快速热处理对掺锗直拉单晶硅的影响研究（可编辑）

快速热处理对掺锗直拉单晶硅的影响研究（可编辑） 快速热处理对掺锗直拉单晶硅的影响研究 l 室 ktr0『kf;;ll|i―f‘??P ? 论文 政研论文下载论文大学下载论文大学下载关于长拳的论文浙大论文封面下载 作者 签名:盘塑鱼 论文评阅人 1( ?些鱼3型[究旦3逝堑太堂 评阅人2: 翁塞垒93数援3逝江太堂 评阅人3: 篡态拯3蜃』邀援!!乜国立l:量:堂瞳 评阅人4: 评阅人5: 答辩委员会主席: 扬建幺!数援!逝迤太:羔 委员1: !逝江太堂 马囱刚3数援 委员2: 昱勇至3副熬援3逝江太:堂 委员3( 一 进撞适3趸9教拯3逝迤厶堂 委员4: 委员5: 答辩II期: 2Q!Q 鱼:2 PJllll f I I IIIIJIIIIJ11JI I IIIPIPrlIll 1 Y1 浙江大学研究生学位论文独创性声明 本人声明所呈交的学位论文是奉人在导师指导下进jJJ(的研究:l:作及取得的 研究成果。除了文中特别加以标注和致 勇 的地方外，论文中不包含其他人已经发 表或撰写过的研究成果，也不包含为获得逝姿盘鲎或其他教育机构的学位或 证怕而使用过的材料。与我一lr4工作的同志对本研究所做的任何贡献均已在沦文 中作了明确的说明并表示谢意。 学位论文作者签名:爿。席垮 签字同期: "u1『,t 年 ,月7R 学位论文版权使用授权书 本学位论文作者完全了解 逝婆盘鲎 有权保留并向刚家有关部门或机 构送交本论文的复印件和磁盘，允许论文被查阅和借阅。本人授卡义逝婆盘鲎 可以将学位论文的全翔j或部分内窬编入有关数据库进行检索和传播，可以采州影 印、缩印或扫拙等复制手段保存、汇编学位论文。 保密的学位论文在解密后适用本授权书 学f移论文作者签名:-A廊待 导帅签私: 签字同期: 芦，，年‘月7日 签字同期:?Df R 7 本文受 973项目“硅基发光材料与光互连的基础研究’’ 2007CB130403 资助 浙江大学硕士学位论文 致谢 致谢 在本文即将完成之际，我首先要感谢阙端麟院士、杨德仁教授和马向阳教授 的指导和帮助。他们严谨的科研态度，踏实的工作作风，广博的专业涵养，对科 学事业的奉献精神以及宽和诚挚、平易近人的长者风范都一直深深地感动并影响 着我，这将使我终生受益。 我还要特别感谢陈加和师兄，论文的顺利完成离不开加和师兄的具体的指导 加和师兄严谨细致、一丝不苟的学风，孜孜不倦的求知、求真精神，和帮助。 对 工作的热忱、对事业的热爱都是值得我学习的。从课 题 快递公司问题件快递公司问题件货款处理关于圆的周长面积重点题型关于解方程组的题及答案关于南海问题 的选择到论文的最终完成， 加和师兄始终给予我悉心的指导。每当遇到困难，不管他是在国内还是国外，都 会认真的指导帮助我，使我能尽快的解决问题。在此，我谨向加和师兄表达我最 诚挚的感谢和敬意。 感谢皮孝东老师在英文论文写作上给予我的帮助，没有他的辛勤付出，我的 论文就不会这么快的接收。 同时感谢汪雷，李东升，余学功，樊瑞新和欧海英老师在实验、学习和生活 中给予的帮助和支持。 感谢曾俞衡师兄和曾徵丹师姐在实验上给予我的建议和指导;感谢王朋师兄 和陈炳地师兄在我来浙大面试时生活上的帮助;感谢朱伟江、林丽霞、王彪、 张 新鹏和徐吴兵在实验上的帮助;感谢我的室友陈翼、肖云清和朱伟江以及张绪武、 周冰、田野、金璐在生活上的帮助;感谢实验室的师兄、师姐、同学、师弟和师 和他们在一起学习和生活的三年时光虽然短暂但却美好，令我终身难妹们。 忘。 我衷心的祝愿他们前程似锦、平安幸福。 最后，我要感谢我的父母。这么多年来，他们为我的成长费尽了心血，我的 每一次进步都离不开他们的关心和支持。我会努力报答他们的养育之恩。 感谢关心、支持和帮助过我的每一个人! 武鹏 2010年5月于求是园 浙江大学硕士学位论文 摘要 摘要 集成电路特征线宽的不断减小对直拉单晶硅片中的缺陷控制和内吸杂技术 随着磁控拉晶技术的应用，硅中的氧含量越来越低。提出了愈来愈高的要求。 同 时现在的集成电路多应用超浅结，其制造工艺的热预算显著降低，这两方面多不 利用硅片中的氧沉淀的形成，从而使传统的内吸杂工艺受到了挑战。另一方面， 由于单晶硅片直径的变大，集成电路工艺对硅片的机械强度提出了更高的要求。 在这种情况下，掺锗直拉单晶硅由于其优异的性能以及基于快速热处理 RTA 引入大量空位的魔幻洁净区工艺受到越来越多的关注。但到目前为止，快速热处 理对掺锗直拉单晶硅片的影响的研究还很少，对其影响机理尚不清楚。 本文系统的研究了快速热处理对掺锗直拉单晶硅的少子寿命以及氧沉淀行 为的影响。其主要结果如下: 1 研究了快速热处理对微量掺锗直拉单晶硅的少子寿命的影响。研究发现 并随着热处理温度的快速热处理会明显降低掺锗直拉单晶硅中的少子寿命， 上 升，少子寿命快速下降。通过研究发现，这种现象与快速热处理时的光照和高温 热处理是引入的缺陷有关。 2 研究了空位对掺锗直拉单晶硅氧沉淀行为的影响。研究发现，在空位大 锗反而抑制了氧沉淀的形核。我们认为这与GCZ硅片中V-O复合体和锗杂质的 反应有关，通过研究进一步揭示了空位影响掺锗单晶硅中氧沉淀行为的机 理。同 时实验表明相比与低(高两步热处理，线性升温和高温热处理结合产生的氧沉淀 量更多。 3 研究了快速热处理条件对掺锗直拉硅内吸杂的影响。研究表明，在 1200。C以上进行快速热处理时，硅片具有较高的体缺陷密度和一定的洁净区宽 度。在氮气气氛下处理时，由于会向硅片体内注入大量的空位，使得硅片近表面 无洁净区产生，不适用于内吸杂。 4 研究了常规热处理方式和快速热处理方式对重掺锗外延硅片的内吸杂 III 文 浙江大学硕士学位论 摘要 淀延迟效应。当氧沉淀的延迟效应消失后，单步高温快速热处理可以明显促 进氧 沉淀的形成。 关键词:快速热处理，掺锗直拉单晶硅，少子寿命，氧沉淀，内吸杂 IV 浙江大学硕士学位论文 Ab删 Abstract Theever-smallerfeaturesizeof circuit on integratedimposes increasingly onthedefect stringent controlandinternal of requirements wafers(Forthe diameterCZsilicon Czochralski cz silicon larger wafers，the concentrationisreducedtoacertain thermal oxygen for extent(Moreover,the budget the of IC is manufacturingcontemporary featuringsuper-shallowjunction lowered(Thetwo asmentionedabovearenot significantly regards favorablefor oxygen andthereforetheinternal forCZsilicon precipitation geRering IG capability wafersSOthatthetraditionalIG is theother processchallenged(Onhand，the larger diametersilicon CZ wafers on onthemechanical imposesincreasingly requirements the has properties(Undercircumstance，the been germanium―dopedCZ GCZ silicon moreattention goRen duetoitsnovel thesame based properties(Attime，IG process onthe introducedthermal more vacancy byrapid annealing RTA alsogets attentions( Butuntil arefew intheeffectofRTAon now,there theGCZ investigation silicon,and themechanismfortheeffectofvacancieson inGCZsilicon oxygenprecipitation needstobefurtherstudied( Inthis cartier dissertation,theminoritylifetimeandthe oxygenprecipitation behaviorin CZ mechanisms germaniumdopedsilicon(Moreover,thefortheeffectof and on have germaniumvacancyoxygen precipitationreasonablyexploited( effectofRTA ontheIG inGCZsilicon Furthermore，the pretreatmentprocess wafers hasbeen discussed(Listedbelowarethemost resultsachievedinthiswork( important effectofRTAonthe carrierlifetimeinGCZsiliconhas 1 The minority been isfoundthe cartierlifetimeinGCZsilicon investigated(It minority isstrongly reduced RTA with carrier by treatment，and increasingtemperature，theminority lifetimereduced indicatesthatthisreductionisdueto defectsand quickly(This crystal the radializationinducedtheRTA stronglight during step( effectofvacanciesintroduced 2 The RTAonthe in by oxygen precipitation V 文 浙江大学硕士学位论 Abstraet hasbeen isobservedthattheRTA―inducedvacanciesin GCZsilicon investigated(It for most at GCZsiliconenhancedthenucleation oxygenprecipitationsignificantly to850 insiliconisenhancedboththevacancies 750 oC(The by oxygenprecipitation introducedRTA andthe of duringpretreatmentdoping thatthe effectofvacanciesonthe of is fred enhancement precipitationoxygenlarger thanthatof isfoundthat could atoms(Moreover,it germanium oxygenprecipitation beenhancedwhenthe isbetween650and750oCor nucleatingtemperature higher 1050 is whenthe is than suppressednucleating oC(Oxygenprecipitation temperature inthe from850to950oC(We thatthese haverelationtothe range suggest phenomena reactionbetween atomsand mechanismforthe germaniumvacancycomplexes(The is interactionbetweenvacanciesand atomsinCZsiliconelucidated( germanium influencesoftheRTA OiltheIG inGCZsiliconhave 3 The ability pretreatment been isfoundthatthereare ofbulk investigated(It highdensity andthe widthofDZzonewhentheRTA is than1200 appropriate temperaturehigher under vacancies tothewaferbulkfrom oC(WhenRTA N2ambient，the Can竭ected surface(sotheDZzonecouldnotcreatebeneaththesurface( IG forextension 4 The heavy processes waferbasedontheconventionalfurnace thermal anneal CFA andrapid anneal RTA havebeen isfoundthatthe inHGCZsiliconwould developed(It oxygenprecipitation 6hwithRTA be afterthe 8000C,4h+10000C,1 delayed annealing pretreatment(When RTACallenhancethe “delayeffect'’disappears，one-stepoxygenprecipitation the strongly( thermal Czochralski Keywords:Rapidannealing，germaniumdoped silicon,minority carrier lifetime，oxygenprecipitation，internalgettering VI 浙江大学硕士学位论文 目录 目 录 致 谢„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„ „„„„„„„„„一I 摘 要„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„ „„„„„„„„。III Abstract„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„(V 第1章前 言„„„„„„„„„„„„„„„„„„„„„„„„„„„„„1 ?1(1研究背景和意 义„„„„„„„„„„„„„„„„„„„„„„„1 ?1(2本研究的目的和文章的结 构„„„„„„„„„„„„„„„„„一2 第2章文献综 述„„„„„„„„„„„„„„„„„„„„„„„„„„„4 ?2(1引言„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„4 ?2(2硅中的 氧„„„„„„„„„„„„„„„„„„„„„„„„„„(4 2(2(1氧的引入„„„„„„„„„„„„„„„„„„„„„„„(5 2(2(2氧的基本性 质„„„„„„„„„„„„„„„„„„„„„(6 2(2(3氧的测量„„„„„„„„„„„„„„„„„„„„„„„(7 2(2(4氧的扩散„„„„„„„„„„„„„„„„„„„„„„„一8 ?2(3硅中的氧沉淀„„„„„„„„„„„„„„„„„„„„„„„„9 2(3(1氧热施主„„„„„„„„„„„„„„„„„„„„„„„lO 2-3(2氧沉淀的形成„„„„„„„„„„„„„„„„„„„„„„„11 2(3(3氧沉淀形成的影响因素„„„„„„„„„„„„„„„„„„„13 2(3(4氧沉淀的形貌和结构„„„„„„„„„„„„„„„„„„((15 ?2(4硅中的空位„„„„„„„„„„„„„„„„„„„„„„„„17 2(4(1空位的基本性质„„„„„„„„„„„„„„„„„„„„17 2(4(2空位的引入„„„„„„„„„„„„„„„„„„„„„„18 2(4(2空位复合 体„„„„„„„„„„„„„„„„„„„„„„20 2(4(3空位对氧沉淀的影响„„„„„„„„„„„„„„„„„„22 ?2(5掺锗单晶硅„„„„„„„„„„„„„„„„„„„„„„„„23 ?2(6单晶硅的内吸杂技术„„„„„„„„„„„„„„„„„„„„25 2(6(1高(低(高内吸杂工艺„„„„„„„„„„„„„„„„„„„25 2(6(2低(高内吸杂工艺„„„„„„„„„„„„„„„„„„„((27 2(6(3基于ramping处理的内吸杂工艺„„„„„„„„„„„„„27 VII 浙江大学硕士学位论文 目录 2(6(4MDZ内吸杂工 艺„„„„„„„„„„„„„„„„„„„„28 第3章实验设备与样品准 备„„„„„„„„„„„„„„„„„„„„„29 ?3(1热处理设 备„„„„„„„„„„„„„„„„„„„„„„„„(29 3(1(1常规热处理炉„„„„„„„„„„„„„„„„„„„„„„29 3(1(2快速热处理炉„„„„„„„„„„„„„„„„„„„„„。29 ?3(2主要测试 方法 快递客服问题件处理详细方法山木方法pdf计算方法pdf华与华方法下载八字理论方法下载 和测试设 备„„„„„„„„„„„„„„„„„„(30 3(2(1硅中间隙氧浓度的测试和氧沉淀的表征„„„„„„„„„„30 3(2(2体缺陷密度的测 试„„„„„„„„„„„„„„„„„„„31 3(2(3电学性能的测 试„„„„„„„„„„„„„„„„„„„„31 1 ?3(3样品准 备„„„„„„„„„„„„„„„„„„„„„„„„„(3 第4章快速热处理对掺锗直拉单晶硅电学性能的影 响„„„„„„„„„„33 ?4(1引言„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„33 ?4(2实验„„„„„„„„„„„„„„„„„„„„„„„„„„„。34 ?4(3实验结果与讨 论„„„„„„„„„„„„„„„„„„„„„„(34 4(3(1快速热处理温度对少子寿命的影 响„„„„„„„„„„„„34 4(3(2快速热处理时间对少子寿命的影 响„„„„„„„„„„„„35 4(3(3光照对少子寿命的影 响„„„„„„„„„„„„„„„„„36 4(3(4锗杂质对直拉单晶硅中少子寿命的影响„„„„„„„„„„37 ?4(4小结„„„„„„„„„„„„„„„„„„„„„„„„„„„((37 第5章空位对掺锗直拉单晶硅中氧沉淀行为的影 响„„„„„„„„„„„38 ?5(1引言„„„„„„„„„„„„„„„„„„„„„„„„„„„„„。38 ?5(2实 验„„„„„„„„„„„„„„„„„„„„„„„„„„„38 5(2(1研究线性升温及低温形核温度对氧沉淀行为影响的实验 方案 气瓶 现场处置方案 .pdf气瓶 现场处置方案 .doc见习基地管理方案.doc关于群访事件的化解方案建筑工地扬尘治理专项方案下载 „39 5(2(2研究形核时间对氧沉淀行为影响的实验方案„„„„„„„„40 ?5(3实验结果与讨 论„„„„„„„„„„„„„„„„„„„„„„41 5(3(1线性升温对氧沉淀行为的影响„„„„„„„„„„„„„„41 5(3(2低温形核温度对氧沉淀行为的影响„„„„„„„„„„„„45 5(3(3形核时间对氧沉淀行为的影响„„„„„„„„„„„„„„49 5(3(4锗和空位复合体的反 应„„„„„„„„„„„„„„„„„51 VIII 浙江大学硕士学位论文 目录 ?5(4小结„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„53 第6章快速热处理对掺锗直拉单晶硅内吸杂行为的影 响„„„„„„„„„54 ?6(1引 言„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„(54 ?6(2实验„„„„„„„„„„„„„„„„„„„„„„„„„„„54 6(2(1实验样品„„„„„„„„„„„„„„„„„„„„„„„54 6(2(2实验方案„„„„„„„„„„„„„„„„„„„„„„„((55 ?6-3实验结果与讨 论„„„„„„„„„„„„„„„„„„„„„„56 6(3(1快速热处理温度对硅片内吸杂的影 响„„„„„„„„„„„56 6(3(2快速热处理气氛对硅片内吸杂的影 响„„„„„„„„„„„57 6(3(3快速热处理时间对硅片内吸杂的影 响„„„„„„„„„„„59 6(3(4快速热处理降温速率对硅片内吸杂的影响„„„„„„„„„60 ?6(4小结„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„62 第7章不同热处理方式对外延重掺锗样品中内吸杂行为的影响„„„„„„63 ?7(1引言„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„((63 ?7(2实验„„„„„„„„„„„„„„„„„„„„„„„„„„„(63 ?7(3实验结果及讨 论„„„„„„„„„„„„„„„„„„„„„„64 7(3(1不同热处理方式对外延重掺硅片内吸杂行为的影响„„„„„64 7(3(2外延前不同热处理方式对重掺硅片内吸杂行为的影响„„„„67 ?7(4小 结„„„„„„„„„„„„„„„„„„„„„„„„„„„„„。70 第8章全文总 结„„„„„„„„„„„„„„„„„„„„„„„„„„(71 参考文 献„„„„„„„„„„„„„„„„„„„„„„„„„„„„„(73 硕士期间发表的论 文„„„„„„„„„„„„„„„„„„„„„„„„„。81 IX 浙江大学硕士学位论文 摘要 摘要 集成电路特征线宽的不断减小对直拉单晶硅片中的缺陷控制和内吸杂技术 提出了愈来愈高的要求。随着磁控拉晶技术的应用，硅中的氧含量越来越低。同 其制造工艺的热预算显著降低，这两方面时现在的集成电路多应用超浅结， 多不 利用硅片中的氧沉淀的形成，从而使传统的内吸杂工艺受到了挑战。另一方面， 由于单晶硅片直径的变大，集成电路工艺对硅片的机械强度提出了更高的要求。 在这种情况下，掺锗直拉单晶硅由于其优异的性能以及基于快速热处理 RTA 引入大量空位的魔幻洁净区工艺受到越来越多的关注。但到目前为止，快速热处 理对掺锗直拉单晶硅片的影响的研究还很少，对其影响机理尚不清楚。 本文系统的研究了快速热处理对掺锗直拉单晶硅的少子寿命以及氧沉 淀行 为的影响。其主要结果如下: 1 研究了快速热处理对微量掺锗直拉单晶硅的少子寿命的影响。研究发现 快速热处理会明显降低掺锗直拉单晶硅中的少子寿命，并随着热处理温度的上 少子寿命快速下降。通过研究发现，这种现象与快速热处理时的光照和升， 高温 热处理是引入的缺陷有关。 2 研究了空位对掺锗直拉单晶硅氧沉淀行为的影响。研究发现，在空位大 10500C时，锗可以促进硅片中的氧沉淀的生成，当形核温度在8500C(9500C时， 锗反而抑制了氧沉淀的形核。我们认为这与GCZ硅片中V-O复合体和锗杂质的 反应有关，通过研究进一步揭示了空位影响掺锗单晶硅中氧沉淀行为的机 理。同 时实验表明相比与低(高两步热处理，线性升温和高温热处理结合产生的氧沉淀 量更多。 3 研究了快速热处理条件对掺锗直拉硅内吸杂的影响。研究表明，在 12000C以上进行快速热处理时，硅片具有较高的体缺陷密度和一定的洁净区宽 度。在氮气气氛下处理时，由于会向硅片体内注入大量的空位，使得硅片近表面 无洁净区产生，不适用于内吸杂。 4 研究了常规热处理方式和快速热处理方式对重掺锗外延硅片的内吸杂 III 浙江大学硕士学位论文 摘要 淀延迟效应。当氧沉淀的延迟效应消失后，单步高温快速热处理可以明显促 进氧 沉淀的形成。 关键词:快速热处理，掺锗直拉单晶硅，少子寿命，氧沉淀，内吸杂 IV 浙江大学硕士学位论文 Abst棚 Abstract Theever-smallerfeaturesizeof circuit on integratedimposes increasingly onthedefectcontrolandinternal of stringentrequirements wafers(Forthe diameterCZsilicon Czochralski CZ silicon larger wafers，the concentration isreducedtoacertain thermal for oxygen extent(Moreover,the budget the of IC is manufacturingcontemporary featuringsuper-shallowjunction lowered(Thetwo aboveare significantly notfavorablefor regards嬲mentioned andthereforetheintemal forCZsilicon oxygenprecipitation gettering IG capability wafersSOthatthetraditionalIG is theother processchallenged(Onhand，the larger diameter CZsiliconwafers on onthemechanical imposes increasinglyrequirements the haS properties(Undercircumstance，the been germanium-dopedCZ GCZ silicon moreattentionto gotten dueitsnovel thesame based properties(Attime，IG process onthe introducedthermal moreattentions( vacancy byrapid annealing RTA alsogets Butuntil arefew intheeffectofRTAontheGCZ now,there investigation silicon，and themechanism fortheeffectofvacancieson inGCZsilicon oxygenprecipitation needstobefurtherstudied( Inthis carrierlifetimeandthe dissertation,the minority oxygenprecipitation behaviorin CZ mechanismsfortheeffectof germaniumdopedsilicon(Moreover,the and on have germanium vacancyoxygenprecipitationreasonably exploited( effectofRTA onthe Furthermore，the IG inGCZsiliconwafers pretreatment process hasbeendiscussed(Listedbelowarethe most resultsachievedinthiswork( important effectofRTAon the carrierlifetimeinGCZsilicon 1 The minority hasbeen isfoundthe carrier investigated(It minoritylifetimeinGCZsiliconisstrongly reducedRTA with by treatment，and carrier increasingtemperature，the minority lifetimereduced indicatesthatthisreductionisdue to defectsand quickly(This crystal the radializationinducedtheRTA light strong during step( effectofvacanciesintroduced 2 The RTAonthe in by oxygenprecipitation V 浙江大学硕士学位论文 Abstract siliconhas theRTA-induced GCZ been isobservedthat vacanciesin investigated(It GCZsiliconenhancedthenucleationfor most at oxygenprecipitationsignificantly tO850oC(The boththe 750 insiliconisenhanced vacancies oxygenprecipitation by introducedRTA andthe of duringpretreatmentdoping findthattheenhancementeffectofvacanciesonthe of is precipitationoxygenlarger thanthatof isfoundthat could atoms(Moreover,it germanium oxygenprecipitation beenhancedwhenthe isbetween650and750oCor nucleatingtemperature higher than1 the 050。C(Oxygen is whennucleating is precipitationsuppressed temperature inthe from850to950oC(We thatthese haverelationtOthe range suggest phenomena reactionbetween atomsand mechanismforthe germaniumvacancy complexes(The interactionbetweenvacanciesand atomsinCZsiliconiselucidated( germanium influencesoftheRTA ontheIG inGCZsiliconhave 3 The pretreatmentability been isfoundthatthereare ofbulk investigated(It density high andthe widthofDZzonewhentheRTA is than1200 appropriate temperaturehigher oC(WhenRTAunderambiem(thevacanciesCan tothewaferbull【from N2 injected theDZzonecouldnotcreatebeneaththesurface( surface，SO IG forextension 4 Theprocesses heavy waferbasedontheconventionalfurnace thermal anneal CFA andrapid anneal RTA havebeen isfoundthatthe inHGCZsiliconwould developed(It oxygenprecipitation be afterthe 8000C,4h+l000。C,16hwithRTA delayed annealing RTACanenhance the“delay the effect'’disappears，one―step oxygenprecipitation strongly( thermal Czochralski Keywords:Rapidannealing，germaniumdoped silicon， minority carder lifetime，oxygenprecipitation，intemalgettering 浙江大学硕士学位论文 目录 目 录 致 谢„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„一I 摘 要„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„一III Abstract„„„„„„„„„„„„„„„„„„„„„„„„„„„„ „„„„„„„„„„„„(V 第1章前 言„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„(1 ?1(1研究背景和意 义„„„„„„„„„„„„„„„„„„„„„„„„„„„„(1 ?1(2本研究的目的和文章的结 构„„„„„„„„„„„„„„„„„((2 第2章文献综 述„„„„„„„„„„„„„„„„„„„„„„„„„„(4 ?2(1引言„„„„„„„„„„„„„„„„„„„„„„„„„„„„4 ?2(2硅中的氧„„„„„„„„„„„„„„„„„„„„„„„„„„4 2(2(1氧的引入„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„((5 2(2(2氧的基本性质„„„„„„„„„„„„„„„„„„„„„(6 2(2(3氧的测 量„„„„„„„„„„„„„„„„„„„„„„„(7 2(2(4氧的扩散„„„„„„„„„„„„„„„„„„„„„„„„(8 ?2(3硅中的氧沉 淀„„„„„„„„„„„„„„„„„„„„„„„„„„一9 2(3(1氧热施主„„„„„„„„„„„„„„„„„„„„„„„(10 2(3(2氧沉淀的形成„„„„„„„„„„„„„„„„„„„„„l1 2(3(3氧沉淀形成的影响因 素„„„„„„„„„„„„„„„„„„„((13 2(3(4氧沉淀的形貌和结构„„„„„„„„„„„„„„„„„„15 7 ?2(4硅中的空 位„„„„„„„„„„„„„„„„„„„„„„„„l 2(4(1空位的基本性质„„„„„„„„„„„„„„„„„„„„17 2(4(2空位的引入„„„„„„„„„„„„„„„„„„„„„„18 2(4(2空位复合体„„„„„„„„„„„„„„„„„„„„„„(20 2(4(3空位对氧沉淀的影响„„„„„„„„„„„„„„„„„„22 ?2(5掺锗单晶硅„„„„„„„„„„„„„„„„„„„„„„„„23 ?2(6单晶硅的内吸杂技 术„„„„„„„„„„„„„„„„„„„„25 2(6(1高(低(高内吸杂工艺„„„„„„„„„„„„„„„„„„(25 2(6(2低(高内吸杂工 艺„„„„„„„„„„„„„„„„„„„((27 2(6(3基于ramping处理的内吸杂工艺„„„„„„„„„„„„„27 Vll 浙江大学硕士学位论文 目录 2(6(4 MDZ内吸杂工 艺„„„„„„„„„„„„„„„„„„„„28 第3章实验设备与样品准 备„„„„„„„„„„„„„„„„„„„„„29 ?3(1热处理设备„„„„„„„„„„„„„„„„„„„„„„„„(29 3(1(1常规热处理炉„„„„„„„„„„„„„„„„„„„„„29 3(1(2快速热处理 炉„„„„„„„„„„„„„„„„„„„„„„29 ?3(2主要测试方法和测试设备„„„„„„„„„„„„„„„„„„((30 3(2(1硅中间隙氧浓度的测试和氧沉淀的表征„„„„„„„„„„30 3(2(2体缺陷密度的测试„„„„„„„„„„„„„„„„„„„(31 3(2(3电学性能的测试„„„„„„„„„„„„„„„„„„„„31 ?3(3样品准备„„„„„„„„„„„„„„„„„„„„„„„„„„31 第4章快速热处理对掺锗直拉单晶硅电学性能的影 响„„„„„„„„„„33 ?4(1引言„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„(33 ?4(2实验„„„„„„„„„„„„„„„„„„„„„„„„„„„34 ?4-3实验结果与讨 论„„„„„„„„„„„„„„„„„„„„„„(34 4(3(1快速热处理温度对少子寿命的影 响„„„„„„„„„„„„34 4(3(2快速热处理时间对少子寿命的影 响„„„„„„„„„„„„35 4(3(3光照对少子寿命的影 响„„„„„„„„„„„„„„„„„„„„36 4(3(4锗杂质对直拉单晶硅中少子寿命的影响„„„„„„„„„„37 ?4(4小 结„„„„„„„„„„„„„„„„„„„„„„„„„„„一37 第5章空位对掺锗直拉单晶硅中氧沉淀行为的影 响„„„„„„„„„„„38 ?5(1引言„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„38 ?5(2实验„„„„„„„„„„„„„„„„„„„„„„„„„„„38 5(2(1研究线性升温及低温形核温度对氧沉淀行为影响的实验方案„39 5(2(2研究形核时间对氧沉淀行为影响的实验方案„„„„„„„„40 ?5(3实验结果与讨 论„„„„„„„„„„„„„„„„„„„„„„41 5(3(1线性升温对氧沉淀行为的影 响„„„„„„„„„„„„„„41 5(3(2低温形核温度对氧沉淀行为的影 响„„„„„„„„„„„„45 5(3(3形核时间对氧沉淀行为的影 响„„„„„„„„„„„„„„49 5(3(4锗和空位复合体的反 应„„„„„„„„„„„„„„„„„5l VII! 浙江大学硕士学位论文 目录 ?5(4小结„„„„„„„„„„„„„„„„„„„„„„„„„„„。53 第6章快速热处理对掺锗直拉单晶硅内吸杂行为的影 响„„„„„„„„„54 ?6(1引言„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„54 ?6(2实验„„„„„„„„„„„„„„„„„„„„„„„„„„„(54 6(2(1实验样品„„„„„„„„„„„„„„„„„„„„„„„54 6(2(2实验方案„„„„„„„„„„„„„„„„„„„„„„„(55 ?6(3实验结果与讨 论„„„((„„„„„„„„„„„„„„„„„„„56 6(3(1快速热处理温度对硅片内吸杂的影 响„„„„„„„„„„„„(56 6(3(2快速热处理气氛对硅片内吸杂的影响„„„„„„„„„„„(57 6(3(3快速热处理时间对硅片内吸杂的影响„„„„„„„„„„„59 6(3(4快速热处理降温速率对硅片内吸杂的影响„„„„„„„„„60 ?6(4小结„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„62 第7章不同热处理方式对外延重掺锗样品中内吸杂行为的影响„„„„„„63 ?7(1引言„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„。63 ?7(2实验„„„„„„„„„„„„„„„„„„„„„„„„„„„。63 ?7(3实验结果及讨 论„„„„„„„„„„„„„„„„„„„„„„(64 7(3(1不同热处理方式对外延重掺硅片内吸杂行为的影响„„„„„64 7(3(2外延前不同热处理方式对重掺硅片内吸杂行为的影响„„„„67 ?7(4小结„„„„„„„„„„„„„„„„„„„„„„„„„„„„„(70 第8章全文总 结„„„„„„„„„„„„„„„„„„„„„„„„„„71 参考文 献„„„„„„„„„„„„„„„„„„„„„„„„„„„„„„73 硕士期间发表的论 文„„„„„„„„„„„„„„„„„„„„„„„„((8l IX 浙江大学硕士学位论文 第一章前言 第1章前言 ?1(1研究背景和意义 进入21世纪以来，全球信息化程度迅速提高，以集成电路工业为基础的微 电子产业在全球经济中的战略地位不断的上升，已经成为世界第一产业。半导体 硅材料是微电子产业的基础材料，世界上绝大多数的半导体器件都是在硅片的基 础上制成的。集成电路目前正朝着“更快、更好、更便宜”的方向发展，在 技术 特征上表现为“器件特征线宽更小，硅片直径更大’’。目前45nm特征线宽的甚 大规模集成电路 ULSI 已经在电子工业上比较广泛的应用，32nm的线宽技术已 相信在不久的将来将应用于集成电路的制造。同时，随着单经取得了突破， 品硅 生长技术的发展，硅片的直径不断增加，目前常用的硅片直径为8英寸，12英 寸的硅片已经在一些集成电路代工厂使用。集成电路现在正处于从深亚微米尺度 向纳米尺度过渡的发展阶段，对作为集成电路基础的硅单晶材料提出了新的挑 战，使得直拉硅单晶正朝着“高完整性、高均匀性、大直径”的方向发展。 随着直拉硅单晶不断朝着大直径的方向发展，硅中氧的作用越来越被人们所 重视。氧是直拉单晶硅中最重要的非故意引入的杂质，通常以间隙态的形式存在 于硅的晶格中，在硅的熔点温度，氧的固溶度为2(75x1018cmo，在原生的直拉硅 单晶中氧浓度高达5x1017―2xlO”cmo，远高于氧在器件热处理温度下的固溶度。 在硅锭的冷却过程中，在过饱和度的驱动下，氧原子会聚集形成热施主和原生氧 沉淀。并在后续的集成电路制造的热处理过程中进一步长大。此外，氧原子还会 与杂质和微缺陷结合形成各种新的复合体缺陷，影响的氧沉淀的行为f11。氧沉淀 是直拉单晶硅中最重要的微缺陷，对单晶硅的性能及集成电路的成品率有着很重 要的影响。氧对直拉硅片性能的影响既有有利的一面又有不利的一面:一方面， 氧沉淀可以增大硅片的机械强度从而抑制硅片在热处理过程中的塑性形变 【2】，同 时氧沉淀及其诱生的二次缺陷可以有效地吸除工艺过程中不可避免的金属沾污 【341;另一方面，过量的氧沉淀及其诱生缺陷又会引起硅片的翘曲【514所以，控制 因此，研究硅中的点缺陷和杂质，以及直拉硅片中的氧沉淀是非常重要的。 热处 理温度和热处理步骤对氧沉淀的形核、生长的影响，对于阐明氧沉淀的机理和提 渐江大学硕士学位论文 第一章前言 高器件的成品率有非常重要的意义。 对于集成电路而言，硅片表面约10m宽的区域为器件的活性区，要求该区 为了达到这个目的，目前在集成电路域性质均匀并且没有金属杂质和缺陷。 工艺 中广泛采用吸杂技术。吸杂技术分为内吸杂【61和外吸杂【71。近来，MEMC成功的 将RTA应用于硅片的“内吸杂”工艺，在硅片表面的器件有源区形成无缺陷的洁 净区 DZ ，而在体内形成合理的缺陷密集区，具有很强的内吸杂 IG 能力， 这就是所谓的“魔幻洁净区” MDZ 硅片。随着快速热处理 RTA 在集成电路 工艺中的应用，快速热处理对硅中杂质和缺陷行为的影响已成为研究的焦点， RTA引入的空位对普通和掺锗直拉硅 轻掺 中氧沉淀行为影响的有效温度区间 是一个值得研究的课题。对于普通和掺锗直拉硅来说，RTA引入的空位参与了低 温处理阶段氧沉淀核心的形成，空位浓度越高，核心密度也越高，从而导致高温 处理阶段的氧沉淀量也越显著;在高温处理时间不太长的情况下，样品经过两步 退火后的氧沉淀量与RTA处理温度 亦即空位浓度 呈正相关的关系【8】(另外， 在直拉硅中掺锗也被证明是增强氧沉淀的有效途径【9】。当到目前为止，RTA对掺 锗直拉单晶硅的氧沉淀的影响还不是十分的清楚。 ?1(2本研究的目的和文章的结构 本论文通过少子寿命测量仪、傅里叶红外吸收光谱仪、择优腐蚀结合光学显 微镜和扫描红外显微镜的手段研究了快速热处理 RTA 对掺锗直拉单晶硅的影 响。对快速热处理对GCZ硅片中的氧沉淀行为的影响进行了充分的研究，并初 步研究了RTA条件对GCZ硅片的内吸