reactiontakingplaceduringthecompositeconsolidationand hightemperatureserviceleadstotheformationofsomebrittle compoundsattheinterface．Thebrittleinterfacialreaction productsbecomethecrackoriginationandinfluencethe mechanicalpropertiesofthecompositesmJ．Therefore．itis veryimportanttocon仃oltheinterfacereactionbetweenSiC fiberandtitaniumalloyduringthecompositeconsolidation andhiglltemperatureservice． Inmis刚v．theSiCfiberreinforcedTi55alloymatrix composite(SiC用55composite)wasfabricatedbyFiber CoatingMethod(FCM)andHotIsostaticPressing(raP)．In ordertoinvestigatetheelementsdispersion．theformation orderofinterfacialreactionproductsandthekineticofthe interfacereactionwasstudiedbyScanningElectron Microscope(SEM)，EnergyDispersiveSpectroscopy(EDs) andX．rayDiffraction(XRD)．Theas．processedcomposites werethermallyexposedinvacumrnunderdifferentconditiOils． 1 Experimental Thediameteroffibersusedinthisstudywasabout100pin． AndthematrixwasTi55alloy,aseal"a-Ti·alloy,andits chemicalcompositionisTi．5A1．4Sn．2Zr．1Mo．1^m．0．25Sit'J． Ti55alloywasdepositedontoSiCfiberbyJGP．560A1 magnetronsputterequipment．Intheexperiment，thedistance betweenthetargetandthefiberwas60lnln，thebasevacuum was6．6×l0。耳Pa．thepowerofsputterwas800Wandthe pressureofargongaswas3．0MPa‘”．Beforedepositing．the fiberswerecleanedfor60rainbyRadioFrequency(RF) sputterinordertoremovetheimpuritiesonthem．TheseSiC fiberswithTi55coatingwerearrangedorderlyandcompactly, andsealedina sheathinvacuumandsubsequentlyhot isotropicpressedat900oCunder72MPa．Beforesealingin thesheath，thesheathhadtobecleanedwithacetoneinorder toremovetheimpuritiesonthesheath． Theas．processedSiC4Ti55compositeswerethermally exposedat800。Cfor200and500h．900。Cfor100and200 hand1000oCfor50and90h．respectively．Thetestsofthe interfaceanddistributionsofelementsattheinterfacein Receiveddate：October23，2008 Biography：HungBin，CandidateforPh．D．，DepartmentofMaterialsScienceandEngincermg，NorthwesternPolytedmicalUniversity,Xi’an．710072．P．I乙China, Tel：0086-29-88486091，E—mail：hwolf_2001@163．com Copyrigato2009，NorthwestInstituteforNonferrousMetalResearch．PIlbIishcdbyElsevierBV．Alldghtsreserved． 万方数据 HuangBineta1．／RareMealMa船riabandEngineering,2009,38(1彩?1703-1706 thecompositeswefeperformedonZEISSSUPRA55Scanning ElectronMicroscopewithINCAE350EnergyDisperseSpectra (EDS)．X-rayDiffraction(XRD)analysiswasperformedto determinethestructureoftheinterfaceproductsbyPANalytical X’PertProMPDDiffractometer．111cdiameterofX．raybeam wasabout100岫． 2 ResultsandDIscusslon 2．1 TheinterfacialreactioninS．C汀i55composite TheSEMimagesoftheinterfacesintheas．processed compositeandthecompositesexposedunderdifferent conditionsareshowninFig．1．Ascanbeseeninit．the thicknessesofinterfacialreactionlayerin SiC／Ti55 compositesincreasewithincreasingoftheexposure temperatureandtime．Forexample。thethicknessofthe interfacialreactionlayerinas-processedcompositeisabout 0．89gin，whileitisaboutl0Uminthecompositeexposedat 1000。Cfor90h．ThedetailedresultsareshowninTable1． Furthermore。comparedwiththeexrIOSuretime，theexposure temperatureismoresignificantforincreasingofinterracial reactionlayerthickness． TheX．raydiffractionpatternsoftheinterfacesinthe as-processedcompositeandthecompositesexposedunder differentconditionsareshowninFig．2．Ascanbeseeninit， TiCandlittleTi‘Silarethecompositionsofinterfacial reactionlayerintheas．processedcomposite．Boththe magnitudesofTiCandTisSi3incompositesexposedat900。C for100handat800。Cfor200haremorethant110seinthe as-processedcomposite．Inaddition。besidesTiCand Fig．1SEMimagesoftheinterfacialreactionlayerintheSiC4Ti55 compositesunderdifferentthermalexposurecondition： (a)[isprocessed,(b)800。C，200b，(c)800。C，500h' and(d)900。C，200h Table1 ThicknessesoftheInterfaelalreactionlayerInthe SiCdTi55underdifferentthermalexposure conditions Thermal ．800。C expos啪A8‘pro∞辩d面磊丽瓦 900oC 1000oC 100h200h50h90h 20／(。) Fig．2XRDpattemsofSiC#Ti55compositesunderdifferent thermalexposureconditions Ti5Si3，Ti3SiC2ispresentattheinterfaceinthecomposite exposedat1000oCfor50h． 硼呛elementallineprofileaCrOSStheinterfacialreaction layeroftheSiC州55compositeexposedatl000oCfor90h isshowninFig．3．Asshowninit，onlytheconcen仃afionsofC。 TiandSielementsareundulate，whichmeansthatonlyC。Ti andSielementsinthecompositesystemtakepartinthe interfacialreactionbutotherelementsdonot．suchasAl-Z|r andZnelements．ere．Thispointisinagreementwiththe resultofX．raydiffractiontestinFig．2．Meanwhile．itisalso similartotheresultsoftheSiCfiberreinforcedTi．6Al-4V compositeandtheSiCfiberreinforcedTi600composite[9,toJ． AccordingtoX．raydiffractionresultsinFig．2andthe distributionoftheelements(at％)attheinterfaceinFig．3，the interfacialreactionlayercanbebasicallydividedintothree sub．1ayers．Theproportionofelements(aeA)inthesub．1ayer closetotheTi55matrixisapproximatelyTi：C=1：1．whichis inagreementwiththeproportionofelementsofTiC．The proportionofelements(at％)inthesub．1ayerclosetotheSiC fiberisapproximatelyTi：Si：C=3：l：2．whichisagreementwith theproportionofelementsofTi3SiC2．Theproportionof elements(at％)inthesub．1ayerbetweentheabovetwo sub—layersisapproximatelyTi：Si：C=3：l：1．nisnotonlyin agreementwiththeproportionofelementsofTiCorTi5Si3， butalsoinagreementwiththeproportionofelementsof Ti3SiC2．Therefore，itisprobablythemixtureofTiCandTi5Si3 withthelargemagnitudeofTiC．ThesimilarmixtureofTiC andTi5Si3alsocanbefoundintheSiCfiberreinforeed Ti-6AH．VcompositepJ．Theproportionofelements(at％)in thesub—layerveryclosetotheSiCfiberisnotinagreement withtheproportionofelementsofTi3SiC2andC concentrationisrelativelyhighint11isarea．Itisattributedto theSiCfiberinfluencebecausethespotsizeoftheSEMis 万方数据 Hu删gBmetal．／RareMetalMaterialsandEngineering,2009,38flo)：1703-1706 Distance／pro Fig．3Theelementallinepmfileacrosstheinterfacialreactionzonc ofSiCJTi55composite强posedat1000oCfor90h large．11圮similarphenomenonisalsopresentatthesub-layer veryclosetoTi55marx． IntheSiCf门ri55composite，theinterfacialreactionatthe earlierstagemaytakeplaceasfollows： Ti+C—'TiC (1) 5Ti+3Si-,TisSi3 (2) 8Ti+3SiCjTi5Si3+3TiC (3) andTiCandTi5Si3forminthereactions．T11isstageisa reaction-controlledprocess【11’1“．However,theinterfacial reactionwillbecontrolledbydiflusionaRerathininterfacial reactionlayerformsattheinterfacebetweenSiCfiberand Ti55matrix．SiandCatomsdiflu8efromSiCfibertomatrix andTiatomsinverselydiffusefrommatrixtoSiCfiber．Asthe compositeswereexposedat800and900。C，theTi。SiandC atomswoulddiffIlsetothefrontsideoftheinterracialreaction layerbecausethethicknessofinterfacialreactionlayeristhin． Consequently,themagnimdesofTisSi3andTiCincrease graduallywithincreasingoftheexposuretemperatureandtime． Asthecompositewasexposedat1000。C，thethicknessof interfacialreactionlayerincreasesrapidly．Withthediffusion continuing，Tiatomsdiffusingtotheinterfacialreactionlayer closetoSiCfibergraduallyreduce．However,Catomsstackin thisarea．Asaresult,Ti3SiC2forms．Accordingtoreference 【12—14]，theformingtemperatureofTi3SiC2decreasesbecause AlandTiCexist,whichisabout1000。C．Thispointalso verifiesthepossibilityofthepresenceofTi3SiC2． Thereforeitiscanbeconcluded．勰thecompositesare exposedat800and900。C．thestructureoftheinterfacial reactionlayercanbeidentifiedasSiCTi5Si3+TiCfTiCTi55； 鹪thecompositeisexposedat1000oC．thestructureofthe interfacialreactionlayercanbeidentified舔SiCTi3SiC2 ITisSi3+TicTiCTi55．Ti3SiC2isonlypresentinthe compositeexposedat1000oC． 2．2 Growthkineticofinterfacialreactionproducts Asdisenssedabove．theinterfacialreactionisareaction- controlledp】focessatitsearlierstage．However,theralction- controlledprocesssoonfinishedandthenitwascontrolledby diffusionwhena thinl'e捌onlayerisformed．The di。ffusion-controlledgrowthoftheinterfacialreactionlayer mayfollowaparaboliclaw舔L1刈 ／=／a“o％ (4) where，isthethicknessoftheinterfacialreactionlayer．kis therateconstantwhichisrelatedtothediffusioncoefficientof thecomponentsandthethermodynamicpropertiesofthe interfacialreactionlayers．tistheexposuretimeandboisthe originalthicknessofthereactionlayerinthe够processed composite．Fig．4showstherelationshipbetweenthethickness oftheinterfacialreactionlayerandthesquarerootofthe exrIosuretimeatdifferenttemperaturesforthesecomposites． Thedatapointsforeachexposuretemperaturealefittedwitha straightlinetoestimateageneralizedreactionrateconstant． Thefittedequationsareasfollows： 1=0．17481t"z+0．76319 (5) 扣0．39883t“2+0．79073 (6) ，_1．00206t”40．85565 (7) wheretheunitsof，andtalemnands，respectively． Additionally,therateconstantkinequation(4)follows ArrheniusrelationdIoj k=-koexp(_Ql【／2尺乃 (8) where‰isthepre·exponentialfactor,whichisalsorelatedto thediffusioncoefficientandthethermodynamicproperties，∥ isthegrowthactivationenergy，Risthegasconstant 职=8．3462J’mol“K“)，andTistheexposuretemperature． Fig．5showstheArrheniusplotoftheparabolicrateconstant ofSiC／Ti55composite．Accordingtotheequation(8)，the valuesof岛and∥canbecalculated．Tlle∥ofSiCfri55 compositeis198．16kJ·mol。and‰is1．79x10一m·s““．The ∥ofSiCflTi55compositeishigherthanthatofSiC／Ti composite(Q匕151．2kJ‘m01-1)u”andhigherthanthatofSiCk／ Ti2AINbcomposite(Q‘=175．709kJ·molq)【141．Consequently, comparedwiththeSiC4TicompositeandSiCdTi2AINb composite．thereisaninterfacewithhigherstabilityin SiCCTi55composite．However'Q^0fSiC趼t55compositeis farlowerthanthatofSiCtCTi600composite(∥-266．46 詈 茎 蚤 趸 耋 Timel／2／h1彪 Fig．4InterfacialreactionkineticcurvesofSiCfl'i55composites exposedatdifferenttemperatures 万方数据 HuangBinetal．／RareMetalMaterialsandEngineering,200938CLO)：1703-1706 T't／X104K-1 Fig．5Arrheniusdiagramoftheinterfacialreactionlayergrowthin SiCtCTi55composite kJ·mol。1一明andalsofarlowerthanthatofSCS．6SiC／supera2 composite(Qk=317．664kJ·molll)‘141．Asaresult，compared withtheSiCfIrFi600compositeandSCS一6SiCf／supera2 composite，theinterfacialreactionbetweenSiCfiberand matrixtakesplaceinSiC／Ti55composite． 3 COncIusIOns 1)Asthecompositesareexposedat800and900。C，the structureoftheinterfacialreactionlayercanbeidentifiedas SiCTisSi3+TiCTiCTi55；ascompositeisexposedat1000 。C．thestructureoftheinterfacialreactionlayercanbe identifiedasSiCITi3SiC2ITisSi3+TiCTiCTi55． 2)Thevalueof∥ofSiC／Ti55compositeis l98．16 kJ·mol-1and‰ofthiscompositeis1．79x10"’m·s．“2． 3)ComparedwiththeSiClmcompositeandSiC／Ti2A仆m composite，thereisaninterfacewitllhi曲el"stabilityin SiCf门n55composite．However,theinterfacialreaction betweenSiCfiberandmatrixtakesplaceeasierinSiC，n55 compositethanintheSiC／Ti600compositeandSCS-6 SiC／superazcomposite． References l LuoGuozhen(罗国珍)．RareMetalMaterialsandEngineering (稀有金属材料与工程)【J】，1997，26(2)：l 2 Ward-CloseCMeta1．InRecentAdvancesinTitaniumMetal MatrixComposites[C]．Warrendale，PA：TMS，1995：19 3 WardCloseCMeta1．Intermetallics[J]，1996，4：217 4 ZengLiying(曾立英)eta1．RareMetalMaterialsand Engineering(稀有金属材料与工程)【J】，2000，29(3)：21l 5 YangYQeta1．MaterSciandEng[J]，1998，A246：213 6 HuangBineta1．MaterSeiandgng[J]，2008，A489：178 7 LiuYuyin(刘羽寅)eta1．JournalofTheChineseRareEarth Society(中国稀土学报)【J】，1998，16(2)：162 8 MaZhijuneta1．MaterialsLetters[J]，2004，58：2118 9 FuYCeta1．MaterSciandEng[J]，2006，A426：278 10MeiYunwang(梅运旺)eta1．RareMetalMaterialsand Engineering(稀有金属材料与工程)[J】，2008，37(10)：1839 11 LnXianghongeta1．TransNonferrousMetSocofChi加[j]，2006， 16(2)：77 12YehCLPfa1．JournalofAlloysandCompounds[J]，2008，458： 286 13 LiangBYeta1．dournalofAlloysandCompounds[J]，2008，460： 440 14ZouYongeta1．JournalofAlloysandCompounds[J]，2008，461： 579 15MartineauPeta1．JournalofMaterialsScience[J]，1984，19： 2749 16AkimFukushimaetal．MaterSciandEng[J]，2000，A276：243 17ZhangGuoxingeta1．JMaterSciTechnol[J]，2003，19(5)：407 SiC纤维增强Ti55复合材料的界面研究 黄斌，杨延清，梅运旺，罗贤，李健康，陈彦 (西北工业大学，陕西西安710072) 摘要：利用纤维涂层法(FMC)、结合热压工艺制备了SiC纤维增强Ti55基复合材料(SiCfm55)。主要研究复合材料在经不同条件 真空热暴露处理后，其反应产物相形成的反应序列以及界面反应动力学。结果 表 关于同志近三年现实表现材料材料类招标技术评分表图表与交易pdf视力表打印pdf用图表说话 pdf 明，仅C、Si和Ti等元素参与了界面反应。在1000oC 热暴露时，SiC／Ti55复合材料界面反应产物序列为SiCTi3SiC2Ti5Si3+TiCTiCTi55。但是，在低温热暴露的复合材料中不存在Ti3SiC2 相。SiCgTi55复合材料界面反应产物的生长受扩散控制且遵循抛物线生长规律，其生长激活能矿及指数系数岛分别为198．16ld·tool"l， 1．79x10dm·s-屺。相比SiCdTi复合材料和SiCdTi2A1Nb复合材料，SiCdTi55复合材料拥有一个高稳定性的界面。然而，相比SiC／Ti600 复合材料和SCS-6SiC／supera2复合材料，SiCeTi55复合材料中的纤维与基体更容易发生反应，且界面层更容易生长。 关键词：界面反应；SiC／Ti55复合材料；生长动力学 作者简介：黄斌，男，1979年生，博士生，西北工业大学材料科学与工程学院，陕西西安710072，电话：029．88486091，E-mail 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