BSN20-7;中文规格书,Datasheet资料

BSN20Documentnumber:DS31898Rev.6-21of6www.diodes.comJuly2011©DiodesIncorporatedBSN20NEWPRODUCTN-CHANNELENHANCEMENTMODEFIELDMOSFETProductSummaryV(BR)DSSRDS(ON)IDTA=25°C50V1.8Ω@VGS=10V500mA2.0Ω@VGS=4.5V450mADescriptionandApplicationsThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications.•Backlighting•DC-DCConverters•PowermanagementfunctionsFeaturesandBenefits•LowOn-Resistance•LowInputCapacitance•FastSwitchingSpeed•LowInput/OutputLeakage•LeadFreeByDesign/RoHSCompliant(Note1)•"Green"Device(Note2)•QualifiedtoAEC-Q101StandardsforHighReliabilityMechanicalData•Case:SOT23•CaseMaterial:MoldedPlastic“Green”MoldingCompound.ULFlammabilityClassificationRating94V-0•MoistureSensitivity:Level1perJ-STD-020•Terminals:MatteTinFinishannealedoverAlloy42leadframe(LeadFreePlating).SolderableperMIL-STD-202,Method208•TerminalConnections:SeeDiagram•Weight:0.008grams(approximate)OrderingInformation(Note3)PartNumberCasePackagingBSN20-7SOT233000/Tape&ReelNotes:1.Nopurposefullyaddedlead.2.DiodesInc.’s“Green”policycanbefoundonourwebsiteathttp://www.diodes.com.3.Forpackagingdetails,gotoourwebsiteathttp://www.diodes.comMarkingInformationDateCodeKeyYear2009201020112012201320142015CodeWXYZABCMonthJanFebMarAprMayJunJulAugSepOctNovDecCode123456789ONDSOT23TopViewEquivalentCircuitTopViewSourceGateDrainDGSN20=ProductTypeMarkingCodeYM=DateCodeMarkingY=Year(ex:W=2009)M=Month(ex:9=September)N20YWhttp://oneic.com/BSN20Documentnumber:DS31898Rev.6-22of6www.diodes.comJuly2011©DiodesIncorporatedBSN20NEWPRODUCTMaximumRatingsCharacteristicSymbolValueUnitsDrain-SourceVoltageVDSS50VGate-SourceVoltageVGSS±20VContinuousDrainCurrent@TSP=25°C(Note4)SteadyStateTA=25°CTA=100°CID500300mAPulsedDrainCurrent@TSP=25°C(Notes4&5)IDM1.2AThermalCharacteristicsCharacteristicSymbolValueUnitsPowerDissipation,@TA=25°C(Note4)PD600mWThermalResistance,JunctiontoAmbient@TA=25°C(Note4)RθJA200°C/WPowerDissipation,@TSP=25°C(Note4)PD920mWThermalResistance,@TSP=25°C(Note4)RθJSP136°C/WOperatingandStorageTemperatureRangeTJ,TSTG-55to+150°C.ElectricalCharacteristics@TA=25°CunlessotherwisespecifiedCharacteristicSymbolMinTypMaxUnitTestConditionOFFCHARACTERISTICS(Note6)Drain-SourceBreakdownVoltageBVDSS50--VVGS=0V,ID=250μAZeroGateVoltageDrainCurrentTJ=25°CIDSS--0.5µAVDS=50V,VGS=0VGate-BodyLeakageIGSS--±100nAVGS=±20V,VDS=0VONCHARACTERISTICS(Note6)GateThresholdVoltageVGS(th)0.41.01.5VVDS=VGS,ID=250μAStaticDrain-SourceOn-ResistanceRDS(ON)-1.31.61.82.0ΩVGS=10V,ID=0.22AVGS=4.5V,ID=0.1AForwardTransferAdmittance|Yfs|40320-mSVDS=10V,ID=0.1ADiodeForwardVoltageVSD-1.01.5VVGS=0V,IS=180mASource(diodeforward)CurrentIS--194mATSP=25°CPeakSource(diodeforward)CurrentISM--1.2ATSP=25°C(Notes3&4)DYNAMICCHARACTERISTICS(Note7)InputCapacitanceCiss-21.840pFVDS=10V,VGS=0V,f=1.0MHzOutputCapacitanceCoss-5.615pFReverseTransferCapacitanceCrss-3.310pFGateResistanceRg-49-ΩVDS=0V,VGS=0V,f=1MHzTotalGateChargeQg-800-pCVGS=10V,VDD=25V,ID=250mAGate-SourceChargeQgs-100-pCGate-DrainChargeQgd-100-pCTurn-OnDelayTimetD(on)-2.93-nsVDD=30V,VGEN=10V,RL=150Ω,RGEN=50Ω,ID=0.2ATurn-OnRiseTimetr-2.99-nsTurn-OffDelayTimetD(off)-9.45-nsTurn-OffFallTimetf-8.3-nsNotes:4.DevicemountedonFR-4PCB,withminimumrecommendedpadlayout.5.Repetitiverating,pulsewidthlimitedbyjunctiontemperature.6.Shortdurationpulsetestusedtominimizeself-heatingeffect.7.Guaranteedbydesign.Notsubjecttoproductiontesting.http://oneic.com/BSN20Documentnumber:DS31898Rev.6-23of6www.diodes.comJuly2011©DiodesIncorporatedBSN20NEWPRODUCTFig1.NormalizedTotalPowerDissipationasaFunctionofSolderPointTemperature020406080100120255075100125150175T,SOLDERPOINTTEMPERATURE(°C)SP,POWERDISSIPATION(%)D020406080100120I,NORMALIZEDCONTINUOUSCURRENT(%)DERFig2.NormalizedContinuousCurrentvs.SolderPointTemperature05075100125150175T,SOLDERPOINTTEMPERATURE(°C)S25Fig.3SOA,SafeOperationArea0.1110100V,DRAIN-SOUREVOLTAGE(V)DSRds(on)LimitedI,DRAINCURRENT(A)D0.0010.010.11T=150°CT=25°CSinglePulseJ(MAX)AP=10sWP=DCWP=1sWP=100msWP=10msWP=1msWP=100µsWP=10µsWZ,TRANSIENTTHERMALRESISTANCE(°C/W)th(j-sp)1101001,0000.000010.00010.0010.010.1110Fig.4TransientThermalResponset,PULSEDURATIONTIME(s)1D=0.5D=0.3D=0.1D=0.05D=0.02D=SinglePulseDutyCycle,D=t/t12http://oneic.com/BSN20Documentnumber:DS31898Rev.6-24of6www.diodes.comJuly2011©DiodesIncorporatedBSN20NEWPRODUCT0.10.20.30.40.50.60.700.20.40.60.81.01.21.41.61.82.00V,DRAIN-SOURCEVOLTAGE(V)Fig.5Drain-SourceCurrentvs.Drain-SourceVoltageDSI,DRAIN-SOURCECURRENT(A)DV=3.0VGSV=4.0VGSV=4.5VGSV=10VGS00.10.20.30.40.50.60.70.800.511.522.533.54V,GATE-SOURCEVOLTAGE(V)Fig.6TransferCharacteristicsGSI,DRAIN-SOURCECURRENT(A)D150C°25C°V=5VDS01234567891000.10.20.30.40.50.60.7I,DRAIN-CURRENT(A)Fig.7Drain-SourceOn-Resistancevs.Drain-CurrentDR,DRAIN-SOURCEON-RESISTANCE()DS(ON)ΩV=4.5VGSV=VGS10V=.5VGS3V=4.VGS000.51.01.52.02.5-50-250255075100125150T,JUNCTIONTEMPERATURE(°C)Fig.8Drain-SourceOn-Resistancevs.JunctionTemperatureJR,DRAIN-SOURCEON-RESISTANCE()DS(ON)ΩV=4.5VGSV=10VGSI=AD200mI=500ADm00.40.81.21.62.02.4-50-250255075100125150T,JUNCTIONTEMPERATURE(°C)Fig.9GateThresholdVoltagevs.JunctionTemperatureJV,GATETHRESHOLDVOLTAGE(V)GS(TH)I=1.0mADI=AD250µ00.511.522.533.54V,GATE-SOURCEVOLTAGE(V)Fig.10TransferCharacteristicsGS00.10.20.30.40.5I,DRAIN-SOURCECURRENT(A)D-55C°150C°25C°125C°85C°http://oneic.com/BSN20Documentnumber:DS31898Rev.6-25of6www.diodes.comJuly2011©DiodesIncorporatedBSN20NEWPRODUCTFig.11TypicalTransferCharacteristic00.10.20.30.40.50.60.70.800.10.20.30.40.50.60.70.8I,DRAIN-CURRENT(A)Dg,FORWARDTRANSCONDUCTANCE(s)fs25C°150C°05101520253035400510152025303540V,DRAIN-SOURCEVOLTAGE(V)Fig.12Capacitancevs.Drain-SourceVoltageDSC,CAPACITANCE(pF)CrssCossCissFig.13SourceCurrentvs.DiodeForwardVoltage00.10.20.30.40.50.60.70.80.91.000.20.40.60.81.01.21.4V,DIODEFORWARDVOLTAGE(V)SDI,SOURCECURRENT(A)S25C°150C°PackageOutlineDimensionsSOT23DimMinMaxTypA0.370.510.40B1.201.401.30C2.302.502.40D0.891.030.915F0.450.600.535G1.782.051.83H2.803.002.90J0.0130.100.05K0.9031.101.00K1--0.400L0.450.610.55M0.0850.180.11α0°8°-AllDimensionsinmmAMJLDFBCHKGK1http://oneic.com/BSN20Documentnumber:DS31898Rev.6-26of6www.diodes.comJuly2011©DiodesIncorporatedBSN20NEWPRODUCTSuggestedPadLayoutIMPORTANTNOTICEDIODESINCORPORATEDMAKESNOWARRANTYOFANYKIND,EXPRESSORIMPLIED,WITHREGARDSTOTHISDOCUMENT,INCLUDING,BUTNOTLIMITEDTO,THEIMPLIEDWARRANTIESOFMERCHANTABILITYANDFITNESSFORAPARTICULARPURPOSE(ANDTHEIREQUIVALENTSUNDERTHELAWSOFANYJURISDICTION).DiodesIncorporatedanditssubsidiariesreservetherighttomakemodifications,enhancements,improvements,correctionsorotherchangeswithoutfurthernoticetothisdocumentandanyproductdescribedherein.DiodesIncorporateddoesnotassumeanyliabilityarisingoutoftheapplicationoruseofthisdocumentoranyproductdescribedherein;neitherdoesDiodesIncorporatedconveyanylicenseunderitspatentortrademarkrights,northerightsofothers.AnyCustomeroruserofthisdocumentorproductsdescribedhereininsuchapplicationsshallassumeallrisksofsuchuseandwillagreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonDiodesIncorporatedwebsite,harmlessagainstalldamages.DiodesIncorporateddoesnotwarrantoracceptanyliabilitywhatsoeverinrespectofanyproductspurchasedthroughunauthorizedsaleschannel.ShouldCustomerspurchaseoruseDiodesIncorporatedproductsforanyunintendedorunauthorizedapplication,CustomersshallindemnifyandholdDiodesIncorporatedanditsrepresentativesharmlessagainstallclaims,damages,expenses,andattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizedapplication.ProductsdescribedhereinmaybecoveredbyoneormoreUnitedStates,internationalorforeignpatentspending.ProductnamesandmarkingsnotedhereinmayalsobecoveredbyoneormoreUnitedStates,internationalorforeigntrademarks.LIFESUPPORTDiodesIncorporatedproductsarespecificallynotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpresswrittenapprovaloftheChiefExecutiveOfficerofDiodesIncorporated.Asusedherein:A.Lifesupportdevicesorsystemsaredevicesorsystemswhich:1.areintendedtoimplantintothebody,or2.supportorsustainlifeandwhosefailuretoperformwhenproperlyusedinaccordancewithinstructionsforuseprovidedinthelabelingcanbereasonablyexpectedtoresultinsignificantinjurytotheuser.B.Acriticalcomponentisanycomponentinalifesupportdeviceorsystemwhosefailuretoperformcanbereasonablyexpectedtocausethefailureofthelifesupportdeviceortoaffectitssafetyoreffectiveness.Customersrepresentthattheyhaveallnecessaryexpertiseinthesafetyandregulatoryramificationsoftheirlifesupportdevicesorsystems,andacknowledgeandagreethattheyaresolelyresponsibleforalllegal,regulatoryandsafety-relatedrequirementsconcerningtheirproductsandanyuseofDiodesIncorporatedproductsinsuchsafety-critical,lifesupportdevicesorsystems,notwithstandinganydevices-orsystems-relatedinformationorsupportthatmaybeprovidedbyDiodesIncorporated.Further,CustomersmustfullyindemnifyDiodesIncorporatedanditsrepresentativesagainstanydamagesarisingoutoftheuseofDiodesIncorporatedproductsinsuchsafety-critical,lifesupportdevicesorsystems.Copyright©2011,DiodesIncorporatedwww.diodes.comDimensionsValue(inmm)Z2.9X0.8Y0.9C2.0E1.35XEYCZhttp://oneic.com/分销商库存信息:DIODESBSN20-7