半导体二极管(中文 英文)

半导体二极管(中文 英文) 半导体二极管(中文+英文) 半导体二极管 半导体二极管是含有一个PN结的二端器件。它是最简单的半导体器件。P型 材料 关于××同志的政审材料调查表环保先进个人材料国家普通话测试材料农民专业合作社注销四查四问剖析材料 一端称为正极，而N型材料一端称为负极。 二极管是只允许电流朝一个方向流动的半导体器件。它能被用来把交流电转换成直流电。二极管的两个引线被分为阳极和阴极。 当二极管的正极电位高于负极电位(其差值大于开启电压，对锗管近似为0.3V，对硅管近似为0.7V)时称二极管是正向偏置，这时二极管的内阻是很小的，有一个较大的电流流过二极管，流过电流的大小取决于外部电路的电阻。 当二极管的正极电压高于负极电位时称二极管反向偏置，这时二极管的内部电阻非常高，所以一个理想的二极管可以阻挡反向的电流而让正向的电流通过。 一个二极管的实际特性曲线并不是十分理想的，如图所示。当理想二极管反向偏置时，电流不能通过，而实际二极管却有约10μA的电流通过(虽然很小，但仍不够理想)。如果加上足够大的反向电压，PN结就会被击穿，让电流反向通过。一般要选择二极管的反向击穿电压远大于电路中可能出现的电压，二极管才不会击穿。 齐纳二极管(稳压管) 稳压管是一种特殊的二极管，在正偏的条件下，它与一般的二极管有相同的特性(可以流过一个大电流)。但是，在反向偏置时，在外加电压 低于稳压电压(UZ)时它不导通，在外加电压等于稳压电压(UZ)时稳压管反向导通，同时维持稳压管两端的电压为稳压值(如图)。流过稳压管电流的大小由两个因子决定，一个为串联的(限流)电阻(RS)，另一个为并联的负载电阻(RL)。 电阻RS由公式RS=URs/IZ确定，其中URs=Usource-UZ，在没有负载时，一个特定大小的电流(IZ=IRs)流过稳压二极管和RS，电压降URs加UZ等Usource，Usource至少要比UZ高1V。当一个负载并连到稳压二极管，流过二极管的电流由于负载的分流而减小，所以通过RS的电流保持为常数(IZ=IRs-IRL)。稳压管通过改变流过它的电流来维持稳压管两端的电压稳定。 晶体管 晶体管是由贝尔电话实验室的Wm. Shockley,John Bardeen和Walter H. Brattain三位博士发明的一种器件，是电子技术中最重要的器件。它不仅被作为分立元件，而且在集成电路芯片中也包含成千上万的晶体管。 晶体管是三端器件，可用作放大器和作为开关器件使用。晶体管有两种基本类型，结型晶体管和场效应晶体管。 结型晶体管 结型晶体管也称晶体管。它的工作依赖于两种载流子，即多数载流子和少数载流子的流动，并且有两个PN结。 可以有以下两种安排:N型在中间，P型在两边(PNP);P型在中间，N型在两边(NPN)。中间称为基极，两边分别称为发射极和集电极。 晶体管是调节流过它的电流的电子控制器件，电流从电源流进发射极，穿过很薄的基区，再从集电极流出，电流始终朝着这个方向流动。改变基 极电流，电流大小也会改变，基极电流只需很小的变化，就会引起集电极电流很大的变化。正是这种能力使晶体管具有放大作用。 集电极电流IC与基极电流IB成正比，小于发射极电流IE，因为要使三极管导通必须有一个小的基极电流流入(发射极)，三个电流之间的关系是IE=IC+IB。IC与IB的比值称为三极管的电流放大系数，用来 表 关于同志近三年现实表现材料材料类招标技术评分表图表与交易pdf视力表打印pdf用图表说话 pdf 示三极管放大电流的能力，这个电流放大倍数称为β，当C、E两端的电压(UCE)保持不变时有β=ΔIC/ΔIB。 晶体管在电路中有三种连接方式:共基极、共发射极和共集电极。 场效应晶体管 场效应晶体管通常称为场效应管。它的电流仅由多数载流子提供(可以是电 子，也可以是空穴，且只有一个PN结)。 目前， 设计 领导形象设计圆作业设计ao工艺污水处理厂设计附属工程施工组织设计清扫机器人结构设计 微电路中最普遍的技术是利用MOS管。缩写词MOS表示金属氧化物半导体，分别表示用金属作门极，氧化物作绝缘层，半导体作沟道、基底等。 根据载流子的不同，MOS管可以分为两类:N沟道和P沟道。N沟道MOS管用电子导通电流，而P沟道MOS管用空穴传导电流。此外，N沟道MOS管用一个正的门电压导通而P沟道MOS管用负的门电压导通。 根据电压条件不同，MOS又可分为增强型和耗尽型两种。增强型MOS晶体管与耗尽型MOS管的符号如图。 三极管技术主要应用单一管(全部用NPN型或全部用PNP型)形式设计电路，与之不同的是MOS管设计的电路一般用两种互补型的晶体管，一块同时含有N沟道MOS管和P沟道的MOS管高驻地的电路一般用两种 互补型的晶体管，这样的集成电路称为CMOS电路。 晶体管的测试 在实际应用中，对晶体管须进行四项基本测试:增益、漏电流、击穿 电压和开关时间。所有这些测试最好用通用晶体管测试仪和示波器进行测 试。也可以用欧姆表测试。这种简易的欧姆表测试可以了解晶体管是否漏 电，是否有某些增益。准确测试晶体管的唯一 方法 快递客服问题件处理详细方法山木方法pdf计算方法pdf华与华方法下载八字理论方法下载 是在所用的电路中进行 测试。Semiconductor diode Semiconductor diode is containing a PN junction of the two devices. It is the most simple semiconductor devices. P type material called positive, and one end of n-type materials end called negative. Diode is only allowed current flow in one direction of semiconductor devices. It can be used to convert the ac to dc. Two of the diode's lead is divided into the anode and cathode. When the potential negative than positive diode sent a value greater than its potential (open voltage on germanium tube, is near to 0.3 V, silicon tube approximation for 0.7 V) said diode is positive bias, at this time of the diode's resistance is very small, there is a large current through the diode, through the size of the current depends on external circuit resistance. When the positive voltage higher than negative diode as potential bias, then reverse diode of the diode's internal resistance is very high, so a ideal diode can stop the reverse current and make positive current through the. A diode actual characteristic curve is not very ideal, as shown in figure. When the ideal diode reverse bias, electric current cannot go through, and the actual diode is about 10 u A current through the (although small, but is still not ideal). If plus large enough to reverse voltage, PN junction will be punctured, to let the current reverse pass. In general to choose the diode reverse breakdown voltage far outweigh the circuit of possible voltage, diode wouldn't breakdown. Zener voltage (tube) Inside the tube is a special kind of diode, in is partial, under the condition of it and general diodes have the same properties (through a large current can be). But, in reverse bias, in an external voltage stabilizing voltage (less than) when it is not UZ conduction, in an external voltage stabilizing voltage is equal to (UZ) voltage will flow when the pipe, and at the same time maintain on both ends of the voltage regulator tube for voltage value (see chart). The size of the tube current flows through voltage by two factors, a decision for the series (limited to flow) resistance (RS), another for parallel load resistance (RL). Resistance RS from the formula RS = URs/IZ sure, including URs = Usource-UZ, in no load, a specific size of the current (IZ = IRs), which flows through the diode and RS, stabilizing voltage drop and UZ, etc Usource URs, at least Usource than UZ high 1 V. When a load and even to the voltage of the diode's current flows through a diode, due to load distribution and decreases, and so by the RS current keep constant (IZ = IRs-IRL) came. Inside the tube through the change of current flows through it to maintain the voltage on both ends of the voltage stability. transistor The transistor is by the bell telephone laboratories Wm. John Bardeen and Shockley, Walter Brattain h. three doctor invents a device that is electronic technology in the most important devices. It is not only as a division components, and in integrated circuit chips also includes hundreds of thousands of transistors. Transistors are three end devices can be used as amplifier and switching devices as use. A transistor has two basic types, "of transistor and field effect transistor. "Type transistor junction transistor of transistor also said. It's the job of the dependent on the two carriers, namely the majority carrier and the flow of the minority carriers, and two PN junction. Can have the following two arrangement: N type in the middle, P type is on both sides (PNP); P type in the middle, N type is on both sides (NPN). Among, both sides is called base respectively called emitter and the collector. The transistor is to adjust the current flows through it the electronic control devices, from the current origin into emitter, across the very thin base area, and again from the collector current outflow, always in that direction flow. Current, the current size change base will also change, only small onthe base current changes, it would cause collector current very big change. It is this ability makes the transistor has amplification. Collector current IC and base is proportional to the current IB, less than emitter current IE because, to make transistor conductivity must have a small base current inflows (emitter), three of the relationship between the current is IE = IC + IB. IC and the ratio of the IB transistor's current amplification coefficient is called, used to show the ability of the current transistor amplifier, the current magnification called beta, when C, E on both ends of the voltage (UCE) remain unchanged when beta = Δ IC/Δ IB. Transistors in a circuit has three connection mode: GongJiJi of emitter and collector of,. Field effect transistor field effect transistors mosfet often called. Its current only by majority carrier (can provide is electronic, also can be the hole, and only a PN junctions). At present, the most common design circuits, the technology USES MOS tube. Abbreviations, MOS said metal oxide semiconductor, respectively with metal as a door said, the oxide as insulating layer, semiconductor, basement, etc. For the channel According to the different carriers, MOS tube can be classified into two categories: N and P in gully channel. N channel MOS work flow, and power electronic conductivity MOS work hole transmission channel P current. In addition, N MOS work a channel is door voltage conduction and P channel for the MOS useful door voltage conduction. According to the different voltage condition, MOS and can be divided into enhanced and exhaustion types. Enhanced MOS transistors and run out of the tube type MOS symbols as shown in the diagram. Transistor technology mainly used a single pipe (all in NPN type or all in the PNP type) form design, different circuit is the design of the MOS circuit generally with the two complementary type transistor, a piece of also contains N and P MOS tube in gully channel MOS tube high post circuit with two complementary general type of transistor, the integrated circuit called CMOS circuit. Transistor test In the practical application of transistors, shall be four basic test: gain, leakage current, breakdown voltage and switching time. All of the tests, had better use general transistor tester and oscilloscope for testing. Also can use ohm table test. This simple ohms table test can know whether transistor, whether to have some gain leakage. Accurate test was the only way in transistor used circuit testing. 半导体二极管 Semiconductor diode 半导体二极管是含有一个PN结的二端器件。 Semiconductor diode is containing a PN junction of the two devices. 它是最简单的半导体器件。 It is the most simple semiconductor devices. P型材料一端称为正极，而N型材料一端称为负极。 P type material called positive, and one end of n-type materials end called negative. 二极管是只允许电流朝一个方向流动的半导体器件。 Diode is only allowed current flow in one direction of semiconductor devices. 它能被用来把交流电转换成直流电。 It can be used to convert the ac to dc. 二极管的两个引线被分为阳极和阴极。 Two of the diode's lead is divided into the anode and cathode. 当二极管的正极电位高于负极电位(其差值大于开启电压，对锗管近 似为0.3V，对硅管近似为0.7V)时称二极管是正向偏置，这时二极管的内 阻是很小的，有一个较大的电流流过二极管，流过电流的大小取决于外部 电路的电阻。 When the potential negative than positive diode sent a value greater than its potential (open voltage on germanium tube, is near to 0.3 V, silicon tube approximation for 0.7 V) said diode is positive bias, at this time of the diode's resistance is very small, there is a large current through the diode, through the size of the current depends on external circuit resistance. 当二极管的正极电压高于负极电位时称二极管反向偏置，这时二极管 的内部电阻非常高，所以一个理想的二极管可以阻挡反向的电流而让正向 的电流通过。 When the positive voltage higher than negative diode as potential bias, then reverse diode of the diode's internal resistance is very high, so a ideal diode can stop the reverse current and make positive current through the. 一个二极管的实际特性曲线并不是十分理想的，如图所示。 A diode actual characteristic curve is not very ideal, as shown in figure. 当理想二极管反向偏置时，电流不能通过，而实际二极管却有约10 μA的电流通过(虽然很小，但仍不够理想)。 When the ideal diode reverse bias, electric current cannot go through, and the actual diode is about 10 u A current through the (although small, but is still not ideal). 如果加上足够大的反向电压，PN结就会被击穿，让电流反向通过。 If plus large enough to reverse voltage, PN junction will be punctured, to let the current reverse pass. 一般要选择二极管的反向击穿电压远大于电路中可能出现的电压，二 极管才不会击穿。 In general to choose the diode reverse breakdown voltage far outweigh the circuit of possible voltage, diode wouldn't breakdown. 齐纳二极管(稳压管) Zener voltage (tube) 稳压管是一种特殊的二极管，在正偏的条件下，它与一般的二极管有 相同的特性(可以流过一个大电流)。 Inside the tube is a special kind of diode, in is partial, under the condition of it and general diodes have the same properties (through a large current can be). 但是，在反向偏置时，在外加电压低于稳压电压(UZ)时它不导通， 在外加电压等于稳压电压(UZ)时稳压管反向导通，同时维持稳压管两端 的电压为稳压值(如图)。 But, in reverse bias, in an external voltage stabilizing voltage (less than) when it is not UZ conduction, in an external voltage stabilizing voltage is equal to (UZ) voltage will flow when the pipe, and at the same time maintain on both ends of the voltage regulator tube for voltage value (see chart). 流过稳压管电流的大小由两个因子决定，一个为串联的(限流)电阻 (RS)，另一个为并联的负载电阻(RL)。 The size of the tube current flows through voltage by two factors, a decision for the series (limited to flow) resistance (RS), another for parallel load resistance (RL). 电阻RS由公式RS=URs/IZ确定，其中URs=Usource-UZ，在没有负载时， 一个特定大小的电流(IZ=IRs)流过稳压二极管和RS，电压降URs加UZ 等Usource，Usource至少要比UZ高1V。 Resistance RS from the formula RS = URs/IZ sure, including URs = Usource-UZ, in no load, a specific size of the current (IZ = IRs), which flows through the diode and RS, stabilizing voltage drop and UZ, etc Usource URs, at least Usource than UZ high 1 V. 当一个负载并连到稳压二极管，流过二极管的电流由于负载的分流而 减小，所以通过RS的电流保持为常数(IZ=IRs-IRL)。 When a load and even to the voltage of the diode's current flows through a diode, due to load distribution and decreases, and so by the RS current keep constant (IZ = IRs-IRL) came. 稳压管通过改变流过它的电流来 维持稳压管两端的电压稳定。 Inside the tube through the change of current flows through it to maintain the voltage on both ends of the voltage stability. 晶体管 transistor 晶体管是由贝尔电话实验室的Wm. Shockley,John Bardeen和Walter H. Brattain三位博士发明的一种器件，是电子技术中最重要的器件。 The transistor is by the bell telephone laboratories Wm. John Bardeen and Shockley, Walter Brattain h. three doctor invents a device that is electronic technology in the most important devices. 它不仅被作为分立元件，而且在集成电路芯片中也包含成千上万的晶 体管。 It is not only as a division components, and in integrated circuit chips also includes hundreds of thousands of transistors. 晶体管是三端器件，可用作放大器和作为开关器件使用。 Transistors are three end devices can be used as amplifier and switching devices as use. 晶体管有两种基本类型，结型晶体管和场效应晶体管。 A transistor has two basic types, "of transistor and field effect transistor. 结型晶体管 结型晶体管也称晶体管。 "Type transistor junction transistor of transistor also said. 它的工作依赖于两种载流子，即多数载流子和少数载流子的流动，并 且有两个PN结。 It's the job of the dependent on the two carriers, namely the majority carrier and the flow of the minority carriers, and two PN junction. 可以有以下两种安排:N型在中间，P型在两边(PNP); Can have the following two arrangement: N type in the middle, P type is on both sides (PNP); P型在中间，N型在两边(NPN)。 P type in the middle, N type is on both sides (NPN). 中间称为基极，两边分别称为发射极和集电极。 Among, both sides is called base respectively called emitter and the collector. 晶体管是调节流过它的电流的电子控制器件，电流从电源流进发射极， 穿过很薄的基区，再从集电极流出，电流始终朝着这个方向流动。 The transistor is to adjust the current flows through it the electronic control devices, from the current origin into emitter, across the very thin base area, and again from the collector current outflow, always in that direction flow. 改变基极电流，电流大小也会改变，基极电流只需很小的变化，就会 引起集电极电流很大的变化。 Current, the current size change base will also change, only small onthe base current changes, it would cause collector current very big change. 正是这种能力使晶体管具有放大作用。 It is this ability makes the transistor has amplification. 集电极电流IC与基极电流IB成正比，小于发射极电流IE，因为要使 三极管导通必须有一个小的基极电流流入(发射极)，三个电流之间的关 系是IE=IC+IB。 Collector current IC and base is proportional to the current IB, less than emitter current IE because, to make transistor conductivity must have a small base current inflows (emitter), three of the relationship between the current is IE = IC + IB. IC与IB的比值称为三极管的电流放大系数，用来表示三极管放大电流 的能力，这个电流放大倍数称为β，当C、E两端的电压(UCE)保持不变 时有β=ΔIC/ΔIB。 IC and the ratio of the IB transistor's current amplification coefficient is called, used to show the ability of the current transistor amplifier, the current magnification called beta, when C, E on both ends of the voltage (UCE) remain unchanged when beta = Δ IC/Δ IB. 晶体管在电路中有三种连接方式:共基极、共发射极和共集电极。 Transistors in a circuit has three connection mode: GongJiJi of emitter and collector of,. 场效应晶体管 场效应晶体管通常称为场效应管。 Field effect transistor field effect transistors mosfet often called. 它的电流仅由多数载流子提供(可以是电子，也可以是空穴，且只有 一个PN结)。 Its current only by majority carrier (can provide is electronic, also can be the hole, and only a PN junctions). 目前，设计微电路中最普遍的技术是利用MOS管。 At present, the most common design circuits, the technology USES MOS tube. 缩写词MOS表示金属氧化物半导体，分别表示用金属作门极，氧化 物作绝缘层，半导体作沟道、基底等。 Abbreviations, MOS said metal oxide semiconductor, respectively with metal as a door said, the oxide as insulating layer, semiconductor, basement, etc. For the channel 根据载流子的不同，MOS管可以分为两类:N沟道和P沟道。 According to the different carriers, MOS tube can be classified into two categories: N and P in gully channel. N沟道MOS管用电子导通电流，而P沟道MOS管用空穴传导电流。 N channel MOS work flow, and power electronic conductivity MOS work hole transmission channel P current. 此外，N沟道MOS管用一个正的门电压导通而P沟道MOS管用负的 门电压导通。 In addition, N MOS work a channel is door voltage conduction and P channel for the MOS useful door voltage conduction. 根据电压条件不同，MOS又可分为增强型和耗尽型两种。 According to the different voltage condition, MOS and can be divided into enhanced and exhaustion types. 增强型MOS晶体管与耗尽型MOS管的符号如图。 Enhanced MOS transistors and run out of the tube type MOS symbols as shown in the diagram. 三极管技术主要应用单一管(全部用NPN型或全部 用PNP型)形式设计电路，与之不同的是MOS管设计的电路一般用两种 互补型的晶体管，一块同时含有N沟道MOS管和P沟道的MOS管高驻地 的电路一般用两种互补型的晶体管，这样的集成电路称为CMOS电路。 Transistor technology mainly used a single pipe (all in NPN type or all in the PNP type) form design, different circuit is the design of the MOS circuit generally with the two complementary type transistor, a piece of also contains N and P MOS tube in gully channel MOS tube high post circuit with two complementary general type of transistor, the integrated circuit called CMOS circuit. 晶体管的测试 Transistor test 在实际应用中，对晶体管须进行四项基本测试:增益、漏电流、击穿 电压和开关时间。 In the practical application of transistors, shall be four basic test: gain, leakage current, breakdown voltage and switching time. 所有这些测试最好用通用晶体管测试仪和示波器进行测试。 All of the tests, had better use general transistor tester and oscilloscope for testing. 也可以用欧姆表测试。 Also can use ohm table test. 这种简易的欧姆表测试可以了解晶体管是否漏电，是否有某些增益。 This simple ohms table test can know whether transistor, whether to have some gain leakage. 准确测试晶体管的唯一方法是在所用的电路中进 行测试。 Accurate test was the only way in transistor used circuit testing.