PMV65XP

PMV65XP P-channel TrenchMOS™ extremely low level FET 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information Rev. 01 — 28 September 2004 Product data sheet n Low threshold voltage n Low on-state resistance. n Low power DC-to-DC converters n Battery management n Load switching n Battery powered portable equipment. n VDS ≤ −20 V n ID ≤ −3.9 A n RDSon ≤ 76 mΩ n Qgd = 0.65 nC (typ). Table 1: Discrete pinning Pin Description Simplified outline Symbol 1 gate (g) SOT23 2 source (s) 3 drain (d) SOT23 1 2 3 s d g 003aaa671 Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET 3. Ordering information 4. Limiting values Table 2: Ordering information Type number Package Name Description Version PMV65XP SOT23 Plastic surface mounted package; 3 leads SOT23 Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - −20 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - −20 V VGS gate-source voltage (DC) - ±12 V ID drain current (DC) Tsp = 25 °C; VGS = −4.5 V; Figure 2 and 3 - −3.9 A Tsp = 100 °C; VGS = −4.5 V; Figure 2 - −2.5 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - −15.9 A Ptot total power dissipation Tsp = 25 °C; Figure 1 - 1.92 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C - −1.6 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - −6.4 A 9397 750 13993 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 28 September 2004 2 of 12 Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. Tsp = 25 °C; IDM is single pulse; VGS = −4.5 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa17 0 40 80 120 0 50 100 150 200 Tsp (°C) Pder (%) 03aa25 0 40 80 120 0 50 100 150 200 Tsp (°C) Ider (%) Pder Ptot P tot 25 C°( ) ----------------------- 100%×= Ider ID I D 25 C°( ) ------------------- 100%×= 03ar44 10-2 10-1 1 10 102 10-1 1 10 102 -VDS (V) -ID (A) DC 100 ms 10 ms Limit RDSon = -VDS / -ID 1 ms tp = 10 µs 100 µs 9397 750 13993 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 28 September 2004 3 of 12 Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET 5. Thermal characteristics 5.1 Transient thermal impedance Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point Figure 4 - - 65 K/W Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 03ar45 10-1 1 10 102 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Zth(j-sp) (K/W) single pulse 0.2 0.1 0.05 δ = 0.5 0.02 tp T P t tp Tδ = 9397 750 13993 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 28 September 2004 4 of 12 Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = −250 µA; VGS = 0 V Tj = 25 °C −20 - - V Tj = −55 °C −18 - - V VGS(th) gate-source threshold voltage ID = −1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 °C −0.55 −0.75 −0.95 V Tj = 150 °C −0.35 - - V Tj = −55 °C - - −1.1 V IDSS drain-source leakage current VDS = −20 V; VGS = 0 V Tj = 25 °C - - −1 µA Tj = 150 °C - - −100 µA IGSS gate-source leakage current VGS = ±12 V; VDS = 0 V - −10 −100 nA RDSon drain-source on-state resistance VGS = −4.5 V; ID = −2.8 A; Figure 6 and 8 Tj = 25 °C - 65 76 mΩ Tj = 150 °C - 104 122 mΩ VGS = −2.5 V; ID = −2.3 A; Figure 6 and 8 - 90 112 mΩ Dynamic characteristics Qg(tot) total gate charge ID = −2.8 A; VDS = −6 V; VGS = −4.5 V; Figure 11 - 7.6 - nC Qgs gate-source charge - 1.6 - nC Qgd gate-drain (Miller) charge - 0.65 - nC Vplat plateau voltage - −1.5 - V Ciss input capacitance VGS = 0 V; VDS = −20 V; f = 1 MHz; Figure 13 - 725 - pF Coss output capacitance - 105 - pF Crss reverse transfer capacitance - 80 - pF td(on) turn-on delay time VDS = −6 V; RL = 6 Ω; VGS = −4.5 V; RG = 6 Ω - 7 - ns tr rise time - 21 - ns td(off) turn-off delay time - 68 - ns tf fall time - 33 - ns Source-drain diode VSD source-drain (diode forward) voltage IS = −1.25 A; VGS = 0 V; Figure 12 - −0.77 −1.2 V 9397 750 13993 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 28 September 2004 5 of 12 Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET Tj = 25 °C Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of drain current; typical values. Tj = 25 °C and 150 °C; VDS > ID x RDSon Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03ar46 0 5 10 15 20 0 0.5 1 1.5 2 -VDS (V) -ID (A) -2.5 V -3 V -2 V -3.5 V VGS = -1.4 V -4.5 V -1.6 V -1.8 V 03ar47 0 40 80 120 160 200 0 5 10 15 20 -ID (A) RDSon (mΩ) -4.5 V -3 V -3.5 V VGS = -2.5 V 03ar48 0 5 10 15 20 0 1 2 3 4 -VGS (V) -ID (A) Tj = 150 °C 25 °C 03aq10 0 0.5 1 1.5 2 -60 0 60 120 180 Tj (°C) a a RDSon RDSon 25 C°( ) -----------------------------= 9397 750 13993 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 28 September 2004 6 of 12 Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET ID = −1 mA; VDS = VGS Tj = 25 °C; VDS = −5 V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. ID = −2.8 A; VDS = −6 V Fig 11. Gate-source voltage as a function of gate charge; typical values. 03ar95 0 0.4 0.8 1.2 -60 0 60 120 180 Tj (°C) -VGS(th) (V) max typ min 03ar96 10-6 10-5 10-4 10-3 0 0.2 0.4 0.6 0.8 1 -VGS (V) -ID (A) maxtypmin 03ar51 0 1 2 3 4 5 0 2 4 6 8 10 QG (nC) -VGS (V) 9397 750 13993 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 28 September 2004 7 of 12 Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET Tj = 25 °C and 150 °C; VGS = 0 V VGS = 0 V; f = 1 MHz Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03ar50 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 -VSD (V) -IS (A) Tj = 25 °C150 °C 03ar49 10 102 103 10-1 1 10 102 -VDS (V) C (pF) Ciss Coss Crss 9397 750 13993 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 28 September 2004 8 of 12 Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET 7. Package outline UNIT A1 max. bp c D E e1 HE Lp Q wv REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 IEC JEDEC EIAJ mm 0.1 0.480.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.52.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e1 e A A1 Lp Q detail X HE E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X 1 2 3 Plastic surface mounted package; 3 leads SOT23 9397 750 13993 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 28 September 2004 9 of 12 Fig 14. SOT23 package outline. Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET 8. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PMV65XP_1 20040928 Product data sheet - 9397 750 13993 - 9397 750 13993 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 28 September 2004 10 of 12 Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET 9. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 12. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). 9397 750 13993 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 28 September 2004 11 of 12 Philips Semiconductors PMV65XP P-channel TrenchMOS™ extremely low level FET 14. Contents © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 5.1 Transient thermal impedance . . . . . . . . . . . . . . 4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 Contact information . . . . . . . . . . . . . . . . . . . . 11 not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 September 2004 Document number: 9397 750 13993 Published in The Netherlands 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 5.1 Transient thermal impedance 6. Characteristics 7. Package outline 8. Revision history 9. Data sheet status 10. Definitions 11. Disclaimers 12. Trademarks 13. Contact information 14. Contents